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Register a new userProbing Magnetic Sublattices in Multiferroic Ho$_{0.5}$Nd$_{0.5}$Fe$_{3}$(BO$_{3}$)$_{4}$ Single Crystal using X-ray Magnetic Circular Dichroism
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Using element-specific X-ray magnetic circular dichroism (XMCD) technique we have studied different magnetic sublattices in a multiferroic Ho$_{0.5}$Nd$_{0.5}$Fe$_{3}$(BO$_{3}$)$_{4}$ single crystal. The XMCD measurements at the emph{L}$_{2,3}$-edges of Ho and Nd, and at the Fe emph{K}-edge have been performed at emph{T}=2~K under a magnetic field up to 17~T applied along the trigonal emph{c}-axis as well as in the basal emph{ab}-plane. All three magnetic sublattices are shown to undergo a spin-reorientation transition under magnetic field applied along the emph{c}-axis. On the contrary, when magnetic field is applied in the emph{ab}-plane only the holmium atoms exhibit a magnetization jump. Thus, the element-specific magnetization curves revealed the Ho sublattice to be much stronger coupled to the Fe one than the Nd sublattice. The results demonstrate that the Ho$^{3+}$ subsystem plays even more dominant role in magnetic behavior of Ho$_{0.5}$Nd$_{0.5}$Fe$_{3}$(BO$_{3}$)$_{4}$ crystal than in pure HoFe$_{3}$(BO$_{3}$)$_{4}$ crystal.
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The electric-field control of $d$-electron magnetism in multiferroic transition metal oxides is attracting widespread interest for the underlying fundamental physics and for next generation spintronic devices. Here, we report an extensive study of the $3d$ magnetism in magnetoelectric Ga$_{0.6}$Fe$_{1.4}$O$_3$ (GFO) epitaxial films by polarization dependent x-ray absorption spectroscopy. We found a non-zero integral of the x-ray magnetic circular dichroism, with a sign depending upon the relative orientation between the external magnetic field and the crystallographic axes. %By reliably enlarging the limit of the spin and orbital sum rules, which usually holds for materials where the magnetic ions exhibit a unique crystal field symmetry This finding translates in a sign-reversal between the average Fe magnetic orbital and spin moments. Large Fe-displacements, among some of the octahedral sites, lower the symmetry of the system producing anisotropic paths for the Fe-O bondings giving rise to a large orbital-lattice interaction akin to a preferential crystallographic direction for the magnetic orbital moment. The latter may lead to a partial re-orientation of the magnetic orbital moment under an external magnetic field that, combined to the ferrimagnetic nature of the GFO, can qualitatively explain the observed sign-reversal of the XMCD integral. The results suggest that a control over the local symmetry of the oxygen octahedra in transition metal oxides can offer a suitable leverage over the manipulation of the effective orbital and spin moments in magnetoelectric systems.
We performed inelastic neutron scattering measurements on single crystals of NdFe$_{3}$($^{11}$BO$_{3}$)$_{4}$ to explore the magnetic excitations, to establish the underlying Hamiltonian, and to reveal the detailed nature of hybridization between the 4$f$ and 3$d$ magnetism. The observed spectra exhibiting a couple of key features, i.e., anti-crossing of Nd- and Fe-excitations and anisotropy gap at the antiferromagnetic zone center, are explained by the magnetic model including spin interaction in the framework of weakly-coupled Fe$^{3+}$ chains, interaction between the Fe$^{3+}$ and Nd$^{3+}$ moments, and single-ion anisotropy derived from Nd$^{3+}$ crystal field. The combination of the measurements and calculations reveals that the hybridization between 4$f$ and 3$d$ magnetism propagates the local magnetic anisotropy of the Nd$^{3+}$ ion to the Fe$^{3+}$ network, resulting in the bulk structure of multiferroics.
Fe-doped III-V ferromagnetic semiconductors (FMSs) such as (In,Fe)As, (Ga,Fe)Sb, (In,Fe)Sb, and (Al,Fe)Sb are promising materials for spintronic device applications because of the availability of both n- and p-type materials and the high Curie temperatures. On the other hand, (Ga,Fe)As, which has the same zinc-blende crystal structure as the Fe-doped III-V FMSs, shows paramagnetism. The origin of the different magnetic properties in the Fe-doped III-V semiconductors remains to be elucidated. To address this issue, we use resonant photoemission spectroscopy (RPES) and x-ray magnetic circular dichroism (XMCD) to investigate the electronic and magnetic properties of the Fe ions in a paramagnetic (Ga$_{0.95}$,Fe$_{0.05}$)As thin film. The observed Fe 2$p$-3$d$ RPES spectra show that the Fe 3$d$ states are similar to those of ferromagnetic (Ga,Fe)Sb. The estimated Fermi level is located in the middle of the band gap in (Ga,Fe)As. The Fe $L_{2,3}$ XMCD spectra of (Ga$_{0.95}$,Fe$_{0.05}$)As show pre-edge structures, which are not observed in the Fe-doped FMSs, indicating that the minority-spin ($downarrow$) $e_downarrow$ states are vacant in (Ga$_{0.95}$,Fe$_{0.05}$)As. The XMCD results suggest that the carrier-induced ferromagnetic interaction in (Ga$_{0.95}$,Fe$_{0.05}$)As is short-ranged and weaker than that in the Fe-doped FMSs. The experimental findings suggest that the electron occupancy of the $e_downarrow$ states contributes to the appearance of ferromagnetism in the Fe-doped III-V semiconductors, for p-type as well as n-type compounds.
We have studied a non volatile memory effect in the mixed valent compound La$_{0.5}$Ca$_{0.5}$MnO$_{3}$ induced by magnetic field (H). In a previous work [R.S. Freitas et al., Phys. Rev. B 65 (2002) 104403], it has been shown that the response of this system upon application of H strongly depends on the temperature range, related to three well differentiated regimes of phase separation occurring below 220 K. In this work we compare memory capabilities of the compound, determined following two different experimental procedures for applying H, namely zero field cooling and field cooling the sample. These results are analyzed and discussed within the scenario of phase separation.
X-ray absorption (XAS) and x-ray magnetic circular dichroism (XMCD) spectra at the L$_{2,3}$ edges of Mn in (Ge,Mn) compounds have been measured and are compared to the results of first principles calculation. Early textit{ab initio} studies show that the Density Functional Theory (DFT) can very well describe the valence band electronic properties but fails to reproduce a characteristic change of sign in the L$_{3}$ XMCD spectrum of Mn in Ge$_3$Mn$_5$, which is observed in experiments. In this work we demonstrate that this disagreement is partially related to an underestimation of the exchange splitting of Mn 2$p$ core states within the local density approximation. It is shown that the change in sign experimentally observed is reproduced if the exchange splitting is accurately calculated within the Hartree-Fock approximation, while the final states can be still described by the DFT. This approach is further used to calculate the XMCD in different (Ge,Mn) compounds. It demonstrates that the agreement between experimental and theoretical spectra can be improved by combining state of the art calculations for the core and valence states respectively.
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