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Register a new userEffect of CuO2 lattice strain on the electronic structure and properties of high-Tc cuprate family
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Ilya Makarov
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Doping and strain dependences of the electronic structure of the CuO6-octahedra layer within LDA+GTB method in the frameworks of six-band p-d model are calculated. Band structure and Fermi surface of the quasiparticle excitations in the effective Hubbard model are characterized by inhomogeneous distribution of the k-dependent spectral weight. Doping results in reconstruction of the band structure, redistribution of the spectral weight over dispersion surface and reconstruction of Fermi surface from small hole pockets in the underdoped region to large hole contour in the overdoped region through two quantum phase transitions (QPT). Strain increasing leads to displacement of the valence and conductivity bands, bandwidths decreasing and shift of the concentrations corresponding to QPTs. Strain dependences of the antiferromagnetic exchange coupling and DOS at the Fermi level determining superconducting temperature Tc are obtained. Effective exchange coupling in the equation for Tc demonstrates monotonic strain dependence.
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We present cluster-DMFT (CTQMC) calculations based on a downfolded tight-binding model in order to study the electronic structure of vanadium dioxide (VO_2) both in the low-temperature (M_1) and high-temperature (rutile) phases. Motivated by the recent efforts directed towards tuning the physical properties of VO_2 by depositing films on different supporting surfaces of different orientations we performed calculations for different geometries for both phases. In order to investigate the effects of the different growing geometries we applied both contraction and expansion for the lattice parameter along the rutile c-axis in the 3-dimensional translationally invariant systems miming the real situation. Our main focus is to identify the mechanisms governing the formation of the gap characterizing the M_1 phase and its dependence on strain. We found that the increase of the band-width with compression along the axis corresponding to the rutile c-axis is more important than the Peierls bonding-antibonding splitting.
We report a genuine phase diagram for a disorder-free CuO_2 plane based on the precise evaluation of the local hole density (N_h) by site-selective Cu-NMR studies on five-layered high-Tc cuprates. It has been unraveled that (1) the antiferromagnetic metallic state (AFMM) is robust up to N_h=0.17, (2) the uniformly mixed phase of superconductivity (SC) and AFMM is realized at N_h< 0.17, (3) the tetracritical point for the AFMM/(AFMM+SC)/SC/PM(Paramagnetism) phases may be present at N_h=0.15 and T=75 K, (4) Tc is maximum close to a quantum critical point (QCP) at which the AFM order collapses, suggesting the intimate relationship between the high-Tc SC and the AFM order. The results presented here strongly suggest that the AFM interaction plays the vital role as the glue for the Cooper pairs, which will lead us to a genuine understanding of why the Tc of cuprate superconductors is so high.
We present a theoretical study of the effect of electron-electron interactions and Sr doping on the electronic structure of infinite-layer (Nd,Sr)NiO$_2$ using the density functional+dynamical mean-field theory approach. In particular, we explore the impact of epitaxial compressive strain that experience (Nd,Sr)NiO$_2$ films on the electronic properties, magnetic correlations, and exchange couplings. Our results reveal the crucial importance of orbital-dependent correlation effects in the Ni $3d$ shell of Sr-doped NdNiO$_2$. Upon doping with Sr, it undergoes a Lifshitz transition which is accompanied by a reconstruction of magnetic correlations: For Sr $x<0.2$ (Nd,Sr)NiO$_2$ adopts the Neel $(111)$ antiferromagnetic (AFM) order, while for $x>0.2$ the $C$-type $(110)$ AFM sets in the unstrained (Nd,Sr)NiO$_2$, with a highly frustrated region at $x simeq 0.2$, all within DFT+DMFT at $T=290$ K. Our results for the Neel AFM at Sr $x=0$ suggest that AFM NdNiO$_2$ appears at the verge of a Mott-Hubbard transition, providing a plausible explanation for the experimentally observed weakly insulating behavior of NdNiO$_2$ for Sr $x<0.1$. We observe that the Lifshitz transition makes a change of the band structure character from electron- to hole-like with Sr $x$, in agreement with recent experiments. Our results for magnetic couplings demonstrate an unanticipated frustration of the Ni $3d$ magnetic moments, which suppresses magnetic order near Sr $x=0.2$. We find that the effect of frustration is maximal for Sr doping $x simeq 0.1-0.2$ that nearly corresponds to the experimentally observed doping value. We conclude that the in-plane strain adjusts a bandwidth of the Ni $x^2-y^2$ band, i.e., controls the effect of electron correlations in the Ni $x^2-y^2$ orbitals. The electronic properties of (Nd,Sr)NiO$_2$ reveal an anomalous sensitivity upon a change of the crystal structure parameters.
Reproducing the electronic structure of AM$_4$X$_8$ lacunar spinels with a breathing pyrochlore lattice is a great theoretical challenge due to the interplay of various factors. The character of the M$_4$X$_4$ cluster orbitals is critically influenced by the Jahn-Teller instability, the spin-orbit interaction, and also by the magnetic state of the clusters. Consequently, to reproduce the narrow-gap semiconducting nature of these moderately correlated materials requires advanced approaches, since the strength of the inter-cluster hopping is strongly affected by the character of the cluster orbitals. In order to provide a solid experimental basis for theoretical studies, we performed broadband optical spectroscopy on a large set of lacunar spinels, with systematically changing ions at the A and M sites as well as the ligand (A=Ga, Ge, Al; M=V, Mo, Nb, Ta; X=S, Se). Our study covers the range of phonon excitations and also electronic transitions near the gap edge. In the phonon excitation spectrum a limited subset of the symmetry allowed modes is observed in the cubic state, with a few additional modes emerging upon the symmetry-lowering structural transition. All the infrared active modes are assigned to vibrations of the ligands and ions at the A sites, with no obvious contribution from the M-site ions. Concerning the electronic states, we found that all compounds are narrow-gap semiconductors ($E_mathrm{g} = 130 - 350,$meV) already in their room-temperature cubic state and their structural transitions induce weak, if any, changes in the band gap. The gap value is decreased when substituting S with Se and also when replacing $3d$ ions by $4d$ or $5d$ ions at the M sites.
Electron-hole hybridization in InAs/GaSb double quantum well structures leads to the formation of a mini band gap. We experimentally and theoretically studied the impact of strain on the transport properties of this material system. Thinned samples were mounted to piezo electric elements to exert strain along the [011] and [001] crystal directions. When the Fermi energy is tuned through the mini gap, a dramatic impact on the resistivity at the charge neutrality point is found which depends on the amount of applied external strain. In the electron and hole regimes, strain influences the Landau level structure. By analyzing the intrinsic strain from the epitaxial growth, the external strain from the piezo elements and combining our experimental results with numerical simulations of strained and unstrained quantum wells, we compellingly illustrate why the InAs/GaSb material system is regularly found to be semimetallic.
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