No Arabic abstract
Snake states and Aharonov-Bohm interferences are examples of magnetoconductance oscillations that can be observed in a graphene p-n junction. Even though they have already been reported in suspended and encapsulated devices including different geometries, a direct comparison remains challenging as they were observed in separate measurements. Due to the similar experimental signatures of these effects a consistent assignment is difficult, leaving us with an incomplete picture. Here we present measurements on p-n junctions in encapsulated graphene revealing several sets of magnetoconductance oscillations allowing for their direct comparison. We analysed them with respect to their charge carrier density, magnetic field, temperature and bias dependence in order to assign them to either snake states or Aharonov-Bohm oscillations. Furthermore we were able to consistently assign the various Aharonov-Bohm interferences to the corresponding area which the edge states enclose. Surprisingly, we find that snake states and Aharonov-Bohm interferences can co-exist within a limited parameter range.
We study a model of a $p$-$n$ junction in single-layer graphene in the presence of a perpendicular magnetic field and spin-orbit interactions. By solving the relevant quantum-mechanical problem for a potential step, we determine the exact spectrum of spin-resolved dispersive Landau levels. Close to zero energy, we find a pair of linearly dispersing zero modes, which possess a wave-vector-dependent spin polarization and can be regarded as quantum analogous of spinful snake states. We show that the Rashba spin-orbit interaction, in particular, produces a wave vector shift between the dispersions of these modes with observable interference effects. These effects can in principle provide a way to detect the presence of Rashba spin-orbit interaction and measure its strength. Our results suggest that a graphene $p$-$n$ junction in the presence of strong spin-orbit interaction could be used as a building block in a spin field-effect transistor.
Spatial separation of electrons and holes in graphene gives rise to existence of plasmon waves confined to the boundary region. Theory of such guided plasmon modes within hydrodynamics of electron-hole liquid is developed. For plasmon wavelengths smaller than the size of charged domains plasmon dispersion is found to be omega ~ q^(1/4). Frequency, velocity and direction of propagation of guided plasmon modes can be easily controlled by external electric field. In the presence of magnetic field spectrum of additional gapless magnetoplasmon excitations is obtained. Our findings indicate that graphene is a promising material for nanoplasmonics.
Topological insulator nanowires with uniform cross section, combined with a magnetic flux, can host both a perfectly transmitted mode and Majorana zero modes. Here we consider nanowires with rippled surfaces---specifically, wires with a circular cross section with a radius varying along its axis---and calculate their transport properties. At zero doping, chiral symmetry places the clean wires (no impurities) in the AIII symmetry class, which results in a $mathbb{Z}$ topological classification. A magnetic flux threading the wire tunes between the topologically distinct insulating phases, with perfect transmission obtained at the phase transition. We derive an analytical expression for the exact flux value at the transition. Both doping and disorder breaks the chiral symmetry and the perfect transmission. At finite doping, the interplay of surface ripples and disorder with the magnetic flux modifies quantum interference such that the amplitude of Aharonov-Bohm oscillations reduces with increasing flux, in contrast to wires with uniform surfaces where it is flux-independent.
We developed a multi-level lithography process to fabricate graphene p-n-p junctions with the novel geometry of contactless, suspended top gates. This fabrication procedure minimizes damage or doping to the single atomic layer, which is only exposed to conventional resists and developers. The process does not require special equipment for depositing gate dielectrics or releasing sacrificial layers, and is compatible with annealing procedures that improve device mobility. Using this technique, we fabricate graphene devices with suspended local top gates, where the creation of high quality graphene p-n-p junctions is confirmed by transport data at zero and high magnetic fields.
Accessing intrinsic properties of a graphene device can be hindered by the influence of contact electrodes. Here, we capacitively couple graphene devices to superconducting resonant circuits and observe clear changes in the resonance- frequency and -widths originating from the internal charge dynamics of graphene. This allows us to extract the density of states and charge relaxation resistance in graphene p-n junctions without the need of electrical contacts. The presented characterizations pave a fast, sensitive and non-invasive measurement of graphene nanocircuits.