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Register a new userSize and shape of skyrmions for variable Dzyaloshinskii-Moriya interaction and uniaxial anisotropy
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We have performed micromagnetic simulations to study the formation of skyrmions in ferromagnetic elements with different shapes having perpendicular anisotropy. The strength of Dzyaloshinskii-Moriya interaction (D) and uniaxial anisotropy (K) are varied to elucidate the regime in which skyrmion formation can take place. It is found that for a certain combination of D and K skyrmion formation does not happen. Further we also observed that for large D and small K values, finite size effect dominates which in turn hinders formation of typical Neel (spherical) skyrmions. However the resulting magnetic phase is skyrmionic in nature and has different shape. We also have found that the shape of the magnetic nano element has a significant role in determining the final magnetic state in addition to the competing D and K values.
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We study theoretically, via Monte Carlo simulations on lattices containing up to 1000 x 1000 spins, thermal creation of skyrmion lattices in a 2D ferromagnetic film with perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction. At zero temperature, skyrmions only appear in the magnetization process in the presence of static disorder. Thermal fluctuations violate conservation of the topological charge and reduce the effective magnetic anisotropy that tends to suppress skyrmions. In accordance with recent experiments, we find that elevated temperatures assist the formation of skyrmion structures. Once such a structure is formed, it can be frozen into a regular skyrmion lattice by reducing the temperature. We investigate topological properties of skyrmion structures and find the average skyrmion size. Energies of domain and skyrmion states are computed. It is shown that skyrmion lattices have lower energy than labyrinth domains within a narrow field range.
Magnetic skyrmions in chiral-lattice ferromagnets are currently attracting enormous research interest because of their potential applications in spintronic devices. However, they emerge in bulk specimens only in a narrow window of temperature and magnetic field. This limited stability regime is recognized as an obstacle to technical applications. Recent experiments demonstrated that the thermodynamic stability of magnetic skyrmions is enhanced or suppressed by the application of a uniaxial strain depending on its axial direction in bulk chiral-lattice ferromagnets MnSi [Y. Nii et al., Nat. Commun. 6, 8539 (2015), A. Chacon et al., Phys. Rev. Lett. 115, 267202 (2015)] and Cu2OSeO3 [S. Seki et al., Phys. Rev. B 96, 220404(R) (2017)]. Motivated by these experimental discoveries, we theoretically investigated the effects of anisotropic Dzyaloshinskii--Moriya interactions on the stability of magnetic skyrmions caused by this uniaxial strain. We find that magnetic skyrmions are significantly stabilized (destabilized) in the presence of anisotropic DM interactions when an external magnetic field lies perpendicular (parallel) to the anisotropy axis, along which the DM coupling is strengthened. Our results account completely for the experimentally observed strain-induced stabilization and destabilization of magnetic skyrmions and provide a firm ground for possible strain engineering of skyrmion-based electronic devices.
The potential for application of magnetic skyrmions in high density storage devices provides a strong drive to investigate and exploit their stability and manipulability. Through a three-dimensional micromagnetic hysteresis study, we investigate the question of existence of skyrmions in cylindrical nanostructures of variable thickness. We quantify the applied field and thickness dependence of skyrmion states, and show that these states can be accessed through relevant practical hysteresis loop measurement protocols. As skyrmionic states have yet to be observed experimentally in confined helimagnetic geometries, our work opens prospects for developing viable hysteresis process-based methodologies to access and observe skyrmionic states.
We report current-induced domain wall motion (CIDWM) in TaCo20Fe60B20MgO nanowires. Domain walls are observed to move against the electron flow when no magnetic field is applied, while a field along the nanowires strongly affects the domain wall motion direction and velocity. A symmetric effect is observed for up-down and down-up domain walls. This indicates the presence of right-handed domain walls, due to a Dzyaloshinskii-Moriya interaction (DMI) with a DMI coefficient D=+0.06 mJ/m2. The positive DMI coefficient is interpreted to be a consequence of boron diffusion into the tantalum buffer layer during annealing. In a PtCo68Fe22B10MgO nanowire CIDWM along the electron flow was observed, corroborating this interpretation. The experimental results are compared to 1D-model simulations including the effects of pinning. This advanced modelling allows us to reproduce the experiment outcomes and reliably extract a spin-Hall angle {theta}SH=-0.11 for Ta in the nanowires, showing the importance of an analysis that goes beyond the currently used model for perfect nanowires.
Based on the micromagnetic simulations the magnetization switching in a triangle magnetic element by voltage-control of magnetic anisotropy and Dzyaloshinskii-Moriya interaction under in-plane magnetic field is proposed. The proposed switching scheme is not the toggle switching but the deterministic switching where the magnetic state is determined by the polarity of the applied voltage pulse. The mechanism and conditions for the switching are clarified. The results provide a fast and low-power writing method for magnetoresistive random access memories.
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