Superconductivity often occurs close to broken-symmetry parent states and is especially common in doped magnetic insulators. When twisted close to a magic relative orientation angle near 1 degree, bilayer graphene has flat moire superlattice minibands that have emerged as a rich and highly tunable source of strong correlation physics, notably the appearance of superconductivity close to interaction-induced insulating states. Here we report on the fabrication of bilayer graphene devices with exceptionally uniform twist angles. We show that the reduction in twist angle disorder reveals insulating states at all integer occupancies of the four-fold spin/valley degenerate flat conduction and valence bands, i.e. at moire band filling factors nu = 0, +(-) 1, +(-) 2, +(-) 3, and superconductivity below critical temperatures as high as 3 K close to - 2 filling. We also observe three new superconducting domes at much lower temperatures close to the nu = 0 and nu = +(-) 1 insulating states. Interestingly, at nu = +(-) 1 we find states with non-zero Chern numbers. For nu = - 1 the insulating state exhibits a sharp hysteretic resistance enhancement when a perpendicular magnetic field above 3.6 tesla is applied, consistent with a field driven phase transition. Our study shows that symmetry-broken states, interaction driven insulators, and superconducting domes are common across the entire moire flat bands, including near charge neutrality.
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