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Register a new userMechanism of substrate-induced anisotropic growth of monolayer WS2 by kinetic Monte Carlo simulations
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Controlled anisotropic growth of two-dimensional materials provides an approach for the synthesis of large single crystals and nanoribbons, which are promising for applications as low-dimensional semiconductors and in next-generation optoelectronic devices. In particular, the anisotropic growth of transition metal dichalcogenides induced by the substrate is of great interest due to its operability. To date, however, their substrate-induced anisotropic growth is typically driven by the optimization of experimental parameters without uncovering the fundamental mechanism. Here, the anisotropic growth of monolayer tungsten disulfide on an ST-X quartz substrate is achieved by chemical vapor deposition, and the mechanism of substrate-induced anisotropic growth is examined by kinetic Monte Carlo simulations. These results show that, besides the variation of substrate adsorption, the chalcogen to metal (C/M) ratio is a major contributor to the large growth anisotropy and the polarization of undergrowth and overgrowth; either perfect isotropy or high anisotropy can be expected when the C/M ratio equals 2.0 by properly controlling the linear relationship between gas flux and temperature.
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High-temperature, high-dose, neutron irradiation of W results in the formation of Re-rich clusters at concentrations one order of magnitude lower than the thermodynamic solubility limit. These clusters may eventually transform into brittle W-Re intermetallic phases, which can lead to high levels of hardening and thermal conductivity losses. Standard theories of radiation enhanced diffusion and precipitation cannot explain the formation of these precipitates and so understanding the mechanism by which nonequilibrium clusters form under irradiation is crucial to predict materials degradation and devise mitigation strategies. Here we carry out a thermodynamic study of W-Re alloys and conduct kinetic Monte Carlo simulations of Re cluster formation in irradiated W-2Re alloys using a generalized Hamiltonian for crystals containing point defects parameterized entirely with electronic structure calculations. Our model incorporates recently-gained mechanistic information of mixed-interstitial solute transport, which is seen to control cluster nucleation and growth by forming quasi-spherical nuclei after an average incubation time of 20 s at 1800 K. These nuclei are seen to grow by attracting more mixed interstitials bringing solute atoms, which in turns attracts vacancies leading to recombination and solute agglomeration. The clusters grow to a maximum size of approximately 4-nm radius, and are not fully dense with Re, containing 50% or less near the center. Our simulations are in reasonable agreement with recent atom probe examinations of ion irradiated W-2Re systems at 773 K.
We describe the development of a new object kinetic Monte Carlo code where the elementary defect objects are off-lattice atomistic configurations. Atomic-level transitions are used to transform and translate objects, to split objects and to merge them together. This gradually constructs a database of atomic configurations -- a set of relevant defect objects and their possible events generated on-the-fly. Elastic interactions are handled within objects with empirical potentials at short distances, and between spatially distinct objects using the dipole tensor formalism. The model is shown to evolve mobile interstitial clusters in tungsten faster than an equivalent molecular dynamics simulation, even at elevated temperatures. We apply the model to the evolution of complex defects generated using molecular dynamics simulations of primary radiation damage in tungsten. We show that we can evolve defect structures formed in cascade simulations to experimentally observable timescales of seconds while retaining atomistic detail. We conclude that the first few nanoseconds of simulation following cascade initiation would be better performed using molecular dynamics, as this will capture some of the near-temperature-independent evolution of small highly-mobile interstitial clusters. We also conclude that, for the 20keV PKA cascades annealing simulations considered here, internal relaxations of sessile objects difficult to capture using conventional object KMC with idealised object geometries establish the conditions for long timescale evolution.
We introduce an algorithm for treating growth on surfaces which combines important features of continuum methods (such as the level-set method) and Kinetic Monte Carlo (KMC) simulations. We treat the motion of adatoms in continuum theory, but attach them to islands one atom at a time. The technique is borrowed from the Dielectric Breakdown Model. Our method allows us to give a realistic account of fluctuations in island shape, which is lacking in deterministic continuum treatments and which is an important physical effect. Our method should be most important for problems close to equilibrium where KMC becomes impractically slow.
A Kinetic Monte Carlo model that simulates the growth of thin films under conditions typically encountered in plasma enhanced chemical vapor deposition experiments is presented. The model is intended to reproduce the growth of two different types of materials (amorphous nanocolumnar and anisotropic-polycrystalline) in a coarse-grained fashion. In order to show the advantages and limitations of the model, the microstructure, texture, and scaling properties of TiO2 and ZnO thin-film growth are obtained under several growth conditions and compared with available experimental data obtained by X-Ray Diffraction, analysis of texture coefficients, Atomic Force Microscopy and Scanning Electron Microscopy.
A growth model and parameters obtained in our previous experimental (scanning tunneling microscopy, KMC) and theoretical (kinetic Monte Carlo simulations, KMC) studies of Ag/Si(111)-(7x7) heteroepitaxy were used to optimise growth conditions (temperature and deposition rate) for the most ordered self-organized growth of Ag island arrays on the (7x7) reconstructed surface. The conditions were estimated by means of KMC simulations using the preference in occupation of half unit cells (HUCs) of F-type as a criterion of island ordering. Morphology of experimentally prepared island structures was studied by STM. High degree of experimentally obtained island ordering is compared with the simulated data and results are discussed with respect to the model and parameters used at the KMC simulations.
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