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Register a new userGiant Intrinsic Spin Hall Effect in W$_3$Ta and other A15 Superconductors
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The spin Hall effect (SHE) is the conversion of charge current to spin current, and non-magnetic metals with large SHEs are extremely sought after for spintronic applications, but their rarity has stifled widespread use. Here we predict and explain the large intrinsic SHE in $beta$-W and the A15 family of superconductors: W$_3$Ta, Ta$_3$Sb, and Cr$_3$Ir having spin hall conductivities (SHC) of -2250, -1400, and 1210 $frac{hbar}{e}(Omega cm)^{-1}$, respectively. Combining concepts from topological physics with the dependence of the SHE on the spin Berry curvature (SBC) of the electronic bands, we propose a simple strategy to rapidly search for materials with large intrinsic SHEs based on the following ideas: high symmetry combined with heavy atoms gives rise to multiple Dirac-like crossings in the electronic structure, without sufficient symmetry protection these crossings gap due to spin orbit coupling (SOC), and gapped Dirac crossings create large spin Berry curvature.
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As spintronic devices become more and more prevalent, the desire to find Pt free materials with large spin Hall effects is increasing. Previously it was shown that Beta W, the metastable A15 structured variant of pure W, has charge-spin conversion efficiencies on par with Pt, and it was predicted that Beta W(Ta) alloys should be even more efficient. Here we demonstrate the enhancement of the spin Hall ratio (SHR) in A15-phase Beta W films doped with Ta (W(4-x)Tax where x is between 0.28 and 0.4, deposited at room temperature using DC magnetron co-sputtering. In close agreement with theoretical predictions, we find that the SHR of the doped films was approx. 9 percent larger than pure Beta W films. We also found that the SHRs in devices with Co2Fe6B2 were nearly twice as large as the SHRs in devices with Co4Fe4B2. This work shows that by optimizing deposition parameters and substrates, the fabrication of the optimum W3Ta alloy should be feasible, opening the door to commercially viable, Pt free, spintronic devices.
Valleytronic materials, characterized by local extrema (valley) in their bands, and topological insulators have separately attracted great interest recently. However, the interplay between valleytronic and topological properties in one single system, likely to enable important unexplored phenomena and applications, has been largely overlooked so far. Here, by combining a tight-binding model with first-principles calculations, we find the large-band-gap quantum spin Hall effects (QSHEs) and valley Hall effects (VHEs) appear simultaneously in the Bi monolayers decorated with halogen elements, denoted as Bi2XY (X, Y = H, F, Cl, Br, or I). A staggered exchange field is introduced into the Bi2XY monolayers by transition metal atom (Cr, Mo, or W) doping or LaFeO3 magnetic substrates, which together with the strong SOC of Bi atoms generates a time-reversal-symmetry-broken QSHE and a huge valley splitting (up to 513 meV) in the system. With gate control, QSHE and anomalous charge, spin, valley Hall effects can be observed in the single system. These predicted multiple and exotic Hall effects, associated with various degrees of freedom of electrons, could enable applications of the functionalized Bi monolayers in electronics, spintronics, and valleytronics.
The nonlinear Hall effect is mostly studied as a Berry curvature dipole effect in nonmagnetic materials, which depends linearly on the relaxation time. On the other hand, in magnetic materials, an intrinsic nonlinear Hall effect can exist, which does not depend on the relaxation time. Here we show that the intrinsic nonlinear Hall effect can be observed in an antiferromagnetic metal: tetragonal CuMnAs, and the corresponding conductivity can reach the order of mA/V$^2$ based on density functional theory calculations. The dependence on the chemical potential of such nonlinear Hall conductivity can be qualitatively explained by a tilted massive Dirac model. Moreover, we demonstrate its strong temperature-dependence and briefly discuss its competition with the second order Drude conductivity. Finally, a complete survey of magnetic point groups are presented, providing guidelines for finding candidate materials with the intrinsic nonlinear Hall effect.
The amorphous iron-germanium system ($a$-Fe$_x$Ge$_{1-x}$) lacks long-range structural order and hence lacks a meaningful Brillouin zone. The magnetization of aFeGe is well explained by the Stoner model for Fe concentrations $x$ above the onset of magnetic order around $x=0.4$, indicating that the local order of the amorphous structure preserves the spin-split density of states of the Fe-$3d$ states sufficiently to polarize the electronic structure despite $mathbf{k}$ being a bad quantum number. Measurements reveal an enhanced anomalous Hall resistivity $rho_{xy}^{mathrm{AH}}$ relative to crystalline FeGe; this $rho_{xy}^{mathrm{AH}}$ is compared to density functional theory calculations of the anomalous Hall conductivity to resolve its underlying mechanisms. The intrinsic mechanism, typically understood as the Berry curvature integrated over occupied $mathbf{k}$-states but shown here to be equivalent to the density of curvature integrated over occupied energies in aperiodic materials, dominates the anomalous Hall conductivity of $a$-Fe$_x$Ge$_{1-x}$ ($0.38 leq x leq 0.61$). The density of curvature is the sum of spin-orbit correlations of local orbital states and can hence be calculated with no reference to $mathbf{k}$-space. This result and the accompanying Stoner-like model for the intrinsic anomalous Hall conductivity establish a unified understanding of the underlying physics of the anomalous Hall effect in both crystalline and disordered systems.
We investigate the spin Hall effect (SHE) in a wide class of spin-orbit coupling systems by using spin force picture. We derive the general relation equation between spin force and spin current and show that the longitudinal force component can induce a spin Hall current, from which we reproduce the spin Hall conductivity obtained previously using Kubos formula. This simple spin force picture gives a clear and intuitive explanation for SHE.
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