Do you want to publish a course? Click here

Magnetic field induced charge redistribution in disordered graphene double quantum dots

135   0   0.0 ( 0 )
 Added by Kuei-Lin Chiu
 Publication date 2015
  fields Physics
and research's language is English




Ask ChatGPT about the research

We have studied the transport properties of a large graphene double quantum dot under the influence of background disorder potential and magnetic field. At low temperatures, the evolution of the charge-stability diagram as a function of B-field is investigated up to 10 Tesla. Our results indicate that the charging energy of quantum dot is reduced, and hence the size of the dot increases, at high magnetic field. We provide an explanation of our results using a tight-binding model, which describes the charge redistribution in a disordered graphene quantum dot via the formation of Landau levels and edge states. Our model suggests that the tunnel barriers separating different electron/hole puddles in a dot become transparent at high B-fields, resulting in the charge delocalization and reduced charging energy observed experimentally.



rate research

Read More

228 - P. A. Maksym , H. Aoki 2012
The effect of a magnetic field on the charged vacuum is investigated. The field dependence of the energy levels causes jumps in the total vacuum charge that occur whenever an energy level crosses the Fermi level and this leads to re-entrant cycles of vacuum charging and discharging. In atomic systems these effects require astrophysical magnetic fields of around 10^8 T but in graphene with a mass gap they occur in laboratory fields of about 1 T or lower. It is suggested that an electrostatic graphene quantum dot defined by a gate electrode provides a solid state model of the as yet unobserved charged vacuum as well as a model of an atomic system in an extreme astrophysical environment. Phase diagrams are computed to show how the total vacuum charge depends on the confining potential strength and applied magnetic field. In addition the field dependence of the vacuum charge density is investigated and experimental consequences are discussed.
We report measurements on a graphene quantum dot with an integrated graphene charge detector. The quantum dot device consists of a graphene island (diameter approx. 200 nm) connected to source and drain contacts via two narrow graphene constrictions. From Coulomb diamond measurements a charging energy of 4.3 meV is extracted. The charge detector is based on a 45 nm wide graphene nanoribbon placed approx. 60 nm from the island. We show that resonances in the nanoribbon can be used to detect individual charging events on the quantum dot. The charging induced potential change on the quantum dot causes a step-like change of the current in the charge detector. The relative change of the current ranges from 10% up to 60% for detecting individual charging events.
We investigate phonon-induced spin and charge relaxation mediated by spin-orbit and hyperfine interactions for a single electron confined within a double quantum dot. A simple toy model incorporating both direct decay to the ground state of the double dot and indirect decay via an intermediate excited state yields an electron spin relaxation rate that varies non-monotonically with the detuning between the dots. We confirm this model with experiments performed on a GaAs double dot, demonstrating that the relaxation rate exhibits the expected detuning dependence and can be electrically tuned over several orders of magnitude. Our analysis suggests that spin-orbit mediated relaxation via phonons serves as the dominant mechanism through which the double-dot electron spin-flip rate varies with detuning.
We present transport measurements through an electrostatically defined bilayer graphene double quantum dot in the single electron regime. With the help of a back gate, two split gates and two finger gates we are able to control the number of charge carriers on two gate-defined quantum dot independently between zero and five. The high tunability of the device meets requirements to make such a device a suitable building block for spin-qubits. In the single electron regime, we determine interdot tunnel rates on the order of 2~GHz. Both, the interdot tunnel coupling, as well as the capacitive interdot coupling increase with dot occupation, leading to the transition to a single quantum dot. Finite bias magneto-spectroscopy measurements allow to resolve the excited state spectra of the first electrons in the double quantum dot; being in agreement with spin and valley conserving interdot tunneling processes.
We present real-time detection measurements of electron tunneling in a graphene quantum dot. By counting single electron charging events on the dot, the tunneling process in a graphene constriction and the role of localized states are studied in detail. In the regime of low charge detector bias we see only a single time-dependent process in the tunneling rate which can be modeled using a Fermi-broadened energy distribution of the carriers in the lead. We find a non-monotonic gate dependence of the tunneling coupling attributed to the formation of localized states in the constriction. Increasing the detector bias above 2 mV results in an increase of the dot-lead transition rate related to back-action of the charge detector current on the dot.
comments
Fetching comments Fetching comments
Sign in to be able to follow your search criteria
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا