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Electron spins in silicon quantum dots provide a promising route towards realising the large number of coupled qubits required for a useful quantum processor. At present, the requisite single-shot spin qubit measurements are performed using on-chip charge sensors, capacitively coupled to the quantum dots. However, as the number of qubits is increased, this approach becomes impractical due to the footprint and complexity of the charge sensors, combined with the required proximity to the quantum dots. Alternatively, the spin state can be measured directly by detecting the complex impedance of spin-dependent electron tunnelling between quantum dots. This can be achieved using radio-frequency reflectometry on a single gate electrode defining the quantum dot itself, significantly reducing gate count and architectural complexity, but thus far it has not been possible to achieve single-shot spin readout using this technique. Here, we detect single electron tunnelling in a double quantum dot and demonstrate that gate-based sensing can be used to read out the electron spin state in a single shot, with an average readout fidelity of 73%. The result demonstrates a key step towards the readout of many spin qubits in parallel, using a compact gate design that will be needed for a large-scale semiconductor quantum processor.
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Determination of qubit initialisation and measurement fidelity is important for the overall performance of a quantum computer. However, the method by which it is calculated in semiconductor qubits varies between experiments. In this paper we present a full theoretical analysis of electronic single-shot readout and describe critical parameters to achieve high fidelity readout. In particular, we derive a model for energy selective state readout based on a charge detector response and examine how to optimise the fidelity by choosing correct experimental parameters. Although we focus on single electron spin readout, the theory presented can be applied to other electronic readout techniques in semiconductors that use a reservoir.
The silicon-vacancy ($mathrm{SiV}^-$) color center in diamond has attracted attention due to its unique optical properties. It exhibits spectral stability and indistinguishability that facilitate efficient generation of photons capable of demonstrating quantum interference. Here we show high fidelity optical initialization and readout of electronic spin in a single $mathrm{SiV}^-$ center with a spin relaxation time of $T_1=2.4pm0.2$ ms. Coherent population trapping (CPT) is used to demonstrate coherent preparation of dark superposition states with a spin coherence time of $T_2^star=35pm3$ ns. This is fundamentally limited by orbital relaxation, and an understanding of this process opens the way to extend coherences by engineering interactions with phonons. These results establish the $mathrm{SiV}^-$ center as a solid-state spin-photon interface.
We use the electronic spin of a single Nitrogen-Vacancy (NV) defect in diamond to observe the real-time evolution of neighboring single nuclear spins under ambient conditions. Using a diamond sample with a natural abundance of $^{13}$C isotopes, we first demonstrate high fidelity initialization and single-shot readout of an individual $^{13}$C nuclear spin. By including the intrinsic $^{14}$N nuclear spin of the NV defect in the quantum register, we then report the simultaneous observation of quantum jumps linked to both nuclear spin species, providing an efficient initialization of the two qubits. These results open up new avenues for diamond-based quantum information processing including active feedback in quantum error correction protocols and tests of quantum correlations with solid-state single spins at room temperature.
The efficient single photon emission capabilities of quantum dot molecules position them as promising platforms for quantum information processing. Furthermore, quantum dot molecules feature a decoherence-free subspace that enables spin qubits with long coherence time. To efficiently read out the spin state within this subspace requires optically cycling isolated transitions that originate from a triplet manifold within the quantum dot molecule. We propose and theoretically study a two-stage spin readout protocol within this decoherence-free subspace that allows single-shot readout performance. The process incorporates a microwave $pi$-pulse and optically cycling the isolated transitions, which induces fluorescence that allows us to identify the initial spin state. This protocol offers enhanced readout fidelity compared to previous schemes that rely on the excitation of transitions that strongly decay to multiple ground states or require long initialization via slow, optically forbidden transitions. By simulating the performance of the protocol, we show that an optimal spin readout fidelity of over 97% and single-shot readout performance are achievable for a photon collection efficiency of just 0.12%. This high readout performance for such realistic photon collection conditions within the decoherence-free subspace expands the potential of quantum dot molecules as building blocks for quantum networks.
Dopant atoms are ubiquitous in semiconductor technologies, providing the tailored electronic properties that underpin the modern digital information era. Harnessing the quantum nature of these atomic-scale objects represents a new and exciting technological revolution. In this article we describe the use of ion-implanted donor spins in silicon for quantum technologies. We review how to fabricate and operate single-atom spin qubits in silicon, obtaining some of the most coherent solid-state qubits, and we discuss pathways to scale up these qubits to build large quantum processors. Heavier group-V donors with large nuclear spins display electric quadrupole couplings that enable nuclear electric resonance, quantum chaos and strain sensing. Donor ensembles can be coupled to microwave cavities to develop hybrid quantum Turing machines. Counted, deterministic implantation of single donors, combined with novel methods for precision placement, will allow the integration of individual donors spins with industry-standard silicon fabrication processes, making implanted donors a prime physical platform for the second quantum revolution.
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