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Register a new userField-free spin-orbit torque switching from geometrical domain wall pinning
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Spin-orbit torques, which utilize spin currents arising from the spin-orbit coupling, offer a novel method to electrically switch the magnetization with perpendicular anisotropy. However, the necessity of an external magnetic field to achieve a deterministic switching is an obstacle for realizing practical spin-orbit torque devices with all-electric operation. Here, we report a field-free spin-orbit torque switching by exploiting the domain wall motion in an anti-notched microwire with perpendicular anisotropy, which exhibits multi-domain states stabilized by the domain wall surface tension. The combination of spin-orbit torque, Dzyaloshinskii-Moriya interaction, and domain wall surface tension induced geometrical pinning allows a deterministic control of the domain wall and offers a novel method to achieve a field-free spin-orbit torque switching. Our work demonstrates the proof of concept of a perpendicular memory cell which can be readily adopted in a three-terminal magnetic memory.
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Spin-orbit torques (SOT) allow the electrical control of magnetic states. Current-induced SOT switching of the perpendicular magnetization is of particular technological importance. The SOT consists of damping-like and field-like torques so that the efficient SOT switching requires to understand combined effects of the two torque-components. Previous quasi-static measurements have reported an increased switching probability with the width of current pulses, as predicted with considering the damping-like torque only. Here we report a decreased switching probability at longer pulse-widths, based on time-resolved measurements. Micromagnetic analysis reveals that this anomalous SOT switching results from domain wall reflections at sample edges. The domain wall reflection is found to strongly depend on the field-like torque and its relative sign to the damping-like torque. Our result demonstrates a key role of the field-like torque in the deterministic SOT switching and notifies the importance of sign correlation of the two torque-components, which may shed light on the SOT switching mechanism.
The motion of a domain wall in a two dimensional medium is studied taking into account the internal elastic degrees of freedom of the wall and geometrical pinning produced both by holes and sample boundaries. This study is used to analyze the geometrical conditions needed for optimizing crossed ratchet effects in periodic rectangular arrays of asymmetric holes, recently observed experimentally in patterned ferromagnetic films. Geometrical calculations and numerical simulations have been used to obtain the anisotropic critical fields for depinning flat and kinked walls in rectangular arrays of triangles. The aim is to show with a generic elastic model for interfaces how to build a rectifier able to display crossed ratchet effects or effective potential landscapes for controlling the motion of interfaces or invasion fronts.
We demonstrate from both simulation and experiment a simple scheme for selective injection of multiple domain walls in a magnetic nanowire. The structure consists of a side-contact misaligned Hall bar made of ferromagnet/heavy metal bilayers. The combination of current-induced spin-orbit torque and an external magnetic field allows for the formation of localized domains with specific magnetization direction and length, thereby creating domain walls in predetermined locations. With the side contacts at two sides misaligned for a distance that is comparable to the contact width, it is possible to create densely packed domains by simply applying current between different pairs of side contacts. Simulation results show that the proposed scheme is scalable to a large number of domains with its dimension limited only by the domain wall width.
Deterministic magnetization switching using spin-orbit torque (SOT) has recently emerged as an efficient means to electrically control the magnetic state of ultrathin magnets. The SOT switching still lacks in oscillatory switching characteristics over time, therefore, it is limited to bipolar operation where a change in polarity of the applied current or field is required for bistable switching. The coherent rotation based oscillatory switching schemes cannot be applied to SOT because the SOT switching occurs through expansion of magnetic domains. Here, we experimentally achieve oscillatory switching in incoherent SOT process by controlling domain wall dynamics. We find that a large field-like component can dynamically influence the domain wall chirality which determines the direction of SOT switching. Consequently, under nanosecond current pulses, the magnetization switches alternatively between the two stable states. By utilizing this oscillatory switching behavior we demonstrate a unipolar deterministic SOT switching scheme by controlling the current pulse duration.
We proposed and demonstrated a simple method for detection of in-plane magnetization switching by spin-orbit torque (SOT) in bilayers of non-magnetic / magnetic materials. In our method, SOT is used not only for magnetization switching but also for detection. Our method can detect arbitrary Mx and My component without an external magnetic field, which is useful for fast characterization of type-X, type-Y, and type-XY SOT magnetization switching. Our SOT detection scheme can be utilized not only for fast characterization of SOT switching in bilayers, but also for electrical detection of in-plane magnetic domains in race-track memory.
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