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Giant photovoltaic effect due to bulk photovoltaic effect observed in multiferroic BiFeO3 thin films has triggered a renewed interest on photoferroelectric materials for photovoltaic applications. Tremendous advance has been done to improve power conversion efficiency (up to up to 8.1%) in photoferroelectrics via absorption increase using narrow bandgap ferroelectrics. Other strategies, as it is the more efficient use of ferroelectric internal electric field, are ongoing. Moreover, as a by-product, several progress have been also achieved on photostriction that is the photo-induced deformation phenomenon. Here, we review ongoing and promising routes to improve ferroelectrics photoresponse.
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The recent study of oxides led to the discovery of several new fascinating physical phenomena. High-temperature superconductivity, colossal magnetoresistance, dilute magnetic doping, or multiferroicity were discovered and investigated in transition-metal oxides, representing a prototype class of strongly correlated electronic systems. This development was accompanied by an enormous progress regarding thin film fabrication. Within the past two decades, epitaxial thin films with crystalline quality approaching semiconductor standards became available using laser molecular beam epitaxy. This evolution is reviewed, particularly with emphasis on transition-metal oxide thin films, their versatile physical properties, and their impact on the field of spintronics. First, the physics of ferromagnetic half-metallic oxides, such as the doped manganites, the double perovskites and magnetite is presented together with possible applications based on magnetic tunnel junctions. Second, the wide bandgap semiconductor zinc oxide is discussed particularly with regard to the controversy of dilute magnetic doping with transition-metal ions and the possibility of realizing p-type conductivity. Third, the field of oxide multiferroics is presented with the recent developments in single-phase multiferroic thin film perovskites as well as in composite multiferroic hybrids.
X-ray amorphous manganese oxides were prepared by reduction of sodium permanganate by lithium iodide in aqueous medium (MnOx-I) and by decomposition of manganese carbonate at moderate temperature (MnOx-C). TEM showed that these materials are not amorphous, but nanostructured, with a prominent spinel substructure in MnOx-C. These materials intercalate lithium with capacities up to 200 mAh/g at first cycle (potential window 1.8-4.3 V) and 175 mAh/g at 100th cycle. Best performances for MnOx-C are obtained with cobalt doping. Potential electrochemical spectroscopy shows that the initial discharge induces a 2-phase transformation in MnOx-C phases, but not in MnOx-I ones. EXAFS and XANES confirm the participation of manganese in the redox process, with variations in local structure much smaller than in known long-range crystallized manganese oxides. X-ray absorption spectroscopy also shows that cobalt in MnOx-C is divalent and does not participate in the electrochemical reaction.
Electric-field-induced resistance switching (RS) phenomena have been studied for over 60 years in metal/dielectrics/metal structures. In these experiments a wide range of dielectrics have been studied including binary transition metal oxides, perovskite oxides, chalcogenides, carbon- and silicon-based materials, as well as organic materials. RS phenomena can be used to store information and offer an attractive performance, which encompasses fast switching speeds, high scalability, and the desirable compatibility with Si-based complementary-metal-oxide-semiconductor fabrication. This is promising for nonvolatile memory technology, i.e. resistance random access memory (RRAM). However, a comprehensive understanding of the underlying mechanism is still lacking. This impedes a faster product development as well as an accurate assessment of the device performance potential. Generally speaking, RS occurs not in the entire dielectric but only a small, confined region, which results from the local variation of conductivity in dielectrics. In this review, we focus on the RS in oxides with such an inhomogeneous conductivity. According to the origin of the conductivity inhomogeneity, the RS phenomena and their working mechanism are reviewed by dividing them into two aspects: interface RS, based on the change of contact resistance at metal/oxide interface due to the change of Schottky barrier and interface chemical layer, and bulk RS, realized by the formation, connection, and disconnection of conductive channels in the oxides. Finally the current challenges of RS investigation and the potential improvement of the RS performance for the nonvolatile memories are discussed.
We have systematically investigated substrate-strain effects on the electronic structures of two representative Sr-iridates, a correlated-insulator Sr$_2$IrO$_4$ and a metal SrIrO$_3$. Optical conductivities obtained by the emph{ab initio} electronic structure calculations reveal that the tensile strain shifts the optical peak positions to higher energy side with altered intensities, suggesting the enhancement of the electronic correlation and spin-orbit coupling (SOC) strength in Sr-iridates. The response of the electronic structure upon tensile strain is found to be highly correlated with the direction of magnetic moment, the octahedral connectivity, and the SOC strength, which cooperatively determine the robustness of $J_{eff}$=1/2 ground states. Optical responses are analyzed also with microscopic model calculation and compared with corresponding experiments. In the case of SrIrO$_3$, the evolution of the electronic structure near the Fermi level shows high tunability of hole bands, as suggested by previous experiments.
We have performed a systematic study of the electronic structures of BiMeO3 (Me = Sc, Cr, Mn, Fe, Co, Ni) series by soft X-ray emission (XES) and absorption (XAS) spectroscopy. The band gap values were estimated for all compounds in the series. For BiFeO3 a band gap of ~0.9 eV was obtained from the alignment of the O Ka XES and O 1s XAS. The O 1s XAS spectrum of BiNiO3 indicates that the formation of holes is due to a Ni2+ valency rather than a Ni3+ valency. We have found that the O Ka XES and O 1s XAS of BiMeO3 probing partially occupied and vacant O 2p states, respectively, are in agreement with the O 2p densities of states obtained from spin-polarized band structure calculations. The O Ka XES spectra show the same degree of Bi 6s--O 2p hybridization for all compounds in the series. We argue herein that the stereochemical activity of Bi 6s lone pairs must be supplemented with inversion symmetry breaking to allow electric polarization. For BiMnO3 and BiFeO3, two cases of multiferroic materials in this series, the former breaks the inversion symmetry due to the antiferromagnetic order induced by particular orbital ordering in the highly distorted perovskite structure and the latter has rhombohedral crystal structure without inversion symmetry.
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