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Register a new userFerroic collinear multilayer magnon spin valve
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Information transport and processing by pure magnonic spin currents in insulators is a promising alternative to conventional charge-current driven spintronic devices. The absence of Joule heating as well as the reduced spin wave damping in insulating ferromagnets has been suggested to enable the implementation of efficient logic devices. After the proof of concept for a logic majority gate based on the superposition of spin waves has been successfully demonstrated, further components are required to perform complex logic operations. A key component is a switch that corresponds to a conventional magnetoresistive spin valve. Here, we report on magnetization orientation dependent spin signal detection in collinear magnetic multilayers with spin transport by magnonic spin currents. We find in Y3Fe5O12|CoO|Co tri-layers that the detected spin signal depends on the relative alignment of Y3Fe5O12 and Co. This demonstrates a spin valve behavior with an effect amplitude of 120% in our systems. We demonstrate the reliability of the effect and investigate the origin by both temperature and power dependent measurements, showing that spin rectification effects and a magnetic layer alignment dependent spin transport effect result in the measured signal.
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We report the observation of the spin valve effect in (Ga,Mn)As/p-GaAs/(Ga,Mn)As trilayer devices. Magnetoresistance measurements carried out in the current in plane geometry reveal positive magnetoresistance peaks when the two ferromagnetic layers are magnetized orthogonal to each other. Measurements carried out for different post-growth annealing conditions and spacer layer thickness suggest that the positive magnetoresistance peaks originate in a noncollinear spin valve effect due to spin-dependent scattering that is believed to occur primarily at interfaces.
A range of ferroic glasses, magnetic, polar, relaxor and strain glasses, are considered together from the perspective of spin glasses. Simple mathematical modelling is shown to provide a possible conceptual unification to back similarities of experimental observations, without considering all possible complexities and alternatives.
As well as several different kinds of periodically ordered ferroic phases, there are now recognized several different examples of ferroic glassiness, although not always described as such and in material fields of study that have mostly been developed separately. In this chapter an attempt is made to indicate common conceptual origins and features, observed or anticipated. Throughout, this aim is pursued through the use of simple models, in an attempt to determine probable fundamental origins within a larger picture of greater complication, and analogies between systems in different areas, both experimental and theoretical, in the light of significant progress in spin glass understanding.
The key physics of the spin valve involves spin-polarized conduction electrons propagating between two magnetic layers such that the device conductance is controlled by the relative magnetization orientation of two magnetic layers. Here, we report the effect of a magnon valve which is made of two ferromagnetic insulators (YIG) separated by a nonmagnetic spacer layer (Au). When a thermal gradient is applied perpendicular to the layers, the inverse spin Hall voltage output detected by a Pt bar placed on top of the magnon valve depends on the relative orientation of the magnetization of two YIG layers, indicating the magnon current induced by spin Seebeck effect at one layer affects the magnon current in the other layer separated by Au. We interpret the magnon valve effect by the angular momentum conversion and propagation between magnons in two YIG layers and conduction electrons in the Au layer. The temperature dependence of magnon valve ratio shows approximately a power law, supporting the above magnon-electron spin conversion mechanism. This work opens a new class of valve structures beyond the conventional spin valves.
Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, demonstrating spin-transport through a semiconducting MoS2 channel is challenging. Here we demonstrate the electrical spin injection and detection in a multilayer MoS2 semiconducting channel. A magnetoresistance (MR) around 1% has been observed at low temperature through a 450nm long, 6 monolayer thick channel with a Co/MgO spin injector and detector. From a systematic study of the bias voltage, temperature and back-gate voltage dependence of MR, it is found that the hopping via localized states in the contact depletion region plays a key role for the observation of the two-terminal MR. Moreover, the electron spin-relaxation is found to be greatly suppressed in the multilayer MoS2 channel for in-plan spin injection. The underestimated long spin diffusion length (~235nm) and large spin lifetime (~46ns) open a new avenue for spintronic applications using multilayer transition metal dichalcogenides.
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