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Register a new userCooperative elastic fluctuations provide tuning of the metal-insulator transition
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Added by
Gian Guzm\\'an-Verri G
Publication date
2017
fields
Physics
and research's language is
English
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Metal to insulator transitions (MITs) driven by strong electronic correlations are common in condensed matter systems, and are associated with some of the most remarkable collective phenomena in solids, including superconductivity and magnetism. Tuning and control of the transition holds the promise of novel, low power, ultrafast electronics, but the relative roles of doping, chemistry, elastic strain and other applied fields has made systematic understanding difficult to obtain. Here we point out that existing data on tuning of the MIT in perovskite transition metal oxides through ionic size effects provides evidence of systematic and large effects on the phase transition due to dynamical fluctuations of the elastic strain, which have been usually neglected. This is illustrated by a simple yet quantitative statistical mechanical calculation in a model that incorporates cooperative lattice distortions coupled to the electronic degrees of freedom. We reproduce the observed dependence of the transition temperature on cation radius in the well-studied manganite and nickelate materials. Since the elastic couplings are generically quite strong, these conclusions will broadly generalize to all MITs that couple to a change in lattice symmetry.
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We employed {it in-situ} pulsed laser deposition (PLD) and angle-resolved photoemission spectroscopy (ARPES) to investigate the mechanism of the metal-insulator transition (MIT) in NdNiO$_3$ (NNO) thin films, grown on NdGaO$_3$(110) and LaAlO$_3$(100) substrates. In the metallic phase, we observe three dimensional hole and electron Fermi surface (FS) pockets formed from strongly renormalized bands with well-defined quasiparticles. Upon cooling across the MIT in NNO/NGO sample, the quasiparticles lose coherence via a spectral weight transfer from near the Fermi level to localized states forming at higher binding energies. In the case of NNO/LAO, the bands are apparently shifted upward with an additional holelike pocket forming at the corner of the Brillouin zone. We find that the renormalization effects are strongly anisotropic and are stronger in NNO/NGO than NNO/LAO. Our study reveals that substrate-induced strain tunes the crystal field splitting, which changes the FS properties, nesting conditions, and spin-fluctuation strength, and thereby controls the MIT via the formation of an electronic order parameter with Q$_{AF}sim$(1/4, 1/4, 1/4$pm$$delta$).
The metal-insulator transition (MIT) is one of the most dramatic manifestations of electron correlations in materials. Various mechanisms producing MITs have been extensively considered, including the Mott (electron localization via Coulomb repulsion), Anderson (localization via disorder) and Peierls (localization via distortion of a periodic 1D lattice). One additional route to a MIT proposed by Slater, in which long-range magnetic order in a three dimensional system drives the MIT, has received relatively little attention. Using neutron and X-ray scattering we show that the MIT in NaOsO3 is coincident with the onset of long-range commensurate three dimensional magnetic order. Whilst candidate materials have been suggested, our experimental methodology allows the first definitive demonstration of the long predicted Slater MIT. We discuss our results in the light of recent reports of a Mott spin-orbit insulating state in other 5d oxides.
Measurements of conductance $G$ on short, wide, high-mobility Si-MOSFETs reveal both a two-dimensional metal-insulator transition (MIT) at moderate temperatures (1 $<~ T <$ 4~K) and mesoscopic fluctuations of the conductance at low temperatures ($T~ <$ 1~K). Both were studied as a function of chemical potential (carrier concentration $n_s$) controlled by gate voltage ($V_g$) and magnetic field $B$ near the MIT. Fourier analysis of the low temperature fluctuations reveals several fluctuation scales in $V_g$ that vary non-monotonically near the MIT. At higher temperatures, $G(V_g,B)$ is similar to large FETs and exhibits a MIT. All of the observations support the suggestion that the MIT is driven by Coulomb interactions among the carriers.
For most metals, increasing temperature (T) or disorder will quicken electron scattering. This hypothesis informs the Drude model of electronic conductivity. However, for so-called bad metals this predicts scattering times so short as to conflict with Heisenbergs uncertainty principle. Here we introduce the rare-earth nickelates (RNiO_3, R = rare earth) as a class of bad metals. We study SmNiO_3 thin films using infrared spectroscopy while varying T and disorder. We show that the interaction between lattice distortions and Ni-O bond covalence explains both the bad metal conduction and the insulator-metal transition in the nickelates by shifting spectral weight over the large energy scale established by the Ni-O orbital interaction, thus enabling very low sigma while preserving the Drude model and without violating the uncertainty principle.
The pressure-induced insulator to metal transition (IMT) of layered magnetic nickel phosphorous tri-sulfide NiPS3 was studied in-situ under quasi-uniaxial conditions by means of electrical resistance (R) and X-ray diffraction (XRD) measurements. This sluggish transition is shown to occur at 35 GPa. Transport measurements show no evidence of superconductivity to the lowest measured temperature (~ 2 K). The structure results presented here differ from earlier in-situ work that subjected the sample to a different pressure state, suggesting that in NiPS3 the phase stability fields are highly dependent on strain. It is suggested that careful control of the strain is essential when studying the electronic and magnetic properties of layered van der Waals solids.
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