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Register a new userElectronic transport in a two-dimensional superlattice engineered via self-assembled nanostructures
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Nanoscience offers a unique opportunity to design modern materials from the bottom up, via low-cost, solution processed assembly of nanoscale building blocks. These systems promise electronic band structure engineering using not only the nanoscale structural modulation, but also the mesoscale spatial patterning, although experimental realization of the latter has been challenging. Here we design and fabricate a new type of artificial solid by stacking graphene on a self-assembled, nearly periodic array of nanospheres, and experimentally observe superlattice miniband effects. We find conductance dips at commensurate fillings of charge carriers per superlattice unit cell, which are key features of minibands that are induced by the quasi-periodic deformation of the graphene lattice. These dips become stronger when the lattice strain is larger. Using a tight-binding model, we simulate the effect of lattice deformation as a parameter affecting the inter-atomic hopping integral, and confirm the superlattice transport behavior. This 2D material-nanoparticle heterostructure enables facile band structure engineering via self-assembly, promising for large area electronics and optoelectronics applications.
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Superconducting triangular Nb wire networks with high normal-state resistance are fabricated by using a negative tone hydrogen silsesquioxane (HSQ) resist. Robust magnetoresistance oscillations are observed up to high magnetic fields and maintained at low temperatures, due to the eective reduction of wire dimensions. Well-defined dips appear at integral and rational values (1/2, 1/3, 1/4) of the reduced flux f = Phi/Phi_0, which is the first observation in the triangular wire networks. These results are well consistent with theoretical calculations for the reduced critical temperature as a function of f.
A fluctuation theory is presented for the nonequilibrium second order phase transition in a quasi-two-dimensional electron gas. A transverse (with respect to the current through the sample) spontaneous electric field as an order parameter and a driving longitudinal field as a control parameter are used. In addition to the earlier results, the intrawell dynamics is taken into account. Non-monotonous behavior of the periodic signal gain as a function of the noise power (stochastic resonance) is predicted.
Experimental realization of two-dimensional boron sheets was reported very recently by Feng et. al. using molecular beam epitaxy on silver (111) surface. These boron sheets possess promising electronic and transport properties. We performed the density functional theory (DFT) calculation to see the stability of two $beta_{12}$ and $chi$ polymorphs of boron under strain and further studied electronic and transport properties. We verified the directional dependency in electron transport properties in these two boron polymorphs. Here we report tunable anisotropic transport properties of the borophenes. We also investigated current-voltage characteristics in low bias regime after applying strain on these systems to see how this external strain affects the anisotropy of current.
Coulomb interactions play an essential role in atomically-thin materials. On one hand, they are strong and long-ranged in layered systems due to the lack of environmental screening. On the other hand, they can be efficiently tuned by means of surrounding dielectric materials. Thus all physical properties which decisively depend on the exact structure of the electronic interactions can be in principle efficiently controlled and manipulated from the outside via Coulomb engineering. Here, we show how this concept can be used to create fundamentally new plasmonic waveguides in metallic layered materials. We discuss in detail how dielectrically structured environments can be utilized to non-invasively confine plasmonic excitations in an otherwise homogeneous metallic 2D system by modification of its many-body interactions. We define optimal energy ranges for this mechanism and demonstrate plasmonic confinement within several nanometers. In contrast to conventional functionalization mechanisms, this scheme relies on a purely many-body concept and does not involve any direct modifications to the active material itself.
The four-level exciton/biexciton system of a single semiconductor quantum dot acts as a two qubit register. We experimentally demonstrate an exciton-biexciton Rabi rotation conditional on the initial exciton spin in a single InGaAs/GaAs dot. This forms the basis of an optically gated two-qubit controlled-rotation (CROT) quantum logic operation where an arbitrary exciton spin is selected as the target qubit using the polarization of the control laser.
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