Do you want to publish a course? Click here

Nanowire lasers

119   0   0.0 ( 0 )
 Publication date 2018
  fields Physics
and research's language is English




Ask ChatGPT about the research

We review principles and trends in the use of semiconductor nanowires (NWs) as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as LEDs, solar cells, and transistors. Intensive research has also been conducted on the use of nanowires for sub-wavelength laser systems that take advantage of their quasi-one-dimensional nature, flexibility in material choice and combination, and intrinsic optoelectronic properties. First, we provide an overview on using quasi-one-dimensional nanowire systems to realize sub-wavelength lasers with efficient, directional, and low-threshold emission. We then describe the state-of-the-art for nanowire lasers in terms of materials, geometry, and wavelength tunability. Next, we present the basics of lasing in semiconductor nanowires, define the key parameters for stimulated emission, and introduce the properties of nanowires. We then review advanced nanowire laser designs from the literature. Finally, we present interesting perspectives for low-threshold nanoscale light sources and optical interconnects. We intend to illustrate the potential of nanolasers in many applications, such as nanophotonic devices that integrate electronics and photonics for next-generation optoelectronic devices. For instance, these building blocks for nanoscale photonics can be used for data storage and biomedical applications when coupled to on-chip characterization tools. These nanoscale monochromatic laser light sources promise breakthroughs in nanophotonics, as they can operate at room temperature, potentially be electrically driven, and yield a better understanding of intrinsic nanomaterial properties and surface state effects in low-dimensional semiconductor systems.



rate research

Read More

In contrast to conventional structures, efficient non-radiative carrier recombination counteracts the appearance of optical gain in graphene. Based on a microscopic and fully quantum-mechanical study of the coupled carrier, phonon, and photon dynamics in graphene, we present a strategy to obtain a long-lived gain: Integrating graphene into a photonic crystal nanocavity and applying a high-dielectric substrate gives rise to pronounced coherent light emission suggesting the design of graphene-based laser devices covering a broad spectral range.
Light management is of great importance to photovoltaic cells, as it determines the fraction of incident light entering the device. An optimal pn-junction combined with an optimal light absorption can lead to a solar cell efficiency above the Shockley-Queisser limit. Here, we show how this is possible by studying photocurrent generation for a single core-shell p-i-n junction GaAs nanowire solar cell grown on a silicon substrate. At one sun illumination a short circuit current of 180 mA/cm^2 is obtained, which is more than one order of magnitude higher than what would be predicted from Lambert-Beer law. The enhanced light absorption is shown to be due to a light concentrating property of the standing nanowire as shown by photocurrent maps of the device. The results imply new limits for the maximum efficiency obtainable with III-V based nanowire solar cells under one sun illumination.
We reveal and study the topological transition in a metamaterial formed by parallel nanowires of polaritonic material. When the dispersion transits from the elliptic (epsilon-positive) to hyperbolic (epsilon-indefinite) regime, a very specific isofrequency surface arises which implies an extraordinary Purcell factor in spite of noticeable optical losses.
We present an ultrafast all-optical gated amplifier, or transistor, consisting of a forest of ZnO nanowire lasers. A gate light pulse creates a dense electron-hole plasma and excites laser action inside the nanowires. Source light traversing the nanolaser forest is amplified, partly as it is guided through the nanowires, and partly as it propagates diffusively through the forest. We have measured transmission increases at the drain up to a factor 34 for 385-nm light. Time-resolved amplification measurements show that the lasing is rapidly self-quenching, yielding pulse responses as short as 1.2 ps.
Resonant phonon depopulation terahertz quantum cascade lasers based on vertical and diagonal lasing transitions are systematically compared using a well established ensemble Monte Carlo approach. The analysis shows that for operating temperatures below 200 K, diagonal designs may offer superior temperature performance at lasing frequencies of about 3.5 THz and above; however, vertical structures are more advantageous for good temperature performance at lower frequencies.
comments
Fetching comments Fetching comments
Sign in to be able to follow your search criteria
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا