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Accurate and efficient linear scaling DFT calculations with universal applicability

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 Added by Stephan Mohr
 Publication date 2015
  fields Physics
and research's language is English




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Density Functional Theory calculations traditionally suffer from an inherent cubic scaling with respect to the size of the system, making big calculations extremely expensive. This cubic scaling can be avoided by the use of so-called linear scaling algorithms, which have been developed during the last few decades. In this way it becomes possible to perform ab-initio calculations for several tens of thousands of atoms or even more within a reasonable time frame. However, even though the use of linear scaling algorithms is physically well justified, their implementation often introduces some small errors. Consequently most implementations offering such a linear complexity either yield only a limited accuracy or, if one wants to go beyond this restriction, require a tedious fine tuning of many parameters. In our linear scaling approach within the BigDFT package, we were able to overcome this restriction. Using an ansatz based on localized support functions expressed in an underlying Daubechies wavelet basis -- which offers ideal properties for accurate linear scaling calculations -- we obtain an amazingly high accuracy and a universal applicability while still keeping the possibility of simulating large systems with only a moderate demand of computing resources.



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302 - D. R. Bowler , T. Miyazaki 2009
An overview of the Conquest linear scaling density functional theory (DFT) code is given, focussing particularly on the scaling behaviour on modern high- performance computing (HPC) platforms. We demonstrate that essentially perfect linear scaling and weak parallel scaling (with fixed atoms per processor core) can be achieved, and that DFT calculations on millions of atoms are now possible.
Density Functional Theory (DFT) has become the quasi-standard for ab-initio simulations for a wide range of applications. While the intrinsic cubic scaling of DFT was for a long time limiting the accessible system size to some hundred atoms, the recent progress with respect to linear scaling DFT methods has allowed to tackle problems that are larger by many orders of magnitudes. However, as these linear scaling methods were developed for insulators, they cannot, in general, be straightforwardly applied to metals, as a finite temperature is needed to ensure locality of the density matrix. In this paper we show that, once finite electronic temperature is employed, the linear scaling version of the BigDFT code is able to exploit this locality to provide a computational treatment that scales linearly with respect to the number of atoms of a metallic system. We provide prototype examples based on bulk Tungsten, which plays a key role in finding safe and long-lasting materials for Fusion Reactors. We believe that such an approach might help in opening the path towards novel approaches for investigating the electronic structure of such materials, in particular when large supercells are required.
Given the widespread use of density functional theory (DFT), there is an increasing need for the ability to model large systems (beyond 1,000 atoms). We present a brief overview of the large-scale DFT code Conquest, which is capable of modelling such large systems, and discuss approaches to the generation of consistent, well-converged pseudo-atomic basis sets which will allow such large scale calculations. We present tests of these basis sets for a variety of materials, comparing to fully converged plane wave results using the same pseudopotentials and grids.
The outstanding optoelectronics and photovoltaic properties of metal halide perovskites, including high carrier motilities, low carrier recombination rates, and the tunable spectral absorption range are attributed to the unique electronic properties of these materials. While DFT provides reliable structures and stabilities of perovskites, it performs poorly in electronic structure prediction. The relativistic GW approximation has been demonstrated to be able to capture electronic structure accurately, but at an extremely high computational cost. Here we report efficient and accurate band gap calculations of halide metal perovskites by using the approximate quasiparticle DFT-1/2 method. Using AMX3 (A = CH3NH3, CH2NHCH2, Cs; M = Pb, Sn, X=I, Br, Cl) as demonstration, the influence of the crystal structure (cubic, tetragonal or orthorhombic), variation of ions (different A, M and X) and relativistic effects on the electronic structure are systematically studied and compared with experimental results. Our results show that the DFT-1/2 method yields accurate band gaps with the precision of the GW method with no more computational cost than standard DFT. This opens the possibility of accurate electronic structure prediction of sophisticated halide perovskite structures and new materials design for lead-free materials.
Linear scaling methods for density-functional theory (DFT) simulations are formulated in terms of localised orbitals in real-space, rather than the delocalised eigenstates of conventional approaches. In local-orbital methods, relative to conventional DFT, desirable properties can be lost to some extent, such as the translational invariance of the total energy of a system with respect to small displacements and the smoothness of the potential energy surface. This has repercussions for calculating accurate ionic forces and geometries. In this work we present results from textsc{onetep}, our linear scaling method based on localised orbitals in real-space. The use of psinc functions for the underlying basis set and on-the-fly optimisation of the localised orbitals results in smooth potential energy surfaces that are consistent with ionic forces calculated using the Hellmann-Feynman theorem. This enables accurate geometry optimisation to be performed. Results for surface reconstructions in silicon are presented, along with three example systems demonstrating the performance of a quasi-Newton geometry optimisation algorithm: an organic zwitterion, a point defect in an ionic crystal, and a semiconductor nanostructure.
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