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Register a new user360{deg} Domain Walls: Stability, Magnetic Field and Electric Current Effects
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The formation of 360{deg} magnetic domain walls (360DWs) in Co and Ni80Fe20 thin film wires was demonstrated experimentally for different wire widths, by successively injecting two 180{deg} domain walls (180DWs) into the wire. For narrow wires (less than 50 nm wide for Co), edge roughness prevented the combination of the 180DWs into a 360DW, and for wide wires (200 nm for Co) the 360DW collapsed, but over an intermediate range of wire widths, reproducible 360DW formation occurred. The annihilation and dissociation of 360DWs was demonstrated by applying a magnetic field parallel to the wire, showing that annihilation fields were several times higher than dissociation fields in agreement with micromagnetic modeling. The annihilation of a 360DW by current pulsing was demonstrated.
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The Dzyaloshinskii-Moriya interaction (DMI) causes domain walls in perpendicular magnetized systems to adopt a homochiral configuration by winding in the same direction for both Up-Down and Down-Up walls. The topology of these domain walls is then distinct from the uniformly magnetized state. When two domain walls approach each other and are in close proximity they form winding pairs, stabilized by a dipolar repulsion. This can result in the formation of 360 {deg} stable domain walls, whose stability is directly related to the magnitude of the additional dipolar interaction resulting from the spin structure governed by the DMI. Application of an external magnetic field can overcome the dipolar repulsion of the winding pairs and result in the annihilation of the domain walls, which is studied here in a combined theoretical and experimental effort. We present an extended analytical model that studies the interaction and modification of the dipolar interaction of the domain wall pairs under the application of in-plane and out-of-plane magnetic fields. We realize the experiment in a system of Ta/Co$_{20}$Fe$_{60}$B$_{20}$/MgO and observe that the results are in agreement with the behavior predicted by the analytical model. To compare and understand these results, we perform micromagnetic calculations to gauge the validity of the analytics and also include the full dipolar interactions which are present due to the device geometry. We find that our numerical and experimental studies are in agreement and that the DMI indeed provides an additional stability mechanism against annihilation of DWs, which is potentially useful in dense memory storage applications. Beyond implications for domain walls, understanding the interaction is an important step to understand and control the interaction of many spin structures that contain domain walls, such as skyrmions.
An antiferromagnetic domain wall in a thermal gradient is found to experience a force towards colder regions upon the application of a uniform magnetic field along the easy axis. This force increases with the strength of the applied field and, for sufficiently high values, it overcomes the entropic force the that pushes wall towards the hotter regions. The force is proportional to the thermal gradient and it shows a linear dependence with the net magnetic moment of the domain wall induced by the field. The origin of this force lies on the increase of the domain wall reflectivity due the field-induced sizable break of antiferromagnetic order inside it, which turns it into an efficient barrier for magnons, which transfer linear momentum to the domain wall when they are reflected on it
The precise manipulation of transverse magnetic domain walls in finite/infinite nanowires with artificial defects under the influence of very short spin-polarized current pulses is investigated. We show that for a classical $3d$ ferromagnet material like Nickel, the exact positioning of the domain walls at room temperature is possible only for pulses with very short rise and fall time that move the domain wall reliably to nearest neighboring pinning position. The influence of the shape of the current pulse and of the transient effects on the phase diagram current-pulse length are discussed. We show that large transient effects appear even when $alpha$=$beta$, below a critical value, due to the domain wall distortion caused by the current pulse shape and the presence of the notches. The transient effects can oppose or amplify the spin-transfer torque (STT), depending on the ratio $beta/alpha$. This enlarges the physical comprehension of the DW motion under STT and opens the route to the DW displacement in both directions with unipolar currents.
The shape instability of magnetic domain walls under current is investigated in a ferromagnetic (Ga,Mn)(As,P) film with perpendicular anisotropy. Domain wall motion is driven by the spin transfer torque mechanism. A current density gradient is found either to stabilize domains with walls perpendicular to current lines or to produce finger-like patterns, depending on the domain wall motion direction. The instability mechanism is shown to result from the non-adiabatic contribution of the spin transfer torque mechanism.
The time it takes to accelerate an object from zero to a given velocity depends on the applied force and the environment. If the force ceases, it takes exactly the same time to completely decelerate. A magnetic domain wall (DW) is a topological object that has been observed to follow this behavior. Here we show that acceleration and deceleration times of chiral Neel walls driven by current are different in a system with low damping and moderate Dzyaloshinskii-Moriya (DM) exchange constant. The time needed to accelerate a DW with current via the spin Hall torque is much faster than the time it needs to decelerate once the current is turned off. The deceleration time is defined by the DM exchange constant whereas the acceleration time depends on the spin Hall torque, enabling tunable inertia of chiral DWs. Such unique feature of chiral DWs can be utilized to move and position DWs with lower current, key to the development of storage class memory devices.
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