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Register a new userGiant Enhancement of Solid Solubility in Monolayer BNC Alloys by Selective Orbital Coupling
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Solid solubility (SS) is one of the most important features of alloys, which is usually difficult to be largely tuned in the entire alloy concentrations by external approaches. Some alloys that were supposed to have promising physical properties could turn out to be much less useful because of their poor SS, e.g., the case for monolayer BNC [(BN)1-x(C2)x] alloys. Until now, an effective approach on significantly enhancing SS of (BN)1-x(C2)x in the entire x is still lacking. In this article, a novel mechanism of selective orbital coupling between high energy wrong-bond states and surface states mediated by the specific substrate has been proposed to stabilize the wrong-bonds and in turn significantly enhance the SS of (BN)1-x(C2)x alloys. Surprisingly, we demonstrate that five ordered alloys, exhibiting variable direct quasi-particle bandgaps from 1.35 to 3.99 eV, can spontaneously be formed at different x when (BN)1-x(C2)x is grown on hcp-phase Cr. Interestingly, the optical transitions around the band edges in these ordered alloys, accompanied by largely tunable exciton binding energies of ~1 eV at different x, are significantly strong due to their unique band structures. Importantly, the disordered (BN)1-x(C2)x alloys, exhibiting fully tunable bandgaps from 0 to ~6 eV in the entire x, can be formed on Cr substrate at the miscibility temperature of ~1200 K, which is greatly reduced compared to that of 4500~5600 K in free-standing form or on other substrates. Our discovery not only may resolve the long-standing SS problem of BNC alloys, but also could significantly extend the applications of BNC alloys for various optoelectronic applications.
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Magnetic tunnel junctions with perpendicular anisotropy form the basis of the spin-transfer torque magnetic random-access memory (STT-MRAM), which is non-volatile, fast, dense, and has quasi-infinite write endurance and low power consumption. Based on density functional theory (DFT) calculations, we propose an alternative design of magnetic tunnel junctions comprising Fe(n)Co(m)Fe(n)/MgO storage layers with greatly enhanced perpendicular magnetic anisotropy (PMA) up to several mJ/m2, leveraging the interfacial perpendicular anisotropy of Fe/MgO along with a stress-induced bulk PMA discovered within bcc Co. This giant enhancement dominates the demagnetizing energy when increasing the film thickness. The tunneling magnetoresistance (TMR) estimated from the Julliere model is comparable with that of the pure Fe/MgO case. We discuss the advantages and pitfalls of a real-life fabrication of the structure and propose the Fe(3ML)Co(4ML)Fe(3ML) as a storage layer for MgO-based STT-MRAM cells. The large PMA in strained bcc Co is explained in the framework of Brunos model by the MgO-imposed strain and consequent changes in the energies of dyz and dz2 minority-spin bands.
The Rashba effect is one of the most striking manifestations of spin-orbit coupling in solids, and provides a cornerstone for the burgeoning field of semiconductor spintronics. It is typically assumed to manifest as a momentum-dependent splitting of a single initially spin-degenerate band into two branches with opposite spin polarisation. Here, combining polarisation-dependent and resonant angle-resolved photoemission measurements with density-functional theory calculations, we show that the two spin-split branches of the model giant Rashba system BiTeI additionally develop disparate orbital textures, each of which is coupled to a distinct spin configuration. This necessitates a re-interpretation of spin splitting in Rashba-like systems, and opens new possibilities for controlling spin polarisation through the orbital sector.
We report electrical characterization of monolayer molybdenum disulfide (MoS2) devices using a thin layer of polymer electrolyte consisting of poly(ethylene oxide) (PEO) and lithium perchlorate (LiClO4) as both a contact-barrier reducer and channel mobility booster. We find that bare MoS2 devices (without polymer electrolyte) fabricated on Si/SiO2 have low channel mobility and large contact resistance, both of which severely limit the field-effect mobility of the devices. A thin layer of PEO/ LiClO4 deposited on top of the devices not only substantially reduces the contact resistance but also boost the channel mobility, leading up to three-orders-of-magnitude enhancement of the field-effect mobility of the device. When the polymer electrolyte is used as a gate medium, the MoS2 field-effect transistors exhibit excellent device characteristics such as a near ideal subthreshold swing and an on/off ratio of 106 as a result of the strong gate-channel coupling.
We propose that the hybridization between two sets of Rashba bands can lead to an unconventional topology where the two Fermi circles from different bands own in-plane helical spin textures with the same chiralities, and possess group velocities with the same directions. Under the weak spin injection, the two Fermi circles both give the positive contributions to the spin-to-charge conversion and thus induce the giant inverse Rashba-Edelstein Effect with large conversion efficiency, which is very different from the conventional Rashba-Edelstein Effect. More importantly, through the first-principles calculations, we predict that monolayer OsBi2 could be a good candidate to realize the giant inverse Rashba-Edelstein Effect. Our studies not only demonstrate a new mechanism to achieve highly efficient spin-to-charge conversion in spintronics, but also provide a promising material to realize it.
Vapor transportation is the core process in growing transition-metal dichalcogenides (TMDCs) by chemical vapor deposition (CVD). One inevitable problem is the spatial inhomogeneity of the vapors. The non-stoichiometric supply of transition-metal precursors and chalcogen leads to poor control in products location, morphology, crystallinity, uniformity and batch to batch reproducibility. While vapor-liquid-solid (VLS) growth involves molten precursors at the growth temperatures higher than their melting points. The liquid sodium molybdate can precipitate solid MoS2 monolayers when saturated with sulfur vapor. Taking advantage of the VLS growth, we achieved three kinds of important achievements: (a) 4-inch-wafer-scale uniform growth of MoS2 flakes on SiO2/Si substrates, (b) 2-inch-wafer-scale growth of continuous MoS2 film with a grain size exceeding 100 um on sapphire substrates, and (c) pattern (site-controlled) growth of MoS2 flakes and film. We clarified that the VLS growth thus pave the new way for the high-efficient, scalable synthesis of two-dimensional TMDC monolayers.
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