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Register a new userEnhancement in thermoelectric properties of FeSb2 by Sb site deficiency
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We report a strategy based on introduction of point defects for improving the thermoelectric properties of FeSb2, a promising candidate for low temperature applications. Introduction of Sb deficiency to the tune of 20% leads to enhancement in the values of electrical conductivity ({sigma}) and Seebeck coefficient (S) accompanied with a concomitant suppression in lattice thermal conductivity (k{appa}lat) values in samples prepared using conventional solid state reaction route. These observations in polycrystalline FeSb2-x provides ample motivation for a dedicated exploration of thermoelectric behavior of the corresponding single crystalline as well as hot-pressed polycrystalline counterparts.
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We have investigated the effect of Sb-deficiency on the thermoelectric figure of merit (zT) of Zn4Sb3 prepared by solid state reaction route. At high temperatures, the Seebeck coefficient (S) and electrical conductivity ({sigma}) increase with increase in Sb deficiency whereas the thermal conductivity (k{appa}) decreases giving rise to an increase in the overall zT value. The observations suggest that creation of vacancies could be an effective route in improving the thermoelectric properties of Zn4Sb3 system. This coupled to nanostructuring strategy could lead to the ultimate maximum value of zT in this system for high temperature thermoelectric applications.
We study role of site substitutions at In and Te site in In2Te5 on the thermoelectric behavior. Single crystals with compositions In2(Te1-xSex)5 (x = 0, 0.05, 0.10) and Fe0.05In1.95(Te0.90Se0.10)5 were prepared using modified Bridgman-Stockbarger technique. Electrical and thermal transport properties of these single crystals were measured in the temperature range 6 - 395 K. A substantial decrease in thermal conductivity is observed in Fe substituted samples attributed to the enhanced phonon point-defect scattering. Marked enhancement in Seebeck coefficient S along with a concomitant suppression of electrical resistivity r{ho} is observed in Se substituted single crystals. An overall enhancement of thermoelectric figure of merit (zT) by a factor of 310 is observed in single crystals of Fe0.05In1.95(Te0.90Se0.10)5 compared to the parent In2Te5 single crystals.
By combining ab initio simulations including an on-site Coulomb repulsion term and Boltzmann theory, we explore the thermoelectric properties of (LaNiO$_3$)$_n$/(LaAlO$_3$)$_n$(001) superlattices ($n=1,3$) and identify a strong dependence on confinement, spacer thickness, and epitaxial strain. While the system with $n=3$ shows modest values of the Seebeck coefficient and power factor, the simultaneous reduction of the LaNiO$_3$ region and the LaAlO$_3$ spacer thickness to single layers results in a strong enhancement, in particular of the in-plane values. This effect can be further tuned by using epitaxial strain as control parameter: Under tensile strain corresponding to the lateral lattice constant of SrTiO$_3$ we predict in- and cross-plane Seebeck coefficients of $pm 600$ $mu$V/K and an in-plane power factor of $11$ $mu$W/K$^2$cm for an estimated relaxation time of $tau = 4$ fs around room temperature. These values are comparable to some of the best performing oxide systems such as La-doped SrTiO$_3$ or layered cobaltates and are associated with the opening of a small gap ($0.29$ eV) induced by the concomitant effect of octahedral tilting and Ni-site disproportionation. This establishes oxide superlattices at the verge of a metal-to-insulator transition driven by confinement and strain as promising candidates for thermoelectric materials.
Ge$_{2}$Sb$_{2}$Te$_{5}$ (GST) has been widely used as a popular phase change material. In this study, we show that it exhibits high Seebeck coefficients 200 - 300 $mu$V/K in its cubic crystalline phase ($it{c}$-GST) at remarkably high $it{p}$-type doping levels of $sim$ 1$times$10$^{19}$ - 6$times$10$^{19}$ cm$^{-3}$ at room temperature. More importantly, at low temperature (T = 200 K), the Seebeck coefficient was found to exceed 200 $mu$V/K for a doping range 1$times$10$^{19}$ - 3.5$times$10$^{19}$ cm$^{-3}$. Given that the lattice thermal conductivity in this phase has already been measured to be extremely low ($sim$ 0.7 W/m-K at 300 K),citep{r51} our results suggest the possibility of using $it{c}$-GST as a low-temperature thermoelectric material.
We report the growth of InAs$_{1-x}$Sb$_{x}$ nanowires ($0leq x leq 0.15$) grown by catalyst-free molecular beam epitaxy on silicon (111) substrates. We observed a sharp decrease of stacking fault density in the InAs$_{1-x}$Sb$_{x}$ nanowire crystal structure with increasing antimony content. This decrease leads to a significant increase in the field-effect mobility, this being more than three times greater at room temperature for InAs$_{0.85}$Sb$_{0.15}$ nanowires than InAs nanowires.
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