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Register a new userOptically pumped GeSn micro-disks with 16 % Sn lasing at 3.1 um up to 180K
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Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 um wavelength up to 130 K. In this work, we report a longer emitted wavelength and a significant improvement in lasing temperature. The improvements resulted from the use of higher Sn content GeSn layers of optimized crystalline quality, grown on graded Sn content buffers using Reduced Pressure CVD. The fabricated GeSn micro-disks with 13% and 16% of Sn showed lasing operation at 2.6 um and 3.1 um wavelengths, respectively. For the longest wavelength (i.e 3.1 um), lasing was demonstrated up to 180 K, with a threshold of 377 kW/cm2 at 25 K.
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GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless suffer from a lack of defect management and from high threshold densities. In this work we examine the lasing characteristics of GeSn alloys with Sn contents ranging from 7 % to 10.5 %. The GeSn layers were patterned into suspended microdisk cavities with different diameters in the 4-SI{8 }{micrometer} range. We evidence direct band gap in GeSn with 7 % of Sn and lasing at 2-SI{2.3 }{micrometer} wavelength under optical injection with reproducible lasing thresholds around SI{10 }{kilowattpersquarecentimeter}, lower by one order of magnitude as compared to the literature. These results were obtained after the removal of the dense array of misfit dislocations in the active region of the GeSn microdisk cavities. The results offer new perspectives for future designs of GeSn-based laser sources.
The surprising recent observation of highly emissive triplet-states in lead halide perovskites accounts for their orders-of-magnitude brighter optical signals and high quantum efficiencies compared to other semiconductors. This makes them attractive for future optoelectronic applications, especially in bright low-threshold nano-lasers. Whilst non-resonantly pumped lasing from all-inorganic lead-halide perovskites is now well-established as an attractive pathway to scalable low-power laser sources for nano-optoelectronics, here we showcase a resonant optical pumping scheme on a fast triplet-state in CsPbBr3 nanocrystals. The scheme allows us to realize a polarized triplet-laser source that dramatically enhances the coherent signal by one order of magnitude whilst suppressing non-coherent contributions. The result is a source with highly attractive technological characteristics including a bright and polarized signal, and a high stimulated-to-spontaneous emission signal contrast that can be filtered to enhance spectral purity. The emission is generated by pumping selectively on a weakly-confined excitonic state with a Bohr radius ~10 nm in the nanocrystals. The exciton fine-structure is revealed by the energy-splitting resulting from confinement in nanocrystals with tetragonal symmetry. We use a linear polarizer to resolve two-fold non-degenerate sub-levels in the triplet exciton and use photoluminescence excitation spectroscopy to determine the energy of the state before pumping it resonantly.
10 {mu}m lasing is studied in a compact CO2-He cell pressurized up to 15 atm when optically pumped by a ~50 mJ Fe:ZnSe laser tunable around 4.3 {mu}m. The optimal pump wavelength and partial pressure of CO2 for generating 10 {mu}m pulses are found to be ~4.4 {mu}m and 0.75 atm, respectively. Without cavity optimization, the optical-to-optical conversion efficiency reached ~10% at a total pressure of 7 atm. The gain lifetime is measured to be ~1 {mu}s at pressures above 10 atm, indicating the feasibility of using high-pressure optically pumped CO2 for the efficient amplification of picosecond 10 {mu}m pulses.
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Continuous-wave mode-locked femtosecond 2 um solid-state laser with a c-cut Tm:CaYAlO4 as gain medium was experimentally demonstrated. The mode locked laser generated stable pulses with average output power as high as 531 mW, pulse duration of 496 fs, and repetition rate of 97 MHz at 1975 nm. The research results show that Tm:CaYAlO4 is an excellent gain medium for femtosecond pulse generation at 2um wavelength.
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