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Register a new userMicroscopic quantum interference in excitonic condensation of Ta$_2$NiSe$_5$
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The microscopic quantum interference associated with excitonic condensation in Ta$_2$NiSe$_5$ is studied in the BCS-type mean-field approximation. We show that in ultrasonic attenuation the coherence peak appears just below the transition temperature $T_{rm c}$ whereas in NMR spin-lattice relaxation the rate rapidly decreases below $T_{rm c}$; these observations can offer a crucial experimental test for the validity of the excitonic condensation scenario in Ta$_2$NiSe$_5$. We also show that the excitonic condensation manifests itself in a jump of the heat capacity at $T_{rm c}$ as well as in softening of the elastic shear constant, in accordance with the second-order phase transition observed in Ta$_2$NiSe$_5$.
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In the presence of electron-phonon coupling, an excitonic insulator harbors two degenerate ground states described by an Ising-type order parameter. Starting from a microscopic Hamiltonian, we derive the equations of motion for the Ising order parameter in the phonon coupled excitonic insulator Ta$_2$NiSe$_5$ and show that it can be controllably reversed on ultrashort timescales using appropriate laser pulse sequences. Using a combination of theory and time-resolved optical reflectivity measurements, we report evidence of such order parameter reversal in Ta$_2$NiSe$_5$ based on the anomalous behavior of its coherently excited order-parameter-coupled phonons. Our work expands the field of ultrafast order parameter control beyond spin and charge ordered materials.
We analyze the measured optical conductivity spectra using the density-functional-theory-based electronic structure calculation and density-matrix renormalization group calculation of an effective model. We show that, in contrast to a conventional description, the Bose-Einstein condensation of preformed excitons occurs in Ta$_2$NiSe$_5$, despite the fact that a noninteracting band structure is a band-overlap semimetal rather than a small band-gap semiconductor. The system above the transition temperature is therefore not a semimetal, but rather a state of preformed excitons with a finite band gap. A novel insulator state caused by the strong electron-hole attraction is thus established in a real material.
Excitonic insulator (EI) is an intriguing insulating phase of matter, where electrons and holes are bonded into pairs, so called excitons, and form a phase-coherent state via Bose-Einstein Condensation (BEC). Its theoretical concept has been proposed several decades ago, but the followed research is very limited, due to the rare occurrence of EI in natural materials and the lack of manipulating method of excitonic condensation. In this paper, we report the realization of a doping-controlled EI-to-semi-metal transition in Ta$_2$NiSe$_5$ using $in$-$situ$ potassium deposition. Combining with angle-resolved photoemission spectroscopy (ARPES), we delineate the evolution of electronic structure through the EI transition with unprecedented precision. The results not only show that Ta$ _2 $NiSe$ _5 $ (TNS) is an EI originated from a semi-metal non-interacting band structure, but also resolve two sequential transitions, which could be attributed to the phase-decoherence and pair-breaking respectively. Our results unveil the Bardeen-Cooper-Schrieffer (BCS)-BEC crossover behavior of TNS and demonstrate that its band structure and excitonic binding energy can be tuned precisely via alkali-metal deposition. This paves a way for investigations of BCS-BEC crossover phenomena, which could provide insights into the many-body physics in condensed matters and other many-body systems.
The envisioned existence of an excitonic-insulator phase in Ta$_2$NiSe$_5$ has attracted a remarkable interest in this material. The origin of the phase transition in Ta$_2$NiSe$_5$ has been rationalized in terms of crystal symmetries breaking driven by both electronic correlation and lattice distortion. However, the role of structural and electronic effects has yet to be disentangled. Meanwhile its complementary material Ta$_2$NiS$_5$, which has the chalcogen species exchanged with Sulfur, does not show any experimental evidence of an excitonic insulating phase. Here we present a microscopic investigation of the electronic and phononic effects involved in the structural phase transition in Ta$_2$NiSe$_5$ and Ta$_2$NiS$_5$ by means of extensive first-principles calculations for both the high temperature orthorhombic and low-temperature monoclinic crystal phases. We show that, despite the difference in electronic behaviour, the structural origin of the phase transition is the same in the two crystals. In particular our first-principles results suggest, that the high temperature phase of Ta$_2$NiSe$_5$ is metallic and the structural transition to the low-temperature phase leads to the opening of an electronic gap. By analysing the phononic modes of the two phases we single out the mode responsible for the structural transition and demonstrate how this phonon mode strongly couples to the electronic structure. We demonstrate that, despite the very similar phononic behaviour, in Ta$_2$NiS$_5$ the electronic transition from metal to semiconductor is lacking and the crystal remains a semiconductor in both phases. To disentangle the effect of electronic correlation, we calculate electronic bandstructures with increasing accuracy in the electron-electron interaction and find that the structural transition alone allows for the metal to semiconductor phase transition, ...
The three-chain Hubbard model for Ta$_2$NiSe$_5$ known as a candidate material for the excitonic insulator is investigated over the wide range of energy gap $D$ between the two-fold degenerate conduction bands and the nondegenerate valence band including both semiconducting ($D>0$) and semimetallic ($D<0$) cases. In the semimetallic case, the difference of the band degeneracy inevitably causes the imbalance of each Fermi wavenumber, resulting in a remarkable excitonic state characterized by the condensation of excitons with finite center-of-mass momentum $q$, the so-called Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) excitonic state. With decreasing $D$ corresponding to increasing pressure, the obtained excitonic phase diagram shows a crossover from BEC ($Dsimg 0$) to BCS ($Dsiml 0$) regime, and then shows a distinct phase transition at a certain critical value $D_c(<0)$ from the uniform ($q=0$) to the FFLO ($q e 0$) excitonic state, as expected to be observed in Ta$_2$NiSe$_5$ under high pressure.
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