No Arabic abstract
Our detailed Angle Resolved Photoemission Spectroscopy (ARPES) study of $2H$-TaS$_2$, a canonical incommensurate charge density wave (CDW) material, illustrates pronounced many-body renormalization in the system, which is manifested by the presence of multiple kink structures in the electronic dispersions. Temperature-dependent measurements reveal that these kink structures persist even at temperatures higher than the charge density wave transition temperature $it{T}_{text{cdw}},$ and the energy locations of the kinks are practically temperature-independent. Correlating kink energies with the published Raman scattering data and the theoretically calculated phonon spectrum of $2H$-TaS$_2$, we conclude phononic mechanism for these kinks. We have also detected momentum-anisotropy in the band renormalization, which in turn indicates momentum-dependence of the electron-phonon coupling of the system.
We report high-resolution inelastic x-ray measurements of the soft phonon mode in the charge-density-wave compound TiSe$_2$. We observe a complete softening of a transverse optic phonon at the L point, i.e. q = (0.5, 0, 0.5), at T ~ T_{CDW}. Renormalized phonon energies are observed over a large wavevector range $(0.3, 0, 0.5) le mathbf{q} le (0.5, 0, 0.5)$. Detailed ab-initio calculations for the electronic and lattice dynamical properties of TiSe2 are in quantitative agreement with experimental frequencies for the phonon branch involving the soft mode. The observed broad range of renormalized phonon frequencies is directly related to a broad peak in the electronic susceptibility stabilizing the charge-density-wave ordered state. Our analysis demonstrates that a conventional electron-phonon coupling mechanism can explain a structural instability and the charge-density-wave order in TiSe_2 although other mechanisms might further boost the transition temperature.
We investigate the electronic structure of the 2H and 3R polytypes of NbS$_2$. The Fermi surfaces measured by angle-resolved photoemission spectroscopy show a remarkable difference in size, reflecting a significantly increased band filling in 3R-Nb$_{1+x}$S$_2$ compared to 2H-NbS$_2$, which we attribute to the presence of additional interstitial Nb which act as electron donors. Thus we find that the stoichiometry, rather than the stacking arrangement, is the most important factor in the difference in electronic and physical properties of the two phases. Our high resolution data on the 2H phase shows kinks in the spectral function that are fingerprints of the electron-phonon coupling. However, the strength of the coupling is found to be much larger for the the sections of bands with Nb 4$d_{x^2-y^2,xy}$ character than for the Nb 4$d_{3z^2-r^2}$. Our results provide an experimental framework for interpreting the two-gap superconductivity and latent charge density wave in 2H-NbS$_2$.
Using time- and angle-resolved photoemission spectroscopy, we study the response of metallic single layer TaS$_2$ in the 1H structural modification to the generation of excited carriers by a femtosecond laser pulse. A complex interplay of band structure modifications and electronic temperature increase is observed and analyzed by direct fits of model spectral functions to the two-dimensional (energy and $k$-dependent) photoemission data. Upon excitation, the partially occupied valence band is found to shift to higher binding energies by up to 150 meV, accompanied by electronic temperatures exceeding 3000~K. These observations are explained by a combination of temperature-induced shifts of the chemical potential, as well as temperature-induced changes in static screening. Both contributions are evaluated in a semi-empirical tight-binding model. The shift resulting from a change in the chemical potential is found to be dominant.
The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single layer transition metal dichalchogenides such as MoS$_2$ or WS$_2$. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin. Here, the electron-phonon coupling in the valence band maximum of single-layer WS$_2$ is studied by first principles calculations and angle-resolved photoemission. The coupling strength is found to be drastically different for the two spin-split branches, with calculated values of $lambda_K=$0.0021 and 0.40 for the upper and lower spin-split valence band of the free-standing layer, respectively. This difference is somewhat reduced when including scattering processes involving the Au(111) substrate present in the experiment and the experimental results confirm the strongly branch-dependent coupling strength.
Understanding the physics of strongly correlated electronic systems has been a central issue in condensed matter physics for decades. In transition metal oxides, strong correlations characteristic of narrow $d$ bands is at the origin of such remarkable properties as the Mott gap opening, enhanced effective mass, and anomalous vibronic coupling, to mention a few. SrVO$_3$, with V$^{4+}$ in a $3d^1$ electronic configuration is the simplest example of a 3D correlated metallic electronic system. Here, we focus on the observation of a (roughly) quadratic temperature dependence of the inverse electron mobility of this seemingly simple system, which is an intriguing property shared by other metallic oxides. The systematic analysis of electronic transport in SrVO$_3$ thin films discloses the limitations of the simplest picture of e-e correlations in a Fermi liquid; instead, we show that the quasi-2D topology of the Fermi surface and a strong electron-phonon coupling, contributing to dress carriers with a phonon cloud, play a pivotal role on the reported electron spectroscopic, optical, thermodynamic and transport data. The picture that emerges is not restricted to SrVO$_3$ but can be shared with other $3d$ and $4d$ metallic oxides.