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Register a new userPeriodicity-free unfolding method of electronic energy spectra: Application to twisted bilayer graphene
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Yu-ichiro Matsushita
Publication date
2017
fields
Physics
and research's language is
English
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We propose a novel periodicity-free unfolding method of the electronic energy spectra. Our new method solves a serious problem that calculated electronic band structure strongly depends on the choice of the simulation cell, i.e., primitive-cell or supercell. The present method projects the electronic states onto the free-electron states, giving rise to the {it plane-wave unfolded} spectra. Using the method, the energy spectra can be calculated as a completely independent quantity from the choice of the simulation cell. We have examined the unfolded energy spectra in detail for three models and clarified the validity of our method: One-dimensional interacting two chain model, monolayer graphene, and twisted bilayer graphene. Furthermore, we have discussed that our present method is directly related to the experimental ARPES (Angle-Resolved Photo-Emission Spectroscopy) spectra.
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We propose a new unfolding scheme to analyze energy spectra of complex large-scale systems which are inherently of multi-periodicity. Considering twisted bilayer graphene (tBLG) as an example, we first show that the conventional unfolding scheme in the past using a single primitive-cell representation causes serious problems in analyses of the energy spectra. We then introduce our multi-space representation scheme in the unfolding method and clarify its validity for tBLG. Velocity renormalization of Dirac electrons in tBLG is elucidated in the present unfolding scheme.
In this paper, the electronic properties of 30{deg} twisted double bilayer graphene, which loses the translational symmetry due to the incommensurate twist angle, are studied by means of the tight-binding approximation. We demonstrate the interlayer decoupling in the low-energy region from various electronic properties, such as the density of states, effective band structure, optical conductivity and Landau level spectrum. However, at Q points, the interlayer coupling results in the appearance of new Van Hove singularities in the density of states, new peaks in the optical conductivity and importantly the 12-fold-symmetry-like electronic states. The k-space tight-binding method is adopted to explain this phenomenon. The electronic states at Q points show the charge distribution patterns more complex than the 30{deg} twisted bilayer graphene due to the symmetry decrease. These phenomena appear also in the 30{deg} twisted interface between graphene monolayer and AB stacked bilayer.
We study the electronic properties of twisted bilayers graphene in the tight-binding approximation. The interlayer hopping amplitude is modeled by a function, which depends not only on the distance between two carbon atoms, but also on the positions of neighboring atoms as well. Using the Lanczos algorithm for the numerical evaluation of eigenvalues of large sparse matrices, we calculate the bilayer single-electron spectrum for commensurate twist angles in the range $1^{circ}lesssimthetalesssim30^{circ}$. We show that at certain angles $theta$ greater than $theta_{c}approx1.89^{circ}$ the electronic spectrum acquires a finite gap, whose value could be as large as $80$ meV. However, in an infinitely large and perfectly clean sample the gap as a function of $theta$ behaves non-monotonously, demonstrating exponentially-large jumps for very small variations of $theta$. This sensitivity to the angle makes it impossible to predict the gap value for a given sample, since in experiment $theta$ is always known with certain error. To establish the connection with experiments, we demonstrate that for a system of finite size $tilde L$ the gap becomes a smooth function of the twist angle. If the sample is infinite, but disorder is present, we expect that the electron mean-free path plays the same role as $tilde L$. In the regime of small angles $theta<theta_c$, the system is a metal with a well-defined Fermi surface which is reduced to Fermi points for some values of $theta$. The density of states in the metallic phase varies smoothly with $theta$.
The structural and electronic properties of twisted bilayer graphene are investigated from first principles and tight binding approach as a function of the twist angle (ranging from the first magic angle $theta=1.08^circ$ to $theta=3.89^circ$, with the former corresponding to the largest unit cell, comprising 11164 carbon atoms). By properly taking into account the long-range van der Waals interaction, we provide the patterns for the atomic displacements (with respect to the ideal twisted bilayer). The out-of-plane relaxation shows an oscillating (buckling) behavior, very evident for the smallest angles, with the atoms around the AA stacking regions interested by the largest displacements. The out-of-plane displacements are accompanied by a significant in-plane relaxation, showing a vortex-like pattern, where the vorticity (intended as curl of the displacement field) is reverted when moving from the top to the bottom plane and viceversa. Overall, the atomic relaxation results in the shrinking of the AA stacking regions in favor of the more energetically favorable AB/BA stacking domains. The measured flat bands emerging at the first magic angle can be accurately described only if the atomic relaxations are taken into account. Quite importantly, the experimental gaps separating the flat band manifold from the higher and lower energy bands cannot be reproduced if only in-plane or only out-of-plane relaxations are considered. The stability of the relaxed bilayer at the first magic angle is estimated to be of the order of 0.5-0.9 meV per atom (or 7-10 K). Our calculations shed light on the importance of an accurate description of the vdW interaction and of the resulting atomic relaxation to envisage the electronic structure of this really peculiar kind of vdW bilayers.
Twisted double bilayer graphene has recently emerged as an interesting moire material that exhibits strong correlation phenomena that are tunable by an applied electric field. Here we study the atomic and electronic properties of three different graphene double bilayers: double bilayers composed of two AB stacked bilayers (AB/AB), double bilayers composed of two AA stacked bilayers (AA/AA) as well as heterosystems composed of one AB and one AA bilayer (AB/AA). The atomic structure is determined using classical force fields. We find that the inner layers of the double bilayer exhibit significant in-plane and out-of-plane relaxations, similar to twisted bilayer graphene. The relaxations of the outer layers depend on the stacking: atoms in AB bilayers follow the relaxations of the inner layers, while atoms in AA bilayers attempt to avoid higher-energy AA stacking. For the relaxed structures, we calculate the electronic band structures using the tight-binding method. All double bilayers exhibit flat bands at small twist angles, but the shape of the bands depends sensitively on the stacking of the outer layers. To gain further insight, we study the evolution of the band structure as the outer layers are rigidly moved away from the inner layers, while preserving their atomic relaxations. This reveals that the hybridization with the outer layers results in an additional flattening of the inner-layer flat band manifold. Our results establish AA/AA and AB/AA twisted double bilayers as interesting moire materials with different flat band physics compared to the widely studied AB/AB system.
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