We propose a new dark-state cooling method of trapped ion systems in the Lamb-Dicke limit. With application of microwave dressing the ion, we can obtain two electromagnetically induced transparency structures. The heating effects caused by the carrier and the blue sideband transition vanish due to the EIT effects and the final mean phonon numbers can be much less than the recoil limit. Our scheme is robust to fluctuations of microwave power and laser intensities which provides a broad cooling bandwidth to cool motional modes of a linear ion chain. Moreover, it is more suitable to cool four-level ions on a large-scale ion chip.
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