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Register a new userObservation of Zero Resistance in As-Electrodeposited FeSe
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Superconducting FeSe films were electrochemically deposited on rolling-assisted biaxially textured substrate (RABiTS) tape. We observed zero resistivity in the as-electrodeposited FeSe film prepared on the RABiTS when the appropriate voltage was applied while it was dipped into the solution. When the RABiTS tape was dipped in the solution without applying voltage, a thin Se film was deposited on the substrate. The compositional ratio of the FeSe film got closer to the stoichiometric ratio with decreasing the dipping time before applying voltage.
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Even after nearly a century of discovery of superconductivity, there has been no direct experimental proof of the expected zero resistance of superconductors. Indeed, it has been believed that it is impossible to experimentally show that the resistance has fallen exactly to zero. In this work we demonstrate that the dc resistivity of a superconducting material below the transition temperature has to be exactly zero.
It is well known that superconductivity in Fe-based materials is favoured under tetragonal symmetry, whereas competing orders such as spin-density-wave (SDW) and nematic orders emerge or are reinforced upon breaking the fourfold (C4) symmetry. Accordingly, suppression of orthorhombicity below the superconducting transition temperature (Tc) is found in underdoped compounds. Epitaxial film growth on selected substrates allows the design of crystal specific lattice distortions. Here we show that despite the breakdown of the C4 symmetry induced by a 5% difference in the lattice parameters, monolayers of FeSe grown by molecular beam epitaxy (MBE) on the (110) surface of SrTiO3 (STO) substrates [FeSe/STO(110)] exhibit a large nearly isotropic superconducting (SC) gap of 16 meV closing around 60 K. Our results on this new interfacial material, similar to those obtained previously on FeSe/STO(001), contradict the common belief that the C4 symmetry is essential for reaching high Tcs in Fe-based superconductors.
We investigate the thermodynamic properties of FeSe under the in-plane magnetic fields using torque magnetometry, specific heat, magnetocaloric measurements. Below the upper critical field Hc2, we observed the field-induced anomalies at H1 ~ 15 T and H2 ~ 22 T near H//ab and below a characteristic temperature T* ~ 2 K. The transition magnetic fields H1 and H2 exhibit negligible dependence on both temperature and field orientation. This contrasts with the strong temperature and angle dependence of Hc2, suggesting that these anomalies are attributed to the field-induced phase transitions, originating from the inherent spin-density-wave instability of quasiparticles near the superconducting gap minima or possible Flude-Ferrell-Larkin-Ovchinnikov state in the highly spin-polarized Fermi surfaces. Our observations imply that FeSe, an atypical multiband superconductor with extremely small Fermi energies, represents a unique model system for stabilizing unusual superconducting orders beyond the Pauli limit.
To elucidate the origin of nematic order in FeSe, we performed field-dependent 77Se-NMR measurements on single crystals of FeSe. We observed orbital ordering from the splitting of the NMR spectra and Knight shift and a suppression of it with magnetic field B0 up to 16 T applied parallel to the Fe-planes. There is a significant change in the distribution and magnitude of the internal magnetic field across the orbital ordering temperature Torb while stripe-type antiferromagnetism is absent. Giant antiferromagnetic (AFM) spin fluctuations measured by the NMR spin-lattice relaxation are gradually developed starting at ~ 40 K, which is far below the nematic ordering temperature Tnem. These results demonstrate that orbital ordering is the origin of the nematic order, and the AFM spin fluctuation is the driving mechanism of superconductivity in FeSe under the presence of the nematic order.
The resistive transition in nanocomposite films of silver (Ag) nanoclusters of ~ 1 nm diameter embedded in gold (Au) matrix exhibits an anomalous resistance peak at the onset of the transition, even for transition temperatures as high as 260 K. The maximum value of the resistance ranges between ~ 30% - 300% above that of the normal state depending on devices as well as lead configuration within a single device. The excess resistance regime was observed in about 10% of the devices, and extends from ~ 10 - 100 K. Application of magnetic field of 9 T was found to partially suppress the excess resistance. From the critical current behavior, as well as negative differential resistance in the current-voltage characteristics, we discuss the possibility of interacting phase slip centers and alternate physical scenarios that may cause the excess resistance in our system.
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