Extensive researches have revealed that valley, a binary degree of freedom (DOF), can be an excellent candidate of information carrier. Recently, valley DOF has been introduced into photonic systems, and several valley-Hall photonic topological insulators (PTIs) have been experimentally demonstrated. However, in the previous valley-Hall PTIs, topological kink states only work at a single frequency band, which limits potential applications in multiband waveguides, filters, communications, and so on. To overcome this challenge, here we experimentally demonstrate a valley-Hall PTI, where the topological kink states exist at two separated frequency bands, in a microwave substrate-integrated circuitry. Both the simulated and experimental results demonstrate the dual-band valley-Hall topological kink states are robust against the sharp bends of the internal domain wall with negligible inter-valley scattering. Our work may pave the way for multi-channel substrate-integrated photonic devices with high efficiency and high capacity for information communications and processing.
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