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Register a new userTracking the ultrafast motion of an antiferromagnetic order parameter
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Added by
Christian Tzschaschel
Publication date
2019
fields
Physics
and research's language is
English
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The unique functionalities of antiferromagnets offer promising routes to advance information technology. Their compensated magnetic order leads to spin resonances in the THz-regime, which suggest the possibility to coherently control antiferromagnetic (AFM) devices orders of magnitude faster than traditional electronics. However, the required time resolution, complex sublattice interations and the relative inaccessibility of the AFM order parameter pose serious challenges to studying AFM spin dynamics. Here, we reveal the temporal evolution of an AFM order parameter directly in the time domain. We modulate the AFM order in hexagonal YMnO$_mathrm{3}$ by coherent magnon excitation and track the ensuing motion of the AFM order parameter using time-resolved optical second-harmonic generation (SHG). The dynamic symmetry reduction by the moving order parameter allows us to separate electron dynamics from spin dynamics. As transient symmetry reductions are common to coherent excitations, we have a general tool for tracking the ultrafast motion of an AFM order parameter.
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Understanding of the interaction of antiferromagnetic solitons including domain walls and skyrmions with boundaries of chiral antiferromagnetic slabs is important for the design of prospective antiferromagnetic spintronic devices. Here, we derive the transition from spin lattice to micromagnetic nonlinear $sigma$-model with the corresponding boundary conditions for a chiral cubic G-type antiferromagnet and analyze the impact of the slab boundaries and antisymmetric exchange (Dzyaloshinskii--Moriya interaction) on the vector order parameter. We apply this model to evaluate modifications of antiferromagnetic domain walls and skyrmions upon interaction with boundaries for different strengths of the antisymmetric exchange. Due to the presence of the antisymmetric exchange, both types of antiferromagnetic solitons become broader when approaching the boundary and transform to a mixed Bloch--N{e}el structure. Both textures feel the boundary at the distance of about 5 magnetic lengths. In this respect, our model provides design rules for antiferromagnetic racetracks, which can support bulk-like properties of solitons.
The magnetic properties of the first odd-member antiferromagnetic ring comprising eight chromium(III) ions, S=3/2 spins, and one nickel(II) ion, S=1 spin, are investigated. The ring possesses an even number of unpaired electrons and a S=0 ground state but, due to competing AF interactions, the first excited spin states are close in energy. The spin frustrated ring is visualized by a Moebius strip. The ?knot? of the strip represents the region of the ring where the AF interactions are more frustrated. In the particular case of this bimetallic ring electron paramagnetic resonance (EPR) has unambiguously shown that the frustration is delocalized on the chromium chain, while the antiparallel alignment is more rigid at the nickel site.
Oscillator-strength sum rule in light-induced transitions is one general form of quantum-mechanical identities. Although this sum rule is well established in equilibrium photo-physics, an experimental corroboration for the validation of the sum rule in a nonequilibrium regime has been a long-standing unexplored question. The simple band structure of graphene is an ideal system for investigating this question due to the linear Dirac-like energy dispersion. Here, we employed both ultrafast terahertz and optical spectroscopy to directly monitor the transient oscillator-strength balancing between quasi-free low-energy oscillators and high-energy Fermi-edge ones. Upon photo-excitation of hot Dirac fermions, we observed that the ultrafast depletion of high-energy oscillators precisely complements the increased terahertz absorption oscillators. Our results may provide an experimental priori to understand, for example, the intrinsic free-carrier dynamics to the high-energy photo-excitation, responsible for optoelectronic operation such as graphene-based phototransistor or solar-energy harvesting devices.
Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets that represent the more common form of magnetically ordered materials, have so far found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstrations of the electrical switching and electrical detection of the Neel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated in antiferromagnets are inherently multilevel which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of the ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanics origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices
NiO is a prototypical antiferromagnet with a characteristic resonance frequency in the THz range. From atomistic spin dynamics simulations that take into account the crystallographic structure of NiO, and in particular a magnetic anisotropy respecting its symmetry, we describe antiferromagnetic switching at THz frequency by a spin transfer torque mechanism. Sub-picosecond S-state switching between the six allowed stable spin directions is found for reasonably achievable spin currents, like those generated by laser induced ultrafast demagnetization. A simple procedure for picosecond writing of a six-state memory is described, thus opening the possibility to speed up current logic of electronic devices by several orders of magnitude.
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