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Register a new userMicro-beam and pulsed laser beam techniques for the micro-fabrication of diamond surface and bulk structures
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Micro-fabrication in diamond is involved in a wide set of emerging technologies, exploiting the exceptional characteristics of diamond for application in bio-physics, photonics, radiation detection. Micro ion-beam irradiation and pulsed laser irradiation are complementary techniques, which permit the implementation of complex geometries, by modification and functionalization of surface and/or bulk material, modifying the optical, electrical and mechanical characteristics of the material. In this article we summarize the work done in Florence (Italy) concerning ion beam and pulsed laser beam micro-fabrication in diamond.
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We report on the fabrication and characterization of a single-crystal diamond device for the electrical stimula- tion of light emission from nitrogen-vacancy (NV0) and other defect-related centers. Pairs of sub-superficial graphitic micro-electrodes embedded in insulating diamond were fabricated by a 6 MeV C3+ micro-beam irra- diation followed by thermal annealing. A photoluminescence (PL) characterization evidenced a low radiation damage concentration in the inter-electrode gap region, which did not significantly affect the PL features domi- nated by NV centers. The operation of the device in electroluminescence (EL) regime was investigated by ap- plying a bias voltage at the graphitic electrodes, resulting in the injection of a high excitation current above a threshold voltage (~300V), which effectively stimulated an intense EL emission from NV0 centers. In addition, we report on the new observation of two additional sharp EL emission lines (at 563 nm and 580 nm) related to interstitial defects formed during MeV ion beam fabrication.
A micro-pressure sensor with an isosceles trapezoidal beam-membrane (ITBM) is proposed in this paper, consisting of a square silicon membrane, four isosceles trapezoidal beams and four piezoresistors.To investigate how the elastic silicon membrane affects pressure sensitive characteristics, a simulation models based on ANSYS 15.0 software were used to analyze the effect of structural dimension on characteristics of pressure sensor. According to that, the chips of micro-pressure sensors were fabricated by micro-electro-mechanical system (MEMS) technology on a silicon wafer with <100> orientation.The experimental results show that the proposed sensor achieves a better sensitivity of 9.64 mV/kPa and an excellent linearity of 0.09%F.S. in the range of 0~3.0 kPa at room temperature and a supply voltage of 5.0 V,with a super temperature coefficient of sensitivity(TCS) about - 684 ppm/K from 235.15 K to 360.15 K and low pressure measurement less than 3.0 kPa.
In an ideal 3D topological insulator (TI), the bulk is insulating and the surface conducting due to the existence of metallic states that are localized on the surface; these are the topological surface states. Quaternary Bi-based compounds of Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$ with finely-tuned bulk stoichiometries are good candidates for realizing ideal 3D TI behavior due to their bulk insulating character. However, despite its insulating bulk in transport experiments, the surface region of Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$ crystals cleaved in ultrahigh vacuum also exhibits occupied states originating from the bulk conduction band. This is due to adsorbate-induced downward band-bending, a phenomenon known from other Bi-based 3D TIs. Here we show, using angle-resolved photoemission, how an EUV light beam of moderate flux can be used to exclude these topologically trivial states from the Fermi level of Bi$_{1.46}$Sb$_{0.54}$Te$_{1.7}$Se$_{1.3}$ single crystals, thereby re-establishing the purely topological character of the low lying electronic states of the system. We furthermore prove that this process is highly local in nature in this bulk-insulating TI, and are thus able to imprint structures in the spatial energy landscape at the surface. We illustrate this by `writing micron-sized letters in the Dirac point energy of the system.
Manipulation of light-beams with subwavelenth metallic devices has motivated intensive studies, following the discovery of extraordinary transmission of electromagnetic waves through sub-wavelength apertures in thin noble-metal films. The propagation of light in these holes can be investigated at greately improved spatial resolution by means of focused electron-beams. Here we demonstrate direct e-beam excitation of radiative cavity modes well below the surface plasmon (SP) frequency, of isolated rectangular holes in gold films, illuminating the hotly debated phenomenon of the extraordinary optical transmission through subwavelength holes. The exceptionally long range e-beam interaction with the metal through the vacuum, involving electromagnetic excitations within the light cone, is allowed by momentum conservation breakdown along the e-beam axis. Two types of lowlying excited modes are revealed: radiative cavity modes which are nearly unaffected by SPs, and SP polariton modes with waveguide character in the near field region of the slit walls, which in spite of the strong hybridization preserve the waveguide cutoff frequencies and symmetry characteristics.
This paper presents experimental data and analysis of the structural damage caused by swift-heavy ion irradiation of single-crystal diamond. The patterned buried structural damage is shown to generate, via swelling, a mirror-pattern on the sample surface, which remains largely damage-free. While extensive results are available for light ion implantations, this effect is reported here for the first time in the heavy ion regime, where a completely different range of input parameters (in terms of ion species, energy, stopping power, etc.) is available for customized irradiation. The chosen ion species are Au and Br, in the energy range 10-40 MeV. The observed patterns, as characterized by profilometry and atomic force microscopy, are reported in a series of model experiments, which show swelling patterns ranging from a few nm to above 200 nm. Moreover, a systematic phenomenological modelling is presented, in which surface swelling measurements are correlated to buried crystal damage. A comparison is made with data for light ion implantations, showing good compatibility with the proposed models. The modelling presented in this work can be useful for the design and realization of micropatterned surfaces in single crystal diamond, allowing to generate highly customized structures by combining appropriately chosen irradiation parameters and masks.
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