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Register a new userRoom temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Greens functions
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n-type Ge/SiGe terahertz quantum cascade laser are investigated using non-equilibrium Greens functions calculations. We compare the temperature dependence of the terahertz gain properties with an equivalent GaAs/AlGaAs QCL design. In the Ge/SiGe case, the gain is found to be much more robust to temperature increase, enabling operation up to room temperature. The better temperature robustness with respect to III-V is attributed to the much weaker interaction with optical phonons. The effect of lower interface quality is investigated and can be partly overcome by engineering smoother quantum confinement via multiple barrier heights.
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We report electroluminescence originating from L-valley transitions in n-type Ge/Si$_{0.15}$Ge$_{0.85}$ quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of $Delta f/f approx 0.2$. Three strain-compensated heterostructures, grown on a Si substrate by ultrahigh vacuum chemical vapor deposition, have been investigated. The design is based on a single quantum well active region employing a vertical optical transition and the observed spectral features are well described by non-equilibrium Greens function calculations. The presence of two peaks highlights a suboptimal injection in the upper state of the radiative transition. Comparison of the electroluminescence spectra with similar GaAs/AlGaAs structure yields one order of magnitude lower emission efficiency.
Resonant phonon depopulation terahertz quantum cascade lasers based on vertical and diagonal lasing transitions are systematically compared using a well established ensemble Monte Carlo approach. The analysis shows that for operating temperatures below 200 K, diagonal designs may offer superior temperature performance at lasing frequencies of about 3.5 THz and above; however, vertical structures are more advantageous for good temperature performance at lower frequencies.
We present a two-quantum well THz intersubband laser operating up to 192 K. The structure has been optimized with a non-equilibrium Greens function model. The result of this optimization was confirmed experimentally by growing, processing and measuring a number of proposed designs. At high temperature (T>200 K), the simulations indicate that lasing fails due to a combination of electron-electron scattering, thermal backfilling, and, most importantly, re-absorption coming from broadened states.
High power single mode quantum cascade lasers with a narrow far field are important for several applications including surgery or military countermeasure. Existing technologies suffer from drawbacks such as operation temperature and scalability. In this paper we introduce a fabrication approach that potentially solves simultaneously these remaining limitations. We demonstrate and characterize deep etched, buried photonic crystal quantum cascade lasers emitting around a wavelength of 8.5 {mu}m. The active region was dry etched before being regrown with semi-insulating Fe:InP. This fabrication strategy results in a refractive index contrast of 10% allowing good photonic mode control, and simultaneously provides good thermal extraction during operation. Single mode emission with narrow far field pattern and peak powers up to 0.88 W at 263 K were recorded from the facet of the photonic crystal laser, and lasing operation was maintained up to room temperature. The lasing modes emitted from square photonic crystal mesas with a side length of 550{mu}m, were identified as slow Bloch photonic crystal modes by means of three-dimensional photonic simulations and measurements.
We report on a new design of terahertz quantum cascade laser based on a single, potential-inserted quantum well active region. The quantum well properties are engineered through single monolayer InAs inserts. The modeling is based on atomistic, spds* tight-binding calculations, and performances are compared to that of the classical three-well design. We obtain a 100% increase of the oscillator strength per unit length, while maintaining a high, nearly temperature-independent contrast between phonon-induced relaxation times of the upper and lower lasing states. The improved performances are expected to allow THz lasing at room temperature.
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