Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userMonolithic integration of single photon sources via evanescent coupling of tapered InP nanowires to SiN waveguides
79
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We demonstrate a method to monolithically integrate nanowire-based quantum dot single photon sources on-chip using evanescent coupling. By deterministically placing an appropriately tapered III-V nanowire waveguide, containing a single quantum dot, on top of a silicon-based ridge waveguide, the quantum dot emission can be transferred to the ridge waveguide with calculated efficiencies close to 100%. As the evanescent coupling is bidirectional, the source can be optically pumped in both free-space and through the ridge waveguide. The latter onfiguration provides a self-contained, all-fiber, single photon source suitable as a plug-and-play solution for applications requiring bright, on-demand single photons. Using InAsP quantum dots embedded in InP nanowire waveguides, we demonstrate coupling efficiencies to a SiN ridge waveguide of 74% with a single photon purity of 97%.
rate research
Read More
Direct UV-written waveguides are fabricated in silica-on-silicon with birefringence of $(4.9 pm 0.2) times 10^{-4}$, much greater than previously reported in this platform. We show that these waveguides are suitable for the generation of heralded single photons at telecommunication wavelengths by spontaneous four-wave mixing. A pulsed pump field at 1060 nm generates pairs of photons in highly detuned, spectrally uncorrelated modes near 1550 nm and 800 nm. Waveguide-to-fiber coupling efficiencies of 78-91% are achieved for all fields. Waveguide birefringence is controlled through dopant concentration of $mathrm{GeCl_4}$ and $mathrm{BCl_3}$ using the flame hydrolysis deposition process. The technology provides a route towards the scalability of silica-on-silicon integrated components for photonic quantum experiments.
We demonstrate a monolithic III-V photonic circuit combining a heralded single photon source with a beamsplitter, at room temperature and telecom wavelength. Pulsed parametric down-conversion in an AlGaAs waveguide generates counterpropagating photons, one of which is used to herald the injection of its twin into the beamsplitter. We use this configuration to implement an integrated Hanbury-Brown and Twiss experiment, yielding a heralded second-order correlation $g^{(2)}_{rm her}(0)=0.10 pm 0.02$ that confirms single-photon operation. The demonstrated generation and manipulation of quantum states on a single III-V semiconductor chip opens promising avenues towards real-world applications in quantum information.
We present a monolithic semiconductor microcavity design for enhanced light-matter interaction and photon extraction efficiency of an embedded quantum emitter such as a quantum dot or color center. The microcavity is a hemispherical Fabry-Perot design consisting of a planar back mirror and a top curved mirror. Higher order modes are suppressed in the structure by reducing the height of the curved mirror, leading to efficient photon extraction into a fundamental mode with a Gaussian far-field radiation pattern. The cavity finesse can be varied easily by changing the reflectivity of the mirrors and we consider two specific cases: a low-finesse structure for enhanced broad band photon extraction from self-assembled quantum dots and a moderate-finesse cavity for enhanced extraction of single photons from the zero-phonon line of color centers in diamond. We also consider the impact of structural imperfections on the cavity performance. Finally, we present the fabrication and optical characterisation of monolithic GaAs hemispherical microcavities.
Hexagonal boron nitride (hBN) is gaining interest for potential applications in integrated quantum nanophotonics. Yet, to establish hBN as an integrated photonic platform several cornerstones must be established, including the integration and coupling of quantum emitters to photonic waveguides. Supported by simulations, we study the approach of monolithic integration, which is expected to have coupling efficiencies that are 4 times higher than those of a conventional hybrid stacking strategy. We then demonstrate the fabrication of such devices from hBN and showcase the successful integration of hBN single photon emitters with a monolithic waveguide. We demonstrate coupling of single photons from the quantum emitters to the waveguide modes and on-chip detection. Our results build a general framework for monolithically integrated hBN single photon emitter and will facilitate future works towards on-chip integrated quantum photonics with hBN.
Integrated optical isolators have been a longstanding challenge for photonic integrated circuits (PIC). An ideal integrated optical isolator for PIC should be made by a monolithic process, have a small footprint, exhibit broadband and polarization-diverse operation, and be compatible with multiple materials platforms. Despite significant progress, the optical isolators reported so far do not meet all these requirements. In this article we present monolithically integrated broadband magneto-optical isolators on silicon and silicon nitride (SiN) platforms operating for both TE and TM modes with record high performances, fulfilling all the essential characteristics for PIC applications. In particular, we demonstrate fully-TE broadband isolators by depositing high quality magneto-optical garnet thin films on the sidewalls of Si and SiN waveguides, a critical result for applications in TE-polarized on-chip lasers and amplifiers. This work demonstrates monolithic integration of high performance optical isolators on chip for polarization-diverse silicon photonic systems, enabling new pathways to impart nonreciprocal photonic functionality to a variety of integrated photonic devices.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
