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Register a new userSpin-orbit interaction in Pt or Bi2Te3 nanoparticle-decorated graphene realized by a nanoneedle method
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The introduction of spin-orbit interactions (SOIs) and the subsequent appearance of a two-dimensional (2D) topological phase are crucial for voltage-controlled and zero-emission energy spintronic devices. In contrast, graphene basically lacks SOIs due to the small mass of the carbon atom, and appropriate experimental reports for SOIs are rare. Here, we control small-amount (cover ratios < 8%) random decoration of heavy nanoparticles [platinum (Pt) or bismuth telluride (Bi2Te3)] onto mono-layer graphene by developing an original nanoneedle method. X-ray photoelectron spectra support low-damage and low-contamination decoration of the nanoparticles, suggesting the presence of Bi-C and Te-C coupling orbitals. In the samples, we find particle-density-dependent non-local resistance (RNL) peaks, which are attributed to the (inverse) spin Hall effect (SHE) arising from SOI with energies as large as about 30 meV. This is a larger value than in previous reports and supported by scanning tunneling spectroscopy. The present observation should lead to topological phases of graphene, which can be introduced by random decoration with controlled small amounts of heavy nanoparticles, and their applications.
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Realization of the quantum-spin-Hall effect in graphene devices has remained an outstanding challenge dating back to the inception of the field of topological insulators. Graphenes exceptionally weak spin-orbit coupling -stemming from carbons low mass- poses the primary obstacle. We experimentally and theoretically study artificially enhanced spin-orbit coupling in graphene via random decoration with dilute Bi2Te3 nanoparticles. Remarkably, multi-terminal resistance measurements suggest the presence of helical edge states characteristic of a quantum-spin-Hall phase; the magnetic-field and temperature dependence of the resistance peaks, X-ray photoelectron spectra, scanning tunneling spectroscopy, and first-principles calculations further support this scenario. These observations highlight a pathway to spintronics and quantum-information applications in graphene-based quantum-spin-Hall platforms.
We report a systematic study on strong enhancement of spin-orbit interaction (SOI) in graphene driven by transition-metal dichalcogenides (TMDs). Low temperature magnetotoransport measurements of graphene proximitized to different TMDs (monolayer and bulk WSe$_2$, WS$_2$ and monolayer MoS$_2$) all exhibit weak antilocalization peaks, a signature of strong SOI induced in graphene. The amplitudes of the induced SOI are different for different materials and thickness, and we find that monolayer WSe$_2$ and WS$_2$ can induce much stronger SOI than bulk ones and also monolayer MoS$_2$. The estimated spin-orbit (SO) scattering strength for the former reaches $sim$ 10 meV whereas for the latter it is around 1 meV or less. We also discuss the symmetry and type of the induced SOI in detail, especially focusing on the identification of intrinsic and valley-Zeeman (VZ) SOI via the dominant spin relaxation mechanism. Our findings offer insight on the possible realization of the quantum spin Hall (QSH) state in graphene.
The concept of gauge fields plays a significant role in many areas of physics from particle physics and cosmology to condensed matter systems, where gauge potentials are a natural consequence of electromagnetic fields acting on charged particles and are of central importance in topological states of matter. Here, we report on the experimental realization of a synthetic non-Abelian gauge field for photons in a honeycomb microcavity lattice. We show that the effective magnetic field associated with TE-TM splitting has the symmetry of Dresselhaus spin-orbit interaction around Dirac points in the dispersion, and can be regarded as an SU(2) gauge field. The symmetry of the field is revealed in the optical spin Hall effect (OSHE), where under resonant excitation of the Dirac points precession of the photon pseudospin around the field direction leads to the formation of two spin domains. Furthermore, we observe that the Dresselhaus field changes its sign in the same Dirac valley on switching from s to p bands in good agreement with the tight binding modelling. Our work demonstrating a non-Abelian gauge field for light on the microscale paves the way towards manipulation of photons via spin on a chip.
We measure spin-orbit torques (SOTs) in a unique model system of all-epitaxial ferrite/Pt bilayers to gain insights into charge-spin interconversion in Pt. With negligible electronic conduction in the insulating ferrite, the crystalline Pt film acts as the sole source of charge-to-spin conversion. A small field-like SOT independent of Pt thickness suggests a weak Rashba-Edelstein effect at the ferrite/Pt interface. By contrast, we observe a sizable damping-like SOT that depends on the Pt thickness, from which we deduce the dominance of an extrinsic spin-Hall effect (skew scattering) and Dyakonov-Perel spin relaxation in the crystalline Pt film. Furthermore, our results point to a large internal spin-Hall ratio of $approx$0.8 in epitaxial Pt. Our experimental work takes an essential step towards understanding the mechanisms of charge-spin interconversion and SOTs in Pt-based heterostructures, which are crucial for power-efficient spintronic devices.
Introduction of spin-orbit interaction (SOI) into graphene with weak hydrogenation ($sim$0.1%) by dissociation of hydrogen silsesquioxane resist has been confirmed through the appearance of inverse spin Hall effect. The spin current was produced by spin injection from permalloy electrodes excluding non-spin relating experimental artifact.
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