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Register a new userCan freestanding Xene monolayers behave as excitonic insulators?
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We predict a phase transition in freestanding monolayer Xenes from the semiconducting phase to the excitonic insulating (EI) phase can be induced by reducing an external electric field below some critical value which is unique to each material. The splitting of the conduction and valence bands due to spin-orbit coupling at non-zero electric fields leads to the formation of $A$ and $B$ excitons in the larger or smaller band gap, with correspondingly larger or smaller binding energies. Our calculations show the coexistence of the semiconducting phase of $A$ excitons with the EI phase of $B$ excitons for a particular range of electric field. The dielectric environment precludes the existence of the EI phase in supported or encapsulated monolayer Xenes.
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We report a comprehensive study of the two-phonon inter-valley (2D) Raman mode in graphene monolayers, motivated by recent reports of asymmetric 2D-mode lineshapes in freestanding graphene. For photon energies in the range $1.53 rm eV - 2.71 rm eV$, the 2D-mode Raman response of freestanding samples appears as bimodal, in stark contrast with the Lorentzian approximation that is commonly used for supported monolayers. The transition between the freestanding and supported cases is mimicked by electrostatically doping freestanding graphene at carrier densities above $2times 10^{11} rm cm^{-2}$. This result quantitatively demonstrates that low levels of charging can obscure the intrinsically bimodal 2D-mode lineshape of monolayer graphene, which can be utilized as a signature of a quasi-neutral sample. In pristine freestanding graphene, we observe a broadening of the 2D-mode feature with decreasing photon energy that cannot be rationalized using a simple one-dimensional model based on resonant textit{inner} and textit{outer} processes. This indicates that phonon wavevectors away from the high-symmetry lines of the Brillouin zone must contribute to the 2D-mode, so that a full two-dimensional calculation is required to properly describe multiphonon-resonant Raman processes.
Two-dimensional (2D) Stiefel-Whitney insulator (SWI), which is characterized by the second Stiefel-Whitney class, is a new class of topological phases with zero Berry curvature. As a novel topological state, it has been well studied in theory but seldom realized in realistic materials. Here we propose that a large class of liganded Xenes, i.e., hydrogenated and halogenated 2D group-IV honeycomb lattices, are 2D SWIs. The nontrivial topology of liganded Xenes is identified by the bulk topological invariant and the existence of protected corner states. Moreover, the large and tunable band gap (up to 3.5 eV) of liganded Xenes will facilitate the experimental characterization of the 2D SWI phase. Our findings not only provide abundant realistic material candidates that are experimentally feasible, but also draw more fundamental research interest towards the topological physics associated with Stiefel-Whitney class in the absence of Berry curvature.
The reduced dielectric screening in atomically thin transition metal dichalcogenides allows to study the hydrogen-like series of higher exciton states in optical spectra even at room temperature. The width of excitonic peaks provides information about the radiative decay and phonon-assisted scattering channels limiting the lifetime of these quasi-particles. While linewidth studies so far have been limited to the exciton ground state, encapsulation with hBN has recently enabled quantitative measurements of the broadening of excited exciton resonances. Here, we present a joint experiment-theory study combining microscopic calculations with spectroscopic measurements on the intrinsic linewidth and lifetime of higher exciton states in hBN-encapsulated WSe$_2$ monolayers. Surprisingly, despite the increased number of scattering channels, we find both in theory and experiment that the linewidth of higher excitonic states is similar or even smaller compared to the ground state. Our microscopic calculations ascribe this behavior to a reduced exciton-phonon scattering efficiency for higher excitons due to spatially extended orbital functions.
We investigate the excitonic spectrum of MoS$_2$ monolayers and calculate its optical absorption properties over a wide range of energies. Our approach takes into account the anomalous screening in two dimensions and the presence of a substrate, both cast by a suitable effective Keldysh potential. We solve the Bethe-Salpeter equation using as a basis a Slater-Koster tight-binding model parameterized to fit ab initio MoS$_2$ band structure calculations. The resulting optical conductivity is in good quantitative agreement with existing measurements up to ultraviolet energies. We establish that the electronic contributions to the C excitons arise not from states in the vicinity of the $Gamma$ point, but from a set of $k$-points over extended portions of the Brillouin zone. Our results reinforce the advantages of approaches based on effective models to expeditiously explore the properties and tunability of excitons in TMD systems.
We study the effects of strong electron-electron interactions on the surface of cubic topological Kondo insulators (such as samarium hexaboride, SmB$_6$). Cubic topological Kondo insulators generally support three copies of massless Dirac nodes on the surface, but only two of them are energetically degenerate and exhibit an energy offset relative to the third one. With a tunable chemical potential, when the surface states host electron and hole pockets of comparable size, strong interactions may drive this system into rotational symmetry breaking nematic and translational symmetric breaking excitonic spin- or charge-density-wave phases, depending on the relative chirality of the Dirac cones. Taking a realistic surface band structure into account we analyze the associated Ginzburg-Landau theory and compute the mean field phase diagram for interacting surface states. Beyond mean field theory, this system can be described by a two-component isotropic Ashkin-Teller model at finite temperature, and we outline the phase diagram of this model. Our theory provides a possible explanation of recent measurements which detect a two-fold symmetric magnetoresistance and an upturn in surface resistivity with tunable gate voltage in SmB$_6$. Our discussion can also be germane to other cubic topological insulators, such as ytterbium hexaboride (YbB$_6$), plutonium hexaboride (PuB$_6$).
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