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Register a new userCharge-noise-insensitive gate operations for always-on, exchange-only qubits
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We introduce an always-on, exchange-only qubit made up of three localized semiconductor spins that offers a true sweet spot to fluctuations of the quantum dot energy levels. Both single- and two-qubit gate operations can be performed using only exchange pulses while maintaining this sweet spot. We show how to interconvert this qubit to other three-spin encoded qubits as a new resource for quantum computation and communication.
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We present a scheme for correcting for crosstalk- and noise-induced errors in exchange-coupled singlet-triplet semiconductor double quantum dot qubits. While exchange coupling allows the coupling strength to be controlled independently of the intraqubit exchange couplings, there is also the problem of leakage, which must be addressed. We show that, if a large magnetic field difference is present between the two qubits, leakage is suppressed. We then develop pulse sequences that correct for crosstalk- and noise-induced errors and present parameters describing them for the 24 Clifford gates. We determine the infidelity for both the uncorrected and corrected gates as a function of the error-inducing terms and show that our corrected pulse sequences reduce the error by several orders of magnitude.
Resonant exchange qubits are a promising addition to the family of experimentally implemented encodings of single qubits using semiconductor quantum dots. We have shown previously that it ought to be straightforward to perform a CPHASE gate between two resonant exchange qubits with a single exchange pulse. This approach uses energy gaps to suppress leakage rather than conventional pulse sequences. In this paper we present analysis and simulations of our proposed two-qubit gate subject to charge and Overhauser field noise at levels observed in current experiments. Our main result is that we expect implementations of our two-qubit gate to achieve high fidelities, with errors at the percent level and gate times comparable to single-qubit operations. As such, exchange-coupled resonant exchange qubits remain an attractive approach for quantum computing.
Optimal working points or sweet spots have arisen as an important tool for mitigating charge noise in quantum dot logical spin qubits. The exchange-only qubit provides an ideal system for studying this effect because $Z$ rotations are performed directly at the sweet spot, while $X$ rotations are not. Here for the first time we quantify the ability of the sweet spot to mitigate charge noise by treating $X$ and $Z$ rotations on an equal footing. Specifically, we optimize $X$ rotations and determine an upper bound on their fidelity. We find that sweet spots offer a fidelity improvement factor of at least 20 for typical GaAs devices, and more for Si devices.
Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an exchange-only Si qubit device platform that combines the throughput of CMOS-like wafer processing with the versatility of direct-write lithography. The technology, which we coin SLEDGE, features dot-shaped gates that are patterned simultaneously on one topographical plane and subsequently connected by vias to interconnect metal lines. The process design enables non-trivial layouts as well as flexibility in gate dimensions, material selection, and additional device features such as for rf qubit control. We show that the SLEDGE process has reduced electrostatic disorder with respect to traditional overlapping gate devices with lift-off metallization, and we present spin coherent exchange oscillations and single qubit blind randomized benchmarking data.
Quantum computation requires high-fidelity single-qubit and two-qubit gates on a scalable platform. Silicon spin qubits are a promising platform toward realization of this goal. In this paper we show how to perform single-qubit and CZ gates in a linear chain of three spin qubits with always-on exchange coupling, which is relevant for certain dot- and donor-based silicon devices. We also show how to make the CZ gate robust against both charge noise and pulse length error using a two-tone pulse shaping method. The robust pulse maintains a fidelity of 99.99% at 3.5% fluctuations in exchange or pulse amplitude, which is an improvement over the uncorrected pulses where this fidelity can only be maintained for fluctuations in exchange up to 2% or up to 0.2% in amplitude.
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