Ultrahigh capacitive energy storage in highly oriented BaZr(x)Ti(1-x)O3 thin films prepared by pulsed laser deposition


Abstract in English

We report structural, optical, temperature and frequency dependent dielectric, and energy storage properties of pulsed laser deposited (100) highly textured BaZr(x)Ti(1-x)O3 (x = 0.3, 0.4 and 0.5) relaxor ferroelectric thin films on La0.7Sr0.3MnO3/MgO substrates which make this compound as a potential lead-free capacitive energy storage material for scalable electronic devices. A high dielectric constant of ~1400 - 3500 and a low dielectric loss of <0.025 were achieved at 10 kHz for all three compositions at ambient conditions. Ultrahigh stored and recoverable electrostatic energy densities as high as 214 +/- 1 and 156 +/- 1 J/cm3, respectively, were demonstrated at a sustained high electric field of ~3 MV/cm with an efficiency of 72.8 +/- 0.6 % in optimum 30% Zr substituted BaTiO3 composition.

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