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Register a new userGate-controlled anisotropy in Aharonov-Casher spin interference: signatures of Dresselhaus spin-orbit inversion and spin phases
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The coexistence of Rashba and Dresselhaus spin-orbit interactions (SOIs) in semiconductor quantum wells leads to an anisotropic effective field coupled to carriers spins. We demonstrate a gate-controlled anisotropy in Aharonov-Casher (AC) spin interferometry experiments with InGaAs mesoscopic rings by using an in-plane magnetic field as a probe. Supported by a perturbation-theory approach, we find that the Rashba SOI strength controls the AC resistance anisotropy via spin dynamic and geometric phases and establish ways to manipulate them by employing electric and magnetic tunings. Moreover, assisted by two-dimensional numerical simulations, we identify a remarkable anisotropy inversion in our experiments attributed to a sign change in the renormalized linear Dresselhaus SOI controlled by electrical means, which would open a door to new possibilities for spin manipulation.
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We theoretically investigate the spin-dependent Seebeck effect in an Aharonov-Bohm mesoscopic ring in the presence of both Rashba and Dresselhaus spin-orbit interactions under magnetic flux perpendicular to the ring. We apply the Greens function method to calculate the spin Seebeck coefficient employing the tight-binding Hamiltonian. It is found that the spin Seebeck coefficient is proportional to the slope of the energy-dependent transmission coefficients. We study the strong dependence of spin Seebeck coefficient on the Fermi energy, magnetic flux, strength of spin-orbit coupling, and temperature. Maximum spin Seebeck coefficients can be obtained when the strengths of Rashba and Dresselhaus spin-orbit couplings are slightly different. The spin Seebeck coefficient can be reduced by increasing temperature and disorder.
In layered semiconductors with spin-orbit interaction (SOI) a persistent spin helix (PSH) state with suppressed spin relaxation is expected if the strengths of the Rashba and Dresselhaus SOI terms, alpha and beta, are equal. Here we demonstrate gate control and detection of the PSH in two-dimensional electron systems with strong SOI including terms cubic in momentum. We consider strain-free InGaAs/InAlAs quantum wells and first determine alpha/beta ~ 1 for non-gated structures by measuring the spin-galvanic and circular photogalvanic effects. Upon gate tuning the Rashba SOI strength in a complementary magneto-transport experiment, we then monitor the complete crossover from weak antilocalization via weak localization to weak antilocalization, where the emergence of weak localization reflects a PSH type state. A corresponding numerical analysis reveals that such a PSH type state indeed prevails even in presence of strong cubic SOI, however no longer at alpha = beta.
We study the tunability of the spin-orbit interaction in a two-dimensional electron gas with a front and a back gate electrode by monitoring the spin precession frequency of drifting electrons using time-resolved Kerr rotation. The Rashba spin splitting can be tuned by the gate biases, while we find a small Dresselhaus splitting that depends only weakly on the gating. We determine the absolute values and signs of the two components and show that for zero Rashba spin splitting the anisotropy of the spin-dephasing rate vanishes.
The concept of gauge fields plays a significant role in many areas of physics from particle physics and cosmology to condensed matter systems, where gauge potentials are a natural consequence of electromagnetic fields acting on charged particles and are of central importance in topological states of matter. Here, we report on the experimental realization of a synthetic non-Abelian gauge field for photons in a honeycomb microcavity lattice. We show that the effective magnetic field associated with TE-TM splitting has the symmetry of Dresselhaus spin-orbit interaction around Dirac points in the dispersion, and can be regarded as an SU(2) gauge field. The symmetry of the field is revealed in the optical spin Hall effect (OSHE), where under resonant excitation of the Dirac points precession of the photon pseudospin around the field direction leads to the formation of two spin domains. Furthermore, we observe that the Dresselhaus field changes its sign in the same Dirac valley on switching from s to p bands in good agreement with the tight binding modelling. Our work demonstrating a non-Abelian gauge field for light on the microscale paves the way towards manipulation of photons via spin on a chip.
Spin relaxation can be greatly enhanced in narrow channels of two-dimensional electron gas due to ballistic spin resonance, which is mediated by spin-orbit interaction for trajectories that bounce rapidly between channel walls. The channel orientation determines which momenta affect the relaxation process, so comparing relaxation for two orientations provides a direct determination of spin-orbit anisotropy. Electrical measurements of pure spin currents are shown to reveal an order of magnitude stronger relaxation for channels fabricated along the [110] crystal axis in a GaAs electron gas compared to [-110] channels, believed to result from interference between structural and bulk inversion asymmetries.
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