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Register a new userAccurate determination of the valence band edge in hard x-ray photoemission spectra using GW theory
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We introduce a new method for determining accurate values of the valence-band maximum in x-ray photoemission spectra. Specifically, we align the sharpest peak in the valence-band region of the experimental spectrum with the corresponding feature of a theoretical valence-band density of states curve from ab initio GW theory calculations. This method is particularly useful for soft and hard x-ray photoemission studies of materials with a mixture of valence-band characters, where strong matrix element effects can render standard methods for extracting the valence-band maximum unreliable. We apply our method to hydrogen-terminated boron-doped diamond, which is a promising substrate material for novel solar cell devices. By carrying out photoemission experiments with variable light polarizations, we verify the accuracy of our analysis and the general validity of the method.
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Adsorption of organic molecules on well-oriented single crystal coinage metal surfaces fundamentally affects the energy distribution curve of ultra-violet photoelectron spectroscopy spectra. New features not present in the spectrum of the pristine metal can be assigned as interface states having some degree of molecule-substrate hybridization. Here it is shown that interface states having molecular orbital character can easily be identified at low binding energy as isolated features above the featureless substrate sp-plateau. On the other hand much care must be taken in assigning adsorbate-induced features when these lie within the d-band spectral region of the substrate. In fact, features often interpreted as characteristic of the molecule-substrate interaction may actually arise from substrate photoelectrons scattered by the adsorbates. This phenomenon is illustrated through a series of examples of noble-metal single-crystal surfaces covered by monolayers of large pi-conjugated organic molecules.
Auger Photoelectron Coincidence Spectroscopy (APECS), in which the Auger spectra is measured in coincidence with the core level photoelectron, is capable of pulling difficult to observe low energy Auger peaks out of a large background due mostly to inelastically scattered valence band (VB) photoelectrons. However the APECS method alone cannot eliminate the background due to valence band photoemission processes in which the initial photon energy is shared by two or more electrons and one of the electrons is in the energy range of the core level photoemission peak. Here we describe an experimental method to determine the contributions from these background processes and apply this method in the case of Copper M3VV Auger spectrum obtained in coincidence with the 3p3/2 photoemission peak. A beam of 200 eV photons was incident on a Cu(100) sample and a series of coincidence measurements were performed using a spectrometer equipped with two cylindrical mirror analyzers (CMAs). One CMA was set at series of fixed energies that ranged between the energy of the core and the VB peaks. The other CMA was scanned over a range corresponding to electrons leaving the surface between 0eV and 70eV. The set of measured spectra were then fit to a parameterized function which was extrapolated to determine the background in the APECS spectra due to multi-electron and inelastic VB photoemission processes. The extrapolated background was subtracted from the APECS spectrum to obtain the spectrum of electrons emitted solely as the result of the Auger process. A comparison of the coincidence spectrum with the same spectrum with background removed shows that in the case of Cu M3VV the background due to the inelastic scattering of VB electrons is negligible in the region of the Auger peak but is more than half the total signal down in the low energy tail of the Auger peak.
The structural, electronic and optical properties of cubic double perovskite BaCoWO6 have been studied. Neutron powder diffraction data is collected on this sample from 6K to 300K. The crystal structure is face centered cubic, space group being Fm3m (No. 225). We did not find evidence for long range magnetic ordering in this system in this temperature range. The band-gap is estimated using Uv-vis spectroscopy. The Co-K edge X-ray absorption (XAFS) spectra of Ba2CoWO6 was analysed together with those Co-foil, which was used as reference compounds. X-ray photoemission spectroscopy (XPS), X-ray absorption near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) studies give the insight of the electronic and structural information on the Co local environment for Ba2CoWO6.
The heterostructure consisting of the Mott insulator LaVO$_3$ and the band insulator SrTiO$_3$ is considered a promising candidate for future photovoltaic applications. Not only does the (direct) excitation gap of LaVO$_3$ match well the solar spectrum, but its correlated nature and predicted built-in potential, owing to the non-polar/polar interface when integrated with SrTiO$_3$, also offer remarkable advantages over conventional solar cells. However, experimental data beyond the observation of a thickness-dependent metal-insulator transition is scarce and a profound, microscopic understanding of the electronic properties is still lacking. By means of soft and hard X-ray photoemission spectroscopy as well as resistivity and Hall effect measurements we study the electrical properties, band bending, and band alignment of LaVO$_3$/SrTiO$_3$ heterostructures. We find a critical LaVO$_3$ thickness of five unit cells, confinement of the conducting electrons to exclusively Ti 3$d$ states at the interface, and a potential gradient in the film. From these findings we conclude on electronic reconstruction as the driving mechanism for the formation of the metallic interface in LaVO$_3$/SrTiO$_3$.
IV-VI semiconductor SnSe has been known as the material with record high thermoelectric performance.The multiple close-to-degenerate valence bands in the electronic band structure has been one of the key factors contributing to the high power factor and thus figure of merit in the SnSe single crystal. To date, there have been primarily theoretical calculations of this particular electronic band structure. In this paper, however, using angle-resolved photoemission spectroscopy, we perform a systematic investigation of the electronic structure of SnSe. We directly observe three predicted hole bands with small energy differences between their band tops and relatively small in-plane effective masses, in good agreement with the ab initio calculations and critical for the enhancement of the Seebeck coefficient while keeping high electrical conductivity. Our results reveal the complete band structure of SnSe and help to provide a deeper understanding of the electronic origin of the excellent thermoelectric performances in SnSe.
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