Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userMicrowave-Induced Oscillations in the Magnetocapacitance: Direct Evidence for Non-equilibrium Occupation of Electronic States
64
0
0.0
(
0
)
Added by
Aleksander Kapustin
Publication date
2016
fields
Physics
and research's language is
English
Ask ChatGPT about the research
No Arabic abstract
In a two-dimensional electron system, microwave radiation may induce giant resistance oscillations. Their origin has been debated controversially and numerous mechanisms based on very different physical phenomena have been invoked. However none of them have been unambiguously experimentally identified, since they produce similar effects in transport studies. The capacitance of a two-subband system is sensitive to a redistribution of electrons over energy states, since it entails a shift of the electron charge perpendicular to the plane. In such a system microwave induced magnetocapacitance oscillations have been observed. They can only be accounted for by an electron distribution function oscillating with energy due to Landau quantization, one of the quantum mechanisms proposed for the resistance oscillations.
rate research
Read More
We develop a systematic theory of microwave-induced oscillations in magnetoresistivity of a 2D electron gas in the vicinity of fractional harmonics of the cyclotron resonance, observed in recent experiments. We show that in the limit of well-separated Landau levels the effect is dominated by the multiphoton inelastic mechanism. At moderate magnetic field, two single-photon mechanisms become important. One of them is due to resonant series of multiple single-photon transitions, while the other originates from microwave-induced sidebands in the density of states of disorder-broadened Landau levels.
We develop a systematic theory of microwave-induced oscillations in magnetoresistivity of a 2D electron gas in the vicinity of fractional harmonics of the cyclotron resonance, observed in recent experiments. We show that in the limit of well-separated Landau levels the effect is dominated by a change of the distribution function induced by multiphoton processes. At moderate magnetic field, a single-photon mechanism originating from the microwave-induced sidebands in the density of states of disorder-broadened Landau levels becomes important.
We report the observation of inverse-magnetic-field-periodic, radiation-induced magnetoresistance oscillations in GaAs/AlGaAs heterostructures prepared in W. Wegscheiders group, compare their characteristics with similar oscillations in V. Umanskys material, and describe the lineshape variation vs. the radiation power, $P$, in the two systems. We find that the radiation-induced oscillatory $Delta R_{xx}$, in both materials, can be described by $Delta R_{xx} = -A exp(-lambda/B)sin(2 pi F/B)$, where $A$ is the amplitude, $lambda$ is the damping parameter, and $F$ is the oscillation frequency. Both $lambda$ and $F$ turn out to be insensitive to $P$. On the other hand, $A$ grows nonlinearly with $P$.
We develop a theory of magnetooscillations in the photoconductivity of a two-dimensional electron gas observed in recent experiments. The effect is governed by a change of the electron distribution function induced by the microwave radiation. We analyze a nonlinearity with respect to both the dc field and the microwave power, as well as the temperature dependence determined by the inelastic relaxation rate.
Since the discovery of extremely large non-saturating magnetoresistance (MR) in WTe2, much effort has been devoted to understanding the underlying mechanism, which is still under debate. Here, we explicitly identify the dominant physical origin of the large non-saturating MR through in-situ tuning of the magneto-transport properties in thin WTe2 film. With an electrostatic doping approach, we observed a non-monotonic gate dependence of the MR. The MR reaches a maximum (10600%) in thin WTe2 film at certain gate voltage where electron and hole concentrations are balanced, indicating that the charge compensation is the dominant mechanism of the observed large MR. Besides, we show that the temperature dependent magnetoresistance exhibits similar tendency with the carrier mobility when the charge compensation is retained, revealing that distinct scattering mechanisms may be at play for the temperature dependence of magneto-transport properties. Our work would be helpful for understanding mechanism of the large MR in other nonmagnetic materials and offers an avenue for achieving large MR in the non-magnetic materials with electron-hole pockets.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
