No Arabic abstract
We review recent precision measurements on semiconductor tunable-barrier electron pumps operating in a ratchet mode. Seven studies on five different designs of pumps have reported measurements of the pump current with relative total uncertainties around $10^{-6}$ or less. Combined with theoretical models of electron capture by the pumps, these experimental data exhibits encouraging evidence that the pumps operate according to a universal mechanism, independent of the details of device design. Evidence for robustness of the pump current against changes in the control parameters is at a more preliminary stage, but also encouraging, with two studies reporting robustness of the pump current against three or more parameters in the range of $sim!5 times 10^{-7}$ to $sim!2 times 10^{-6}$. This review highlights the need for an agreed protocol for tuning the electron pump for optimal operation, as well as more rigorous evaluations of the robustness in a wide range of pump designs.
We demonstrate the robust operation of a gallium arsenide tunable-barrier single-electron pump operating with 1 part-per-million accuracy at a temperature of $1.3$~K and a pumping frequency of $500$~MHz. The accuracy of current quantisation is investigated as a function of multiple control parameters, and robust plateaus are seen as a function of three control gate voltages and RF drive power. The electron capture is found to be in the decay-cascade, rather than the thermally-broadened regime. The observation of robust plateaus at an elevated temperature which does not require expensive refrigeration is an important step towards validating tunable-barrier pumps as practical current standards.
Single electron sources have been studied as a device to establish an electric current standard for 30 years and recently as an on-demand coherent source for Fermion quantum optics. In order to construct the single electron source on a GaAs/AlGaAs two-dimensional electron gas (2DEG), it is often necessary to fabricate a sub-micron wire by etching. We have established techniques to make the wire made of the fragile 2DEG by combining photolithography and electron beam lithography with one-step photoresist coating, which enables us to etch fine and coarse structures simultaneously. It has been demonstrated that a single electron source fabricated on the narrow wire pumps fixed number of electrons per one cycle with radio frequency. The fabrication technique improves the lithography process with lower risk to damage the 2DEG and is applicable to etching of other materials and dry etching.
We study the effect of perpendicular magnetic fields on a single-electron system with a strongly time-dependent electrostatic potential. Continuous improvements to the current quantization in these electron pumps are revealed by high-resolution measurements. Simulations show that the sensitivity of tunnel rates to the barrier potential is enhanced, stabilizing particular charge states. Nonadiabatic excitations are also suppressed due to a reduced sensitivity of the Fock-Darwin states to electrostatic potential. The combination of these effects leads to significantly more accurate current quantization.
Recently nanomechanical devices composed of a long stationary inner carbon nanotube and a shorter, slowly-rotating outer tube have been fabricated. In this Letter, we study the possibility of using such devices as adiabatic quantum pumps. Using the Brouwer formula, we employ a Greens function technique to determine the pumped charge from one end of the inner tube to the other, driven by the rotation of a chiral outer nanotube. We show that there is virtually no pumping if the chiral angle of the two nanotubes is the same, but for optimal chiralities the pumped charge can be a significant fraction of a theoretical upper bound.
We report electronic transport experiments on a graphene single electron transistor. The device consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions. It is electrostatically tunable by three lateral graphene gates and an additional back gate. The tunneling coupling is a strongly nonmonotonic function of gate voltage indicating the presence of localized states in the barriers. We investigate energy scales for the tunneling gap, the resonances in the constrictions and for the Coulomb blockade resonances. From Coulomb diamond measurements in different device configurations (i.e. barrier configurations) we extract a charging energy of 3.4 meV and estimate a characteristic energy scale for the constriction resonances of 10 meV.