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Register a new userFour-wave mixing and nonlinear parameter measurement in a gallium-nitride ridge waveguide
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Gallium-nitride (GaN) is a promising material platform for integrated electro-optic devices due to its wide direct bandgap, pronounced nonlinearities and high optical damage threshold. Low-loss ridge waveguides in GaN layers were recently demonstrated. In this work we provide a first report of four-wave mixing in a GaN waveguide at telecommunication wavelengths, and observe comparatively high nonlinear propagation parameters. The nonlinear coefficient of the waveguide is measured as 1.6 +/- 0.45 [W*m]-1, and the corresponding third-order nonlinear parameter of GaN is estimated as 3.4e-18 +/- 1e-18 [m^2/W]. The results suggest that GaN waveguides could be instrumental in nonlinear-optical signal processing applications.
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Gallium nitride (GaN) as a wide-band gap material has been widely used in solid-state lighting. Thanks to its high nonlinearity and high refractive index contrast, GaN-on-insulator (GaNOI) is also a promising platform for nonlinear optical applications. Despite its intriguing optical proprieties, nonlinear applications of GaN have rarely been studied due to the relatively high optical loss of GaN waveguides (2 dB/cm). In this letter, we report GaNOI microresonator with intrinsic quality factor over 2 million, corresponding to an optical loss of 0.26 dB/cm. Parametric oscillation threshold power as low as 8.8 mW is demonstrated, and the experimentally extracted nonlinear index of GaN at telecom wavelengths is estimated to be n2 = 1.2*10 -18 m2W-1, which is comparable with silicon. Single soliton generation in GaN is implemented by an auxiliary laser pumping scheme, so as to mitigate the high thermorefractive effect in GaN. The large intrinsic nonlinear refractive index, together with its broadband transparency window and high refractive index contrast, make GaNOI a most balanced platform for chip-scale nonlinear applications.
The unique linear and massless band structure of graphene, in a purely two-dimensional Dirac fermionic structure, have led to intense research spanning from condensed matter physics to nanoscale device applications covering the electrical, thermal, mechanical and optical domains. Here we report three consecutive first-observations in graphene-silicon hybrid optoelectronic devices: (1) ultralow power resonant optical bistability; (2) self-induced regenerative oscillations; and (3) coherent four-wave mixing, all at a few femtojoule cavity recirculating energies. These observations, in comparison with control measurements with solely monolithic silicon cavities, are enabled only by the dramatically-large and chi(3) nonlinearities in graphene and the large Q/V ratios in wavelength-localized photonic crystal cavities. These results demonstrate the feasibility and versatility of hybrid two-dimensional graphene-silicon nanophotonic devices for next-generation chip-scale ultrafast optical communications, radio-frequency optoelectronics, and all-optical signal processing.
We suggest a scheme to manipulate paraxial diffraction by utilizing the dependency of a four-wave mixing process on the relative angle between the light fields. A microscopic model for four-wave mixing in a Lambda-type level structure is introduced and compared to recent experimental data. We show that images with feature size as low as 10 micrometers can propagate with very little or even negative diffraction. The mechanism is completely different from that conserving the shape of spatial solitons in nonlinear media, as here diffraction is suppressed for arbitrary spatial profiles. At the same time, the gain inherent to the nonlinear process prevents loss and allows for operating at high optical depths. Our scheme does not rely on atomic motion and is thus applicable to both gaseous and solid media.
We experimentally and theoretically investigate the process of seeded intermodal four-wave mixing in a graded index multimode fiber, pumped in the normal dispersion regime. By using a fiber with a 100 micron core diameter, we generate a parametric sideband in the C band (1530-1565 nm), hence allowing the use of an Erbium-based laser to seed the mixing process. To limit nonlinear coupling between the pump and the seed to low-order fiber modes, the waist diameter of the pump beam is properly adjusted. We observe that the superimposed seed stimulates the generation of new spectral sidebands. A detailed characterization of the spectral and spatial properties of these sidebands shows good agreement with theoretical predictions from the phase-matching conditions. Interestingly, we demonstrate that both the second and the fourth-order dispersions must be included in the phase matching conditions to get better agreement with experimental measurements. Furthermore, temporal measurements performed with a fast photodiode reveal the generation of multiple pulse structures.
We experimentally demonstrate stimulated four-wave mixing in two linearly uncoupled integrated Si$_3$N$_4$ micro-resonators. In our structure the resonance combs of each resonator can be tuned independently, with the energy transfer from one resonator to the other occurring in the presence of a nonlinear interaction. This method allows flexible and efficient on-chip control of the nonlinear interaction, and is readily applicable to other third-order nonlinear phenomena.
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