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3D Dirac semimetal Cd3As2: A review of material properties

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 Added by Milan Orlita
 Publication date 2018
  fields Physics
and research's language is English




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Cadmium arsenide (Cd3As2) - a time-honored and widely explored material in solid-state physics - has recently attracted considerable attention. This was triggered by a theoretical prediction concerning the presence of 3D symmetry-protected massless Dirac electrons, which could turn Cd3As2 into a 3D analogue of graphene. Subsequent extended experimental studies have provided us with compelling experimental evidence of conical bands in this system, and revealed a number of interesting properties and phenomena. At the same time, some of the material properties remain the subject of vast discussions despite recent intensive experimental and theoretical efforts, which may hinder the progress in understanding and applications of this appealing material. In this review, we focus on the basic material parameters and properties of Cd3As2, in particular those which are directly related to the conical features in the electronic band structure of this material. The outcome of experimental investigations, performed on Cd3As2 using various spectroscopic and transport techniques within the past sixty years, is compared with theoretical studies. These theoretical works gave us not only simplified effective models, but more recently, also the electronic band structure calculated numerically using ab initio methods.



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We measured the optical reflectivity of [001]-oriented $n$-doped Cd$_{3}$As$_{2}$ in a broad frequency range (50 - 22000 cm$^{-1}$) for temperatures from 10 to 300 K. The optical conductivity, $sigma(omega) = sigma_{1}(omega) + {rm i}sigma_{2}(omega)$, is isotropic within the (001) plane; its real part follows a power law, $sigma_{1}(omega) propto omega^{1.65}$, in a large interval from 2000 to 8000 cm$^{-1}$. This behavior is caused by interband transitions between two Dirac bands, which are effectively described by a sublinear dispersion relation, $E(k) propto lvert k rvert ^{0.6}$. The momentum-averaged Fermi velocity of the carriers in these bands is energy dependent and ranges from $1.2 times 10^{5}$ to $3 times 10^{5}$ m/s, depending on the distance from the Dirac points. We detect a gaplike feature in $sigma_{1}(omega)$ and associate it with the Fermi level positioned around $100$ meV above the Dirac points.
Experimental identification of three-dimensional (3D) Dirac semimetals in solid state systems is critical for realizing exotic topological phenomena and quantum transport such as the Weyl phases, high temperature linear quantum magnetoresistance and topological magnetic phases. Using high resolution angle-resolved photoemission spectroscopy, we performed systematic electronic structure studies on well-known compound Cd3As2. For the first time, we observe a highly linear bulk Dirac cone located at the Brillouin zone center projected onto the (001) surface which is consistent with a 3D Dirac semimetal phase in Cd3As2. Remarkably, an unusually high Dirac Fermion velocity up to 10.2 textrm{AA}{cdot}$eV (1.5 times 10^{6} ms^-1) is seen in samples where the mobility far exceeds 40,000 cm^2/V.s suggesting that Cd3As2 can be a promising candidate as a hypercone analog of graphene in many device-applications which can also incorporate topological quantum phenomena in a large gap setting. Our experimental identification of this novel topological 3D Dirac semimetal phase, distinct from a 3D topological insulator phase discovered previously, paves the way for exploring higher dimensional relativistic physics in bulk transport and for realizing novel Fermionic matter such as a Fermi arc nodal metal.
Dirac and Weyl semimetals display a host of novel properties. In Cd$_3$As$_2$, the Dirac nodes lead to a protection mechanism that strongly suppresses backscattering in zero magnetic field, resulting in ultrahigh mobility ($sim$ 10$^7$ cm$^2$ V$^{-1}$ s$^{-1}$). In applied magnetic field, an anomalous Nernst effect is predicted to arise from the Berry curvature associated with the Weyl nodes. We report observation of a large anomalous Nernst effect in Cd$_3$As$_2$. Both the anomalous Nernst signal and transport relaxation time $tau_{tr}$ begin to increase rapidly at $sim$ 50 K. This suggests a close relation between the protection mechanism and the anomalous Nernst effect. In a field, the quantum oscillations of bulk states display a beating effect, suggesting that the Dirac nodes split into Weyl states, allowing the Berry curvature to be observed as an anomalous Nernst effect.
We report an investigation of temperature- and doping-dependent thermoelectric behaviors of topological semimetal Cd3As2. The electrical conductivity, thermal conductivity, Seebeck coefficient, and figure of merit (ZT) are calculated by using Boltzmann transport theory. The calculated thermoelectric properties of the pristine Cd3As2 match well the experimental results. The electron or hole doping, especially the latter, is found improving much the thermoelectric behaviors of the material. The optimum merit ZT of Cd3As2 with electron doping is found to be about 0.5 at T=700 K with n=1x1020 cm-3, much larger than the maximum experimental value obtained for the pristine Cd3As2 (~0.15). For the p-type Cd3As2, the maximal value of the Seebeck coefficient as a function of temperature increases apparently with the increase of the hole doping concentration and its position shifts drastically towards the lower temperature region compared to that of the n-type Cd3As2, leading to the optimum merit ZT of about 0.5 obtained at low temperature of 500K (p=1x1020 cm-3) in the p-type Cd3As2.
A three-dimensional Dirac semimetal has bulk Dirac cones in all three momentum directions and Fermi arc-like surface states, and can be converted into a Weyl semimetal by breaking time-reversal symmetry. However, the highly conductive bulk state usually hides the electronic transport from the surface state in Dirac semimetal. Here, we demonstrate the supercurrent carried by bulk and surface states in Nb-Cd3As2 nanowire-Nb short and long junctions, respectively. For the 1 micrometer long junction, the Fabry-Perot interferences induced oscillations of the critical supercurrent are observed, suggesting the ballistic transport of the surface states carried supercurrent, where the bulk states are decoherent and the topologically protected surface states still keep coherent. Moreover, a superconducting dome is observed in the long junction, which is attributed to the enhanced dephasing from the interaction between surface and bulk states as tuning gate voltage to increase the carrier density. The superconductivity of topological semimetal nanowire is promising for braiding of Majorana fermions toward topological quantum computing.
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