Phosphorene, a single layer of black phosphorous (BLK-P), has a significant potential for flexible and tunable electronics, but attempts to grow it epitaxially have been unsuccessful to date. Meanwhile, hexagonal blue phoshorous (BL-P) has been achieved on closed-packed (111) metal surfaces in special growth conditions of high vapor pressure and high reactivity of phosphorous. The (111) surfaces favors BL-P over BLK-P due to its hexagonal symmetry. Here, we investigate computationally the alternative offered by stepped substrates. Using the Cu(311) surface as a model, we find that surface steps can favor energetically BLK-P over BL-P. This can be rationalized in terms of surface density of states and orbital hybridization, which lead to a stronger surface bonding of the lower BLK-P half-layer. This work suggests that vicinal metal surfaces of metals can offer a viable path towards phosphorene synthesis.
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