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Register a new userOptically Detected Ferromagnetic Resonance in Metallic Ferromagnets via Nitrogen Vacancy Centers in Diamond
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We report quantitative measurements of optically detected ferromagnetic resonance (ODFMR) of ferromagnetic thin films that use nitrogen-vacancy (NV) centers in diamonds to transduce FMR into a fluorescence intensity variation. To uncover the mechanism responsible for these signals, we study ODFMR as we 1) vary the separation of the NV centers from the ferromagnet (FM), 2) record the NV center longitudinal relaxation time $T_1$ during FMR, and 3) vary the material properties of the FM. Based on the results, we propose the following mechanism for ODFMR. Decay and scattering of the driven, uniform FMR mode results in spinwaves that produce fluctuating dipolar fields in a spectrum of frequencies. When the spinwave spectrum overlaps the NV center ground-state spin resonance frequencies, the dipolar fields from these resonant spinwaves relax the NV center spins, resulting in an ODFMR signal. These results lay the foundation for an approach to NV center spin relaxometry to study FM dynamics without the constraint of directly matching the NV center spin-transition frequency to the magnetic system of interest, thus enabling an alternate modality for scanned-probe magnetic microscopy that can sense ferromagnetic resonance with nanoscale resolution.
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We give instructions for the construction and operation of a simple apparatus for performing optically detected magnetic resonance measurements on diamond samples containing high concentrations of nitrogen-vacancy (NV) centers. Each NV center has a spin degree of freedom that can be manipulated and monitored by a combination of visible and microwave radiation. We observe Zeeman shifts in the presence of small external magnetic fields and describe a simple method to optically measure magnetic field strengths with a spatial resolution of several microns. The activities described are suitable for use in an advanced undergraduate lab course, powerfully connecting core quantum concepts to cutting edge applications. An even simpler setup, appropriate for use in more introductory settings, is also presented.
Neutral silicon vacancy (SiV0) centers in diamond are promising candidates for quantum networks because of their excellent optical properties and long spin coherence times. However, spin-dependent fluorescence in such defects has been elusive due to poor understanding of the excited state fine structure and limited off-resonant spin polarization. Here we report the realization of optically detected magnetic resonance and coherent control of SiV0 centers at cryogenic temperatures, enabled by efficient optical spin polarization via previously unreported higher-lying excited states. We assign these states as bound exciton states using group theory and density functional theory. These bound exciton states enable new control schemes for SiV0 as well as other emerging defect systems.
Diamond membrane devices containing optically coherent nitrogen-vacancy (NV) centers are key to enable novel cryogenic experiments such as optical ground-state cooling of hybrid spin-mechanical systems and efficient entanglement distribution in quantum networks. Here, we report on the fabrication of a (3.4 $pm$ 0.2) {mu}m thin, smooth (surface roughness r$_q$ < 0.4 nm over an area of 20 {mu}m by 30 {mu}m diamond membrane containing individually resolvable, narrow linewidth (< 100 MHz) NV centers. We fabricate this sample via a combination of high energy electron irradiation, high temperature annealing, and an optimized etching sequence found via a systematic study of the diamond surface evolution on the microscopic level in different etch chemistries. While our particular device dimensions are optimized for cavity-enhanced entanglement generation between distant NV centers in open, tuneable micro-cavities, our results have implications for a broad range of quantum experiments that require the combination of narrow optical transitions and {mu}m-scale device geometry.
We use magnetic-field-dependent features in the photoluminescence of negatively charged nitrogen-vacancy centers to measure magnetic fields without the use of microwaves. In particular, we present a magnetometer based on the level anti-crossing in the triplet ground state at 102.4 mT with a demonstrated noise floor of 6 nT/$sqrt{text{Hz}}$, limited by the intensity noise of the laser and the performance of the background-field power supply. The technique presented here can be useful in applications where the sensor is placed closed to conductive materials, e.g. magnetic induction tomography or magnetic field mapping, and in remote-sensing applications since principally no electrical access is needed.
A study of the photophysical properties of nitrogen-vacancy (NV) color centers in diamond nanocrystals of size of 50~nm or below is carried out by means of second-order time-intensity photon correlation and cross-correlation measurements as a function of the excitation power for both pure charge states, neutral and negatively charged, as well as for the photochromic state, where the center switches between both states at any power. A dedicated three-level model implying a shelving level is developed to extract the relevant photophysical parameters coupling all three levels. Our analysis confirms the very existence of the shelving level for the neutral NV center. It is found that it plays a negligible role on the photophysics of this center, whereas it is responsible for an increasing photon bunching behavior of the negative NV center with increasing power. From the photophysical parameters, we infer a quantum efficiency for both centers, showing that it remains close to unity for the neutral center over the entire power range, whereas it drops with increasing power from near unity to approximately 0.5 for the negative center. The photophysics of the photochromic center reveals a rich phenomenology that is to a large extent dominated by that of the negative state, in agreement with the excess charge release of the negative center being much slower than the photon emission process.
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