It has recently been proposed that the Fermi surface of underdoped high Tc copper oxide materials within the charge-ordered regime consists of a diamond-shaped electron pocket constructed from arcs connected at vertices. We show here that on modeling the in-plane magnetotransport of such a Fermi surface using the Shockley-Chambers tube integral approach and a uniform scattering time, several key features of the normal state in-plane transport of the underdoped copper oxide systems can be understood. These include the sign reversal in the Hall coefficient, the positive magnetoresistance and magnetic quantum oscillations in the Hall coefficient.