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Register a new userTopological Critical Point and Resistivity Anomaly in HfTe5
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There is a long-standing confusion concerning the physical origin of the anomalous resistivity peak in transition metal pentatelluride HfTe5. Several mechanisms, like the formation of charge density wave or polaron, have been proposed, but so far no conclusive evidence has been presented. In this work, we investigate the unusual temperature dependence of magneto-transport properties in HfTe5. We find that a three dimensional topological Dirac semimetal state emerges only at around Tp (at which the resistivity shows a pronounced peak), as manifested by a large negative magnetoresistance. This accidental Dirac semimetal state mediates the topological quantum phase transition between the two distinct weak and strong topological insulator phases in HfTe5. Our work not only provides the first evidence of a temperature-induced critical topological phase transition in HfTe5, but also gives a reasonable explanation on the long-lasting question.
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Resistivity anomaly, a sharp peak of resistivity at finite temperatures, in the transition-metal pentatellurides ZrTe5 and HfTe5 was observed four decades ago, and more exotic and anomalous behaviors of electric and thermoelectric transport were revealed recent years. Here we present a theory of Dirac polarons, composed by massive Dirac electrons and holes in an encircling cloud of lattice displacements or phonons at finite temperatures. The chemical potential of Dirac polarons sweeps the band gap of the topological band structure by increasing the temperature, leading to the resistivity anomaly. Formation of a nearly neutral state of Dirac polarons accounts for the anomalous behaviors of the electric and thermoelectric resistivity.
HfTe5 is predicted to be a promising platform for studying topological phases. Here through an electrical transport study, we present the first observation of chiral anomaly and ultrahigh mobility in HfTe5 crystals. Negative magneto-resistivity in HfTe5 is observed when the external magnetic and electrical fields are parallel (B//E) and quickly disappears once B deviates from the direction of E. Quantitative fitting further confirms the chiral anomaly as the underlying physics. Moreover, by analyzing the conductivity tensors of longitudinal and Hall traces, ultrahigh mobility and ultralow carrier density are revealed in HfTe5, which paves the way for potential electronic applications.
Discrete scale invariance (DSI) is a phenomenon featuring intriguing log-periodicity which can be rarely observed in quantum systems. Here we report the log-periodic quantum oscillations in the magnetoresistance (MR) and the Hall traces of HfTe5 crystals, which reveals the appearance of DSI. The oscillations show the same logB-periodicity in the behavior of MR and Hall, indicating an overall effect of the DSI on the transport properties. Moreover, the DSI feature in the Hall resistance signals its close relation to the carriers. Combined with theoretical simulations, we further clarify the origin of the log-periodic oscillations and the DSI in the topological materials. Our work evidences the universality of the DSI in the Dirac materials and paves way for the full understanding of the novel phenomenon.
The topological edge states of two-dimensional topological insulators with large energy gap furnish ideal conduction channels for dissipationless current transport. Transition metal tellurides XTe5 (X=Zr, Hf) are theoretically predicted to be large-gap two-dimensional topological insulators and the experimental observations of their bulk insulating gap and in-gap edge states have been reported, but the topological nature of these edge states still remains to be further elucidated. Here, we report our low temperature scanning tunneling microscopy/spectroscopy study on single crystals of HfTe5. We demonstrate a full energy gap of ~80 meV near the Fermi level on the surface monolayer of HfTe5 and that such insulating energy gap gets filled with finite energy states when measured at the monolayer step edges. Remarkably, such states are absent at the edges of a narrow monolayer strip of one-unit-cell in width but persist at both step edges of a unit-cell wide monolayer groove. These experimental observations strongly indicate that the edge states of HfTe5 monolayers are not trivially caused by translational symmetry breaking, instead they are topological in nature protected by the 2D nontrivial bulk properties.
We measure the temperature-dependent carrier density and resistivity of the topological surface state of thin exfoliated Bi2Se3 in the absence of bulk conduction. When the gate-tuned chemical potential is near or below the Dirac point the carrier density is strongly temperature dependent reflecting thermal activation from the nearby bulk valence band, while above the Dirac point, unipolar n-type surface conduction is observed with negligible thermal activation of bulk carriers. In this regime linear resistivity vs. temperature reflects intrinsic electron-acoustic phonon scattering. Quantitative comparison with a theoretical transport calculation including both phonon and disorder effects gives the ratio of deformation potential to Fermi velocity D/hbarvF = 4.7 {AA}-1. This strong phonon scattering in the Bi2Se3 surface state gives intrinsic limits for the conductivity and charge carrier mobility at room temperature of ~550 {mu}S per surface and ~10,000 cm2/Vs.
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