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Register a new userPhenomenological description of the nonlocal magnetization relaxation in magnonics, spintronics, and domain-wall dynamics
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A phenomenological equation called Landau-Lifshitz-Baryakhtar (LLBar) equation, which could be viewed as the combination of Landau-Lifshitz (LL) equation and an extra exchange damping term, was derived by Baryakhtar using Onsagers relations. We interpret the origin of this exchange damping as nonlocal damping by linking it to the spin current pumping. The LLBar equation is investigated numerically and analytically for the spin wave decay and domain wall motion. Our results show that the lifetime and propagation length of short-wavelength magnons in the presence of nonlocal damping could be much smaller than those given by LL equation. Furthermore, we find that both the domain wall mobility and the Walker breakdown field are strongly influenced by the nonlocal damping.
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Recently, a layered ferroelectric CuInP2Se6 was shown to exhibit domain walls with locally enhanced piezoresponse - a striking departure from the observations of nominally zero piezoresponse in most ferroelectrics. Although it was proposed that such bright domain walls are phase-boundaries between ferri- and antiferroelectrically ordered regions of the materials, the physical mechanisms behind the existence and response of these boundaries remain to be understood. Here, using Landau-Ginzburg-Devonshire phenomenology combined with four sub-lattices model, we describe quantitatively the bright-contrast and dark-contrast domain boundaries between the antiferroelectric, ferroelectric or ferrielectric long-range ordered phases in a layered ferroelectric-antiferroelectric ferroics, such as CuInP2(S1-ySey)6
A phenomenological treatment of domain walls based on the Ginzburg-Landau-Devonshire theory is developed for uniaxial, trigonal ferroelectrics lithium niobate and lithium tantalate. The contributions to the domain wall energy from polarization and strain as a function of orientation are considered. Analytical expressions are developed which are analyzed numerically to determine the minimum polarization, strain, and energy configurations of domain walls. It is found that hexagonal y-walls are preferred over x-walls in both materials. This agrees well with experimental observation of domain geometries in stoichiometric composition crystals.
FeNi films with the stripe domain pattern are prepared by electrodeposition and sputtering methods. The composition, thickness, phase structure, magnetic domain, static magnetic parameters, and quality factor, as well as dynamic properties of the two films, are respectively performed. The results show the spin state in stripe domain were highly dependent on the direction of stripe domain, and the dynamic microwave properties are selectively excited, emerging the dynamic hysteresis, the acoustic mode, optical mode and perpendicular spin standing wave mode response. The results are further studied by micromagnetic simulation to illuminate the spin contribution of stripe domain for the different modes, and finally using the modified resonance equations to descript the microwave excitations of different modes as well as their resonance line width and permeability. The results may provide a method and thought for the possible applications of stripe domain in microwave excitation spintronics.
One fundamental obstacle to efficient ferromagnetic spintronics is magnetic precession, which intrinsically limits the dynamics of magnetic textures, We demonstrate that the domain wall precession fully vanishes with a record mobility when the net angular momentum is compensated (TAC) in DWs driven by spin-orbit torque in a ferrimagnetic GdFeCo/Pt track. We use transverse in-plane fields to reveal the internal structure of DWs and provide a robust and parameter-free measurement of TAC. Our results highlight the mechanism of faster and more efficient dynamics in materials with multiple spin lattices and reduced net angular momentum, promising for high-speed, low-power spintronics applications.
Electric field effect on magnetism is an appealing technique for manipulating the magnetization at a low cost of energy. Here, we show that the local magnetization of the ultra-thin Co film can be switched by just applying a gate electric field without an assist of any external magnetic field or current flow. The local magnetization switching is explained by the nucleation and annihilation of the magnetic domain through the domain wall motion induced by the electric field. Our results lead to external field free and ultra-low energy spintronic applications.
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