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Register a new userSuppression of magnetic excitations near the surface of the topological Kondo insulator SmB6
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We present a detailed investigation of the temperature and depth dependence of the magnetic properties of 3D topological Kondo insulator SmB6 , in particular near its surface. We find that local magnetic field fluctuations detected in the bulk are suppressed rapidly with decreasing depths, disappearing almost completely at the surface. We attribute the magnetic excitations to spin excitons in bulk SmB6 , which produce local magnetic fields of about ~1.8 mT fluctuating on a time scale of ~60 ns. We find that the excitonic fluctuations are suppressed when approaching the surface on a length scale of 40-90 nm, accompanied by a small enhancement in static magnetic fields. We associate this length scale to the size of the excitonic state.
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Bulk and surface state contributions to the electrical resistance of single-crystal samples of the topological Kondo insulator compound SmB6 are investigated as a function of crystal thickness and surface charge density, the latter tuned by ionic liquid gating with electrodes patterned in a Corbino disk geometry on a single surface. By separately tuning bulk and surface conduction channels, we show conclusive evidence for a model with an insulating bulk and metallic surface states, with a crossover temperature that depends solely on the relative contributions of each conduction channel. The surface conductance, on the order of 100 e^2/h and electron-like, exhibits a field-effect mobility of 133 cm^2/V/s and a large carrier density of ~2x10^{14}/cm^2, in good agreement with recent photoemission results. With the ability to gate-modulate surface conduction by more than 25%, this approach provides promise for both fundamental and applied studies of gate-tuned devices structured on bulk crystal samples.
SmB6 is a strongly correlated mixed-valence Kondo insulator with a newly discovered surface state, proposed to be of non-trivial topological origin. However, the surface state dominates electrical conduction only below T* ~ 4 K limiting its scientific investigation and device application. Here, we report the enhancement of T * in SmB6 under the application of tensile strain. With 0.7% tensile strain we report surface dominated conduction at up to a temperature of 240 K, persisting even after the strain has been removed. This can be explained in the framework of strain-tuned temporal and spatial fluctuations of f-electron configurations, which might be generally applied to other mixed-valence materials. We note that this amount of strain can be indued in epitaxial SmB6 films via substrate in potential device applications.
Undoped and slightly Eu-doped SmB6 show the opening of a gap with decreasing temperature below ~150 K. The spectral shapes near the Fermi level (EF) at 15 K have shown strong increase in intensity of a peak at a binding energy (EB) of around 12 meV with decreasing the photon energy (hn) from 17 eV down to 7 eV. Angle resolved spectra of SmB6 measured at hn = 35 eV just after the in-situ cleavage showed clear dispersions of several bands in the EB region from EF to 4 eV. Spin-polarized photoelectron spectra were then measured at 12 K and light incidence angle of ~50 deg. In contrast to the lack of spin polarization for the linearly polarized light excitation, clear spin polarization was observed in the case of circularly polarized light excitation. The two prominent peaks at EB~12 and ~150 meV have shown opposite signs of spin polarization which are reversed when the helicity of the light is reversed. The sign and the magnitude of spin- polarization are consistent with a theoretical prediction for the 6H5/2 and 6H7/2 states.
The Kondo insulator compound SmB6 has emerged as a strong candidate for the realization of a topologically nontrivial state in a strongly correlated system, a topological Kondo insulator, which can be a novel platform for investigating the interplay between nontrivial topology and emergent correlation driven phenomena in solid state systems. Electronic transport measurements on this material, however, so far showed only the robust surface dominated charge conduction at low temperatures, lacking evidence of its connection to the topological nature by showing, for example, spin polarization due to spin momentum locking. Here, we find evidence for surface state spin polarization by electrical detection of a current induced spin chemical potential difference on the surface of a SmB6 single crystal. We clearly observe a surface dominated spin voltage, which is proportional to the projection of the spin polarization onto the contact magnetization, is determined by the direction and magnitude of the charge current and is strongly temperature dependent due to the crossover from surface to bulk conduction. We estimate the lower bound of the surface state net spin polarization as 15 percent based on the quantum transport model providing direct evidence that SmB6 supports metallic spin helical surface states.
The Kondo insulator SmB6 has long been known to exhibit low temperature transport anomalies whose origin is of great interest. Here we uniquely access the surface electronic structure of the anomalous transport regime by combining state-of-the-art laser- and synchrotron-based angle-resolved photoemission techniques. We observe clear in-gap states (up to 4 meV), whose temperature dependence is contingent upon the Kondo gap formation. In addition, our observed in-gap Fermi surface oddness tied with the Kramers points topology, their coexistence with the two-dimensional transport anomaly in the Kondo hybridization regime, as well as their robustness against thermal recycling, taken together, collectively provide by-far the strongest evidence for protected surface metallicity with a Fermi surface whose topology is consistent with the theoretically predicted topological surface Fermi surface (TSS). Our observations of systematic surface electronic structure provide the fundamental electronic parameters for the anomalous Kondo ground state of the correlated electron material SmB6.
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