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Register a new userConvergent and divergent beam electron holography and reconstruction of adsorbates on free-standing two-dimensional crystals
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Added by
Tatiana Latychevskaia
Publication date
2018
fields
Physics
and research's language is
English
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Van der Waals heterostructures have been lately intensively studied because they offer a large variety of properties that can be controlled by selecting 2D materials and their sequence in the stack. The exact arrangement of the layers as well as the exact arrangement of the atoms within the layers, both are important for the properties of the resulting device. Recently it has been demonstrated that convergent beam electron diffraction (CBED) allows quantitative three-dimensional mapping of atomic positions in three-dimensional materials from a single CBED pattern. In this study we investigate CBED in more detail by simulating and performing various CBED regimes, with convergent and divergent wavefronts, on a somewhat simplified system: a 2D monolayer crystal. In CBED, each CBED spot is in fact an in-line hologram of the sample, where in-line holography is known to exhibit high intensity contrast in detection of weak phase objects that are not detectable in conventional in-focus imaging mode. Adsorbates exhibit strong intensity contrast in zero and higher order CBED spots, whereas lattice deformation such as strain or rippling cause noticeable intensity contrast only in the first and higher order CBED spots. The individual CBED spots can be reconstructed as typical in-line holograms, and the resolution of 2.13 A can be in principle achieved in the reconstructions. We provide simulated and experimental examples of CBED of a 2D monolayer crystal. The simulations show that individual CBED spots can be treated as in-line holograms and sample distributions such as adsorbates, can be reconstructed. Individual atoms can be reconstructed from a single CBED pattern provided the later exhibits high-order CBED spots. Examples of reconstructions obtained from experimental CBED patterns, at a resolution of 2.7 A, are shown.
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Bulk amorphous materials have been studied extensively and are widely used, yet their atomic arrangement remains an open issue. Although they are generally believed to be Zachariasen continuous random networks, recent experimental evidence favours the competing crystallite model in the case of amorphous silicon. In two-dimensional materials, however, the corresponding questions remain unanswered. Here we report the synthesis, by laser-assisted chemical vapour deposition, of centimetre-scale, free-standing, continuous and stable monolayer amorphous carbon, topologically distinct from disordered graphene. Unlike in bulk materials, the structure of monolayer amorphous carbon can be determined by atomic-resolution imaging. Extensive characterization by Raman and X-ray spectroscopy and transmission electron microscopy reveals the complete absence of long-range periodicity and a threefold-coordinated structure with a wide distribution of bond lengths, bond angles, and five-, six-, seven- and eight-member rings. The ring distribution is not a Zachariasen continuous random network, but resembles the competing (nano)crystallite model. We construct a corresponding model that enables density-functional-theory calculations of the properties of monolayer amorphous carbon, in accordance with observations. Direct measurements confirm that it is insulating, with resistivity values similar to those of boron nitride grown by chemical vapour deposition. Free-standing monolayer amorphous carbon is surprisingly stable and deforms to a high breaking strength, without crack propagation from the point of fracture. The excellent physical properties of this stable, free-standing monolayer amorphous carbon could prove useful for permeation and diffusion barriers in applications such as magnetic recording devices and flexible electronics.
Van der Waals heterostructures, which explore the synergetic properties of two-dimensional (2D) materials when assembled into three-dimensional stacks, have already brought to life a number of exciting new phenomena and novel electronic devices. Still, the interaction between the layers in such assembly, possible surface reconstruction, intrinsic and extrinsic defects are very difficult to characterise by any method, because of the single-atomic nature of the crystals involved. Here we present a convergent beam electron holographic technique which allows imaging of the stacking order in such heterostructures. Based on the interference of electron waves scattered on different crystals in the stack, this approach allows one to reconstruct the relative rotation, stretching, out-of-plane corrugation of the layers with atomic precision. Being holographic in nature, our approach allows extraction of quantitative information about the three-dimensional structure of the typical defects from a single image covering thousands of square nanometres. Furthermore, qualitative information about the defects in the stack can be extracted from the convergent diffraction patterns even without reconstruction - simply by comparing the patterns in different diffraction spots. We expect that convergent beam electron holography will be widely used to study the properties of van der Waals heterostructures.
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