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Register a new userMetallic glasses for spintronics: anomalous temperature dependence and giant enhancement of inverse spin Hall effect
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Spin-charge conversion via inverse spin Hall effect (ISHE) is essential for enabling various applications of spintronics. The spin Hall response usually follows a universal scaling relation with longitudinal electric resistivity and has mild temperature dependence because elementary excitations play only a minor role in resistivity and hence ISHE. Here we report that the ISHE of metallic glasses shows nearly two orders of magnitude enhancements with temperature increase from a threshold of 80-100 K to glass transition points. As electric resistivity changes only marginally in the temperature range, the anomalous temperature dependence is in defiance of the prevailing scaling law. Such a giant temperature enhancement can be well described by a two-level thermal excitation model of glasses and disappears after crystallization, suggesting a new mechanism which involves unique thermal excitations of glasses. This finding may pave new ways to achieve high spin-charge conversion efficiency at room and higher temperatures for spintronic devices and to detect structure and dynamics of glasses using spin currents.
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The origin of anomalous Hall effect (AHE) in ferromagnetic metallic glasses (MGs) is not yet understood completely. Here, the AHE is explored in Fe78Si9B13 MGs. We find the behavior of resistivity at low temperature seems to be more likely due to structure effect rather than Kondo-type effect. More importantly, we firstly find the primitive experiment anomalous Hall conductivity ({sigma}AH) without separation of extrinsic contribution has a linear magnetization (Mz) dependence when temperature is changing, which is another feature of intrinsic mechanism and indicates intrinsic contribution is dominated. Furthermore, the {sigma}AH normalized by Mz is independent of longitudinal conductivity ({sigma}xx), which shows the characteristic of dissipationless intrinsic mechanism. We suggest the intrinsic contribution can be understood from the density of Berry curvature integrated over occupied energies proposed for aperiodic materials recently, and the linear magnetization dependence can be understood qualitatively from the fluctuations of spin orientation and the proportional relationship between Berry curvature and magnetization. Moreover, based on the recent theory report of topological amorphous metals, we make a prediction that the large intrinsic {sigma}AH (616 S/cm) in Fe78Si9B13 MGs implies some topological properties of MGs waiting for further discovery.
The low-temperature Hall resistivity rho_{xy} of La_{2/3}A_{1/3}MnO_3 single crystals (where A stands for Ca, Pb and Ca, or Sr) can be separated into Ordinary and Anomalous contributions, giving rise to Ordinary and Anomalous Hall effects, respectively. However, no such decomposition is possible near the Curie temperature which, in these systems, is close to metal-to-insulator transition. Rather, for all of these compounds and to a good approximation, the rho_{xy} data at various temperatures and magnetic fields collapse (up to an overall scale), on to a single function of the reduced magnetization m=M/M_{sat}, the extremum of this function lying at m~0.4. A new mechanism for the Anomalous Hall Effect in the inelastic hopping regime, which reproduces these scaling curves, is identified. This mechanism, which is an extension of Holsteins model for the Ordinary Hall effect in the hopping regime, arises from the combined effects of the double-exchange-induced quantal phase in triads of Mn ions and spin-orbit interactions. We identify processes that lead to the Anomalous Hall Effect for localized carriers and, along the way, analyze issues of quantum interference in the presence of phonon-assisted hopping. Our results suggest that, near the ferromagnet-to-paramagnet transition, it is appropriate to describe transport in manganites in terms of carrier hopping between states that are localized due to combined effect of magnetic and non-magnetic disorder. We attribute the qualitative variations in resistivity characteristics across manganite compounds to the differing strengths of their carrier self-trapping, and conclude that both disorder-induced localization and self-trapping effects are important for transport.
In this communication, we numerically studied disordered quantum transport in a quantum anomalous Hall insulator-superconductor junction based on the effective edge model approach. In particular, we focus on the parameter regime with the free mean path due to elastic scattering much smaller than the sample size and discuss disordered transport behaviors in the presence of different numbers of chiral edge modes, as well as non-chiral metallic modes. Our numerical results demonstrate that the presence of multiple chiral edge modes or non-chiral metallic modes will lead to a strong Andreev conversion, giving rise to half-electron half-hole transmission through the junction structure, in sharp contrast to the suppression of Andreev conversion in the single chiral edge mode case. Our results suggest the importance of additional transport modes in the quantum anomalous Hall insulator-superconductor junction and will guide the future transport measurements.
The design of multi-functional BMGs is limited by the lack of a quantitative understanding of the variables that control the glass-forming ability (GFA) of alloys. Both geometric frustration (e.g. differences in atomic radii) and energetic frustration (e.g. differences in the cohesive energies of the atomic species) contribute to the GFA. We perform molecular dynamics simulations of binary Lennard-Jones mixtures with only energetic frustration. We show that there is little correlation between the heat of mixing and critical cooling rate $R_c$, below which the system crystallizes, except that $Delta H_{rm mix} < 0$. By removing the effects of geometric frustration, we show strong correlations between $R_c$ and the variables $epsilon_- = (epsilon_{BB}-epsilon_{AA})/(epsilon_{AA}+epsilon_{BB})$ and ${overline epsilon}_{AB} = 2epsilon_{AB}/(epsilon_{AA}+epsilon_{BB})$, where $epsilon_{AA}$ and $epsilon_{BB}$ are the cohesive energies of atoms $A$ and $B$ and $epsilon_{AB}$ is the pair interaction between $A$ and $B$ atoms. We identify a particular $f_B$-dependent combination of $epsilon_-$ and ${overline epsilon}_{AB}$ that collapses the data for $R_c$ over nearly $4$ orders of magnitude in cooling rate.
We have measured the inverse spin Hall effect (ISHE) in textit{n}-Ge at room temperature. The spin current in germanium was generated by spin pumping from a CoFeB/MgO magnetic tunnel junction in order to prevent the impedance mismatch issue. A clear electromotive force was measured in Ge at the ferromagnetic resonance of CoFeB. The same study was then carried out on several test samples, in particular we have investigated the influence of the MgO tunnel barrier and sample annealing on the ISHE signal. First, the reference CoFeB/MgO bilayer grown on SiO$_{2}$ exhibits a clear electromotive force due to anisotropic magnetoresistance and anomalous Hall effect which is dominated by an asymmetric contribution with respect to the resonance field. We also found that the MgO tunnel barrier is essential to observe ISHE in Ge and that sample annealing systematically lead to an increase of the signal. We propose a theoretical model based on the presence of localized states at the interface between the MgO tunnel barrier and Ge to account for these observations. Finally, all of our results are fully consistent with the observation of ISHE in heavily doped $n$-Ge and we could estimate the spin Hall angle at room temperature to be $approx$0.001.
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