No Arabic abstract
Confocal laser scanning microscopy (CLSM) is a non-destructive, highly-efficient optical characterization method for large-area analysis of graphene on different substrates, which can be applied in ambient air, does not require additional sample preparation, and is insusceptible to surface charging and surface contamination. CLSM leverages optical properties of graphene and provides greatly enhanced optical contrast and mapping of thickness down to a single layer. We demonstrate the effectiveness of CLSM by measuring mechanically exfoliated and chemical vapor deposition graphene on Si/SiO2, and epitaxial graphene on SiC. In the case of graphene on Si/SiO2, both CLSM intensity and height mapping is powerful for analysis of 1-5 layers of graphene. For epitaxial graphene on SiC substrates, the CLSM intensity allows us to distinguish features such as dense, parallel 150 nm wide ribbons of graphene (associated with the early stages of the growth process) and large regions covered by the interfacial layer and 1-3 layers of graphene. In both cases, CLSM data shows excellent correlation with conventional optical microscopy, atomic force microscopy, Kelvin probe force microscopy, conductive atomic force microscopy, scanning electron microscopy and Raman mapping, with a greatly reduced acquisition time. We demonstrate that CLSM is an indispensable tool for rapid analysis of mass-produced graphene and is equally relevant to other 2D materials.
We present a new particle image correlation technique for resolving nanoparticle flow velocity using confocal laser scanning microscopy (CLSM). The two primary issues that complicate nanoparticle scanning laser image correlation (SLIC) based velocimetry are (1) the use of diffusion dominated nanoparticles as flow tracers, which introduce a random decorrelating error into the velocity estimate, and (2) the effects of the scanning laser image acquisition, which introduces a bias error. To date, no study has quantified these errors or demonstrated a means to deal with them in SLIC velocimetry. In this work, we build upon the robust phase correlation (RPC) and existing methods of SLIC to quantify and mitigate these errors. First, we implement an ensemble RPC instead of using an ensemble standard cross correlation, and develop an SLIC optimal filter that maximizes the correlation strength in order to reliably and accurately detect the correlation peak representing the most probable average displacement of the nanoparticles. Secondly, we developed an analytical model of the SLIC measurement bias error due to image scanning of diffusion dominated tracer particles. We show that the bias error depends only on the ratio of the mean velocity of the tracer particles to that of the laser scanner and we use this model to correct the induced errors. We validated our technique using synthetic images and experimentally obtained SLIC images of nanoparticle flow through a micro-channel. Our technique reduced the error by up to a factor of ten compared to other SLIC algorithms for the images tested in this study. Moreover, our optimized RPC filter is reducing the number of image pairs required for the convergence of the ensemble correlation by two orders of magnitude compared to the standard cross correlation.
We report the development of a scanning force microscope based on an ultra-sensitive silicon nitride membrane transducer. Our development is made possible by inverting the standard microscope geometry - in our instrument, the substrate is vibrating and the scanning tip is at rest. We present first topography images of samples placed on the membrane surface. Our measurements demonstrate that the membrane retains an excellent force sensitivity when loaded with samples and in the presence of a scanning tip. We discuss the prospects and limitations of our instrument as a quantum-limited force sensor and imaging tool.
The scanning mid-IR-laser microscopy was previously demonstrated as an effective tool for characterization of different semiconductor crystals. Now the technique has been successfully applied for the investigation of CZ Si$_x$Ge$_{1-x}$---a promising material for photovoltaics---and multicrystalline silicon for solar cells.
Spin-polarized scanning tunneling microscopy (SP-STM) measures tunnel magnetoresistance (TMR) with atomic resolution. While various methods for achieving SP probes have been developed, each is limited with respect to fabrication, performance, and allowed operating conditions. In this study, we present the fabrication and use of SP-STM tips made from commercially available antiferromagnetic $rm{Mn_{88}Ni_{12}}$ foil. The tips are intrinsically SP, which is attractive for exploring magnetic phenomena in the zero field limit. The tip material is relatively ductile and straightforward to etch. We benchmark the conventional STM and spectroscopic performance of our tips and demonstrate their spin sensitivity by measuring the two-state switching of holmium single atom magnets on MgO/Ag(100).
Reduction of the inter-probe distance in multi-probe and double-tip STM down to the nanometer scale has been a longstanding and technically difficult challenge. Recent multi-probe systems have allowed for significant progress by achieving distances of around 30 nm using two individually driven, traditional metal wire tips. For situations where simple alignment and a fixed separation can be advantageous, we here present the fabrication of on-chip double-tip devices that incorporate two mechanically fixed gold tips with a tip separation of only 35 nm. We utilize the excellent mechanical, insulating and dielectric properties of high quality SiN as a base material to realize easy-to-implement, lithographically defined and mechanically stable tips. With their large contact pads and adjustable footprint these novel tips can be easily integrated with most existing commercial combined STM/AFM systems.