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Register a new userProximity effects in Graphene and Ferromagnetic CrBr3 van der Waals Heterostructure
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We report on first-principle calculations on magnetic proximity effect in a van der Waals heterostructure formed by a graphene monolayer induced by its interaction with a two-dimensional (2D) ferromagnet (chromium tribromide, CrBr3). We observe that the magnetic proximity effect arising from the spin-dependent interlayer coupling depends sensitively on the interlayer electronic configuration. The proximity effect results in spin polarization of graphene orbital by up to 63.6 %, together with a miniband splitting band gap of about 73.4 meV and 8% enhancement in magnetic moment (3.47${mu}$B/cell) in heterostructure. The position of the Fermi level in the Dirac cone is shown to depend strongly on the graphene-CrBr3 interlayer separation of 3.77 Angstrom. Consequently, we also show that a perpendicular electric field can be used to control the miniband spin splitting and transmission spectrum. Also, the interfacial polarization effect due to the existence of two different constituents reinforces the conductivity via electrostatic screening in the heterolayer. These findings point toward potential nanoscale devices where the electric field driven magnetic proximity effect can lead to unique spin controllability and possible engineering of spin gating.
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Two-dimensional (2D) van der Waals heterostructures serve as a promising platform to exploit various physical phenomena in a diverse range of novel spintronic device applications. The efficient spin injection is the prerequisite for these devices. The recent discovery of magnetic 2D materials leads to the possibility of fully 2D van der Waals spintronics devices by implementing spin injection through magnetic proximity effect (MPE). Here, we report the investigation of magnetic proximity effect in 2D CrBr3/graphene van der Waals heterostructures, which is probed by Zeeman spin Hall effect through non-local measurements. Zeeman splitting field estimation demonstrates a significant magnetic proximity exchange field even in a low magnetic field. Furthermore, the observed anomalous longitudinal resistance changes at the Dirac point R_(XX,D)with increasing magnetic field at { u} = 0 may attribute to the MPE induced new ground state phases. This MPE revealed in our CrBr3/graphene van der Waals heterostructures therefore provides a solid physics basis and key functionality for next generation 2D spin logic and memory devices.
Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of crystalline epi-layers each down to a few nanometers thick, the intriguing limit would be heterto-atomic-layer structures. Here we report the first experimental demonstration of freestanding van der Waals heterostructures and their functional nanomechanical devices. By stacking single-layer (1L) MoS2 on top of suspended single-, bi-, tri- and four-layer (1L to 4L) graphene sheets, we realize array of MoS2-graphene heterostructures with varying thickness and size. These heterostructures all exhibit robust nanomechanical resonances in the very high frequency (VHF) band (up to ~100 MHz). We observe that fundamental-mode resonance frequencies of the heterostructure devices fall between the values of graphene and MoS2 devices. Quality (Q) factors of heterostructure resonators are lower than those of graphene but comparable to those of MoS2 devices, suggesting interface damping related to interlayer interactions in the van der Waals heterostructures. This study validates suspended atomic layer heterostructures as an effective device platform and opens opportunities for exploiting mechanically coupled effects and interlayer interactions in such devices.
When two superconductors are connected across a ferromagnet, the spin configuration of the transferred Cooper pairs can be modulated due to magnetic exchange interaction. The resulting supercurrent can reverse its sign across the Josephson junction (JJ) [1-4]. Here we demonstrate Josephson phase modulation in van der Waals heterostructures when Cooper pairs from superconducting NbSe$_2$ tunnel through atomically thin magnetic insulator (MI) Cr$_2$Ge$_2$Te$_6$. Employing a superconducting quantum interference device based on MI JJs, we probe a doubly degenerate non-trivial JJ phase ($phi$) originating from the magnetic barrier. This $phi$-phase JJ is formed by momentum conserving tunneling of Ising Cooper pairs [5] across magnetic domains in the Cr$_2$Ge$_2$Te$_6$ barrier. The doubly degenerate ground states in MI JJs provide a two-level quantum system that can be utilized as a new disipationless component for superconducting quantum devices, including phase batteries [6], memories [7,8], and quantum Ratchets [9,10].
The designer approach has become a new paradigm in accessing novel quantum phases of matter. Moreover, the realization of exotic states such as topological insulators, superconductors and quantum spin liquids often poses challenging or even contradictory demands for any single material. For example, it is presently unclear if topological superconductivity, which has been suggested as a key ingredient for topological quantum computing, exists at all in any naturally occurring material . This problem can be circumvented by using designer heterostructures combining different materials, where the desired physics emerges from the engineered interactions between the different components. Here, we employ the designer approach to demonstrate two major breakthroughs - the fabrication of van der Waals (vdW) heterostructures combining 2D ferromagnetism with superconductivity and the observation of 2D topological superconductivity. We use molecular-beam epitaxy (MBE) to grow two-dimensional islands of ferromagnetic chromium tribromide (CrBr$_3$) on superconducting niobium diselenide (NbSe$_2$) and show the signatures of one-dimensional Majorana edge modes using low-temperature scanning tunneling microscopy (STM) and spectroscopy (STS). The fabricated two-dimensional vdW heterostructure provides a high-quality controllable platform that can be integrated in device structures harnessing topological superconductivity. Finally, layered heterostructures can be readily accessed by a large variety of external stimuli potentially allowing external control of 2D topological superconductivity through electrical, mechanical, chemical, or optical means.
Superconductor-ferromagnet (S-F) interfaces in two-dimensional (2D) heterostructures present a unique opportunity to study the interplay between superconductivity and ferromagnetism. The realization of such nanoscale heterostructures in van der Waals (vdW) crystals remains largely unexplored due to the challenge of making an atomically-sharp interface from their layered structures. Here, we build a vdW ferromagnetic Josephson junction (JJ) by inserting a few-layer ferromagnetic insulator Cr2Ge2Te6 into two layers of superconductor NbSe2. Owing to the remanent magnetic moment of the barrier, the critical current and the corresponding junction resistance exhibit a hysteretic and oscillatory behavior against in-plane magnetic fields, manifesting itself as a strong Josephson coupling state. Through the control of this hysteresis, we can effectively trace the magnetic properties of atomic Cr2Ge2Te6 in response to the external magnetic field. Also, we observe a central minimum of critical current in some thick JJ devices, evidencing the coexistence of 0 and {pi} phase coupling in the junction region. Our study paves the way to exploring the sensitive probes of weak magnetism and multifunctional building blocks for phase-related superconducting circuits with the use of vdW heterostructures.
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